Inventor · disambiguated record
Chankyung Kim
Also filed as: KIM CHANKYUNG
21 granted patents·1 pending application·58 citations·filing 2013–2021
92Inventor score
Top patents by PatentIndex Score
22 records- 0194US10854612B2Semiconductor device including active region with variable atomic concentration of oxide semiconductor material and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 1, 2020·10 cites·18 claims
- 0289US9971697B2Nonvolatile memory module having DRAM used as cache, computing system having the same, and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 15, 2018·7 cites·17 claims
- 0388US10490281B2Memory device, memory package including the same, and memory module including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 26, 2019·7 cites·18 claims
- 0488US10019367B2Memory module, computing system having the same, and method for testing tag error thereofSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 10, 2018·7 cites·20 claims
- 0584US10497427B2Memory device using sense amplifiers as buffer memory with reduced access time and method of cache operation of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 3, 2019·8 cites·4 claims
- 0682US11112997B2Storage device and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 7, 2021·3 cites·16 claims
- 0778US9972371B2Memory device including memory cell for generating reference voltageSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 15, 2018·4 cites·20 claims
- 0874US10269394B2Memory package, memory module including the same, and operation method of memory packageSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 23, 2019·3 cites·21 claims
- 0971US9257166B2Current sense amplifying circuit in semiconductor memory deviceKIM CHANKYUNG·Filed 2014·Granted Feb 9, 2016·6 cites·19 claims
- 1068US11614866B2Nonvolatile memory device and operation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 28, 2023·0 cites·20 claims
- 1161US11862476B2Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor materialSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 2, 2024·0 cites·16 claims
- 1261US11106363B2Nonvolatile memory device and operation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 31, 2021·0 cites·20 claims
- 1359US9847105B2Memory package, memory module including the same, and operation method of memory packageSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 19, 2017·1 cites·17 claims
- 1456US10303372B2Nonvolatile memory device and operation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 28, 2019·0 cites·19 claims
- 1553US9076507B2Nonvolatile memory and method of operating nonvolatile memoryKIM CHANKYUNG·Filed 2013·Granted Jul 7, 2015·2 cites·25 claims
- 1646US10332571B2Memory device including memory cell for generating reference voltageSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 25, 2019·0 cites·20 claims
- 1741US11935592B2Resistive memory device for writing data and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 19, 2024·0 cites·19 claims
- 1841US10580462B2Memory device, memory system and electronic deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 3, 2020·0 cites·13 claims
- 1937US10535395B2Memory device with improved latency and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 14, 2020·0 cites·19 claims
- 2034US10891998B2Memory device operating based on a write current for a given operation condition and a method of driving the write currentSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 12, 2021·0 cites·16 claims
- 2130US2014140124A1Resistive memory device having selective sensing operation and access control method thereofKANG DONG-SEOK·Filed 2013·Application pending·0 cites
- 2229US9940046B2Semiconductor memory device with operation environment information storing circuit and command storing functionSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 10, 2018·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →