Inventor · disambiguated record
Chandrasekharan Kothandaraman
Also filed as: KOTHANDARAMAN CHANDRASEKHARAN
124 granted patents·17 pending applications·1,123 citations·filing 2000–2024
99Inventor score
Files withIBM105INFINEON TECHNOLOGIES AG10GLOBALFOUNDRIES INC4BREITWISCH MATTHEW J2KOTHANDARAMAN CHANDRASEKHARAN2
Top patents by PatentIndex Score
141 records- 0199US11980039B2Wide-base magnetic tunnel junction device with sidewall polymer spacerIBM·Filed 2021·Granted May 7, 2024·7 cites·20 claims
- 0298US7388273B2Reprogrammable fuse structure and methodIBM·Filed 2005·Granted Jun 17, 2008·73 cites·12 claims
- 0397US9647200B1Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric materialIBM·Filed 2015·Granted May 9, 2017·21 cites·12 claims
- 0496US9495627B1Magnetic tunnel junction based chip identificationIBM·Filed 2015·Granted Nov 15, 2016·14 cites·4 claims
- 0596US9397287B1Magnetic tunnel junction with post-deposition hydrogenationIBM·Filed 2015·Granted Jul 19, 2016·16 cites·20 claims
- 0696US7714326B2Electrical antifuse with integrated sensorIBM·Filed 2007·Granted May 11, 2010·47 cites·20 claims
- 0796US6624499B2System for programming fuse structure by electromigration of silicide enhanced by creating temperature gradientINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 23, 2003·158 cites·12 claims
- 0895US9025386B1Embedded charge trap multi-time-programmable-read-only-memory for high performance logic technologyIBM·Filed 2013·Granted May 5, 2015·27 cites·20 claims
- 0995US8299570B2Efuse containing sige stackKIM DEOK-KEE·Filed 2011·Granted Oct 30, 2012·21 cites·13 claims
- 1094US9208878B2Non-volatile memory based on retention modulationIBM·Filed 2014·Granted Dec 8, 2015·19 cites·20 claims
- 1194US7336095B2Changing chip function based on fuse statesIBM·Filed 2007·Granted Feb 26, 2008·31 cites·20 claims
- 1293US11778921B2Double magnetic tunnel junction deviceIBM·Filed 2020·Granted Oct 3, 2023·2 cites·20 claims
- 1393US9653679B1Magnetoresistive structures with stressed layerIBM·Filed 2016·Granted May 16, 2017·8 cites·18 claims
- 1492US7633079B2Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change materialIBM·Filed 2007·Granted Dec 15, 2009·26 cites·20 claims
- 1591US9601686B1Magnetoresistive structures with stressed layerIBM·Filed 2015·Granted Mar 21, 2017·7 cites·4 claims
- 1691US8030736B2Fin anti-fuse with reduced programming voltageIBM·Filed 2009·Granted Oct 4, 2011·20 cites·25 claims
- 1790US7982285B2Antifuse structure having an integrated heating elementIBM·Filed 2008·Granted Jul 19, 2011·14 cites·20 claims
- 1890US6368902B1Enhanced efuses by the local degradation of the fuse linkIBM·Filed 2000·Granted Apr 9, 2002·77 cites·16 claims
- 1989US9541605B1Magnetic tunnel junction loaded ring oscillators for MRAM characterizationIBM·Filed 2015·Granted Jan 10, 2017·3 cites·20 claims
- 2089US6617914B1Electrical antifuse with external capacitanceINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 9, 2003·50 cites·18 claims
- 2188US10957738B2Magnetic random access memory (MRAM) structure with small bottom electrodeIBM·Filed 2019·Granted Mar 23, 2021·4 cites·9 claims
- 2288US10008536B2Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric materialIBM·Filed 2017·Granted Jun 26, 2018·6 cites·14 claims
- 2388US9436845B2Physically unclonable fuse using a NOR type memory arrayGLOBALFOUNDRIES US 2 LLC·Filed 2014·Granted Sep 6, 2016·11 cites·7 claims
- 2487US8159040B2Metal gate integration structure and method including metal fuse, anti-fuse and/or resistorCOOLBAUGH DOUGLAS D·Filed 2008·Granted Apr 17, 2012·15 cites·21 claims
- 2586US10002904B2Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric materialIBM·Filed 2017·Granted Jun 19, 2018·5 cites·20 claims
- 2686US7750335B2Phase change material structure and related methodIBM·Filed 2007·Granted Jul 6, 2010·16 cites·11 claims
- 2786US7550789B2Using electrically programmable fuses to hide architecture, prevent reverse engineering, and make a device inoperableIBM·Filed 2008·Granted Jun 23, 2009·13 cites·15 claims
- 2886US7504875B2Methods and apparatus for characterizing electronic fuses used to personalize an integrated circuitIBM·Filed 2007·Granted Mar 17, 2009·10 cites·20 claims
- 2986US7295057B2Methods and apparatus for characterizing electronic fuses used to personalize an integrated circuitIBM·Filed 2005·Granted Nov 13, 2007·11 cites·18 claims
- 3086US6432760B1Method and structure to reduce the damage associated with programming electrical fusesINFINEON TECHNOLOGIES AG·Filed 2000·Granted Aug 13, 2002·44 cites·8 claims
- 3184US11226252B2Multilayered magnetic free layer structure in magnetic tunnel junction arrays for sub-micrometer resolution pressure sensorsIBM·Filed 2019·Granted Jan 18, 2022·2 cites·20 claims
- 3284US10078496B2Magnetic tunnel junction (MTJ) based true random number generators (TRNG)IBM·Filed 2017·Granted Sep 18, 2018·4 cites·20 claims
- 3384US8004059B2eFuse containing SiGe stackIBM·Filed 2007·Granted Aug 23, 2011·10 cites·17 claims
- 3483US10741752B2Sub-lithographic magnetic tunnel junctions for magnetic random access memory devicesIBM·Filed 2020·Granted Aug 11, 2020·1 cites·20 claims
- 3583US7960809B2eFuse with partial SiGe layer and design structure thereforIBM·Filed 2009·Granted Jun 14, 2011·10 cites·20 claims
- 3683US7960808B2Reprogrammable fuse structure and methodIBM·Filed 2007·Granted Jun 14, 2011·8 cites·21 claims
- 3783US7880266B2Four-terminal antifuse structure having integrated heating elements for a programmable circuitIBM·Filed 2007·Granted Feb 1, 2011·8 cites·32 claims
- 3883US7227207B2Dense semiconductor fuse arrayIBM·Filed 2005·Granted Jun 5, 2007·11 cites·9 claims
- 3982US10937828B2Fabricating embedded magnetoresistive random access memory device with v-shaped magnetic tunnel junction profileIBM·Filed 2018·Granted Mar 2, 2021·2 cites·6 claims
- 4082US6913954B2Programmable fuse deviceINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jul 5, 2005·28 cites·18 claims
- 4181US7732893B2Electrical fuse structure for higher post-programming resistanceIBM·Filed 2007·Granted Jun 8, 2010·10 cites·20 claims
- 4281US6710640B1Active well-bias transistor for programming a fuseINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 23, 2004·30 cites·20 claims
- 4380US10840441B2Diamond-like carbon hardmask for MRAMIBM·Filed 2018·Granted Nov 17, 2020·2 cites·11 claims
- 4480US9721646B1Prevention of SRAM burn-inIBM·Filed 2016·Granted Aug 1, 2017·3 cites·16 claims
- 4580US8950008B2Undiscoverable physical chip identificationFAINSTEIN DANIEL JACOB·Filed 2012·Granted Feb 3, 2015·8 cites·10 claims
- 4680US8350264B2Secure anti-fuse with low voltage programming through localized diffusion heatingINTERNAT BUSINESSS MACHINES CORP·Filed 2010·Granted Jan 8, 2013·5 cites·20 claims
- 4779US7442583B2Using electrically programmable fuses to hide architecture, prevent reverse engineering, and make a device inoperableIBM·Filed 2004·Granted Oct 28, 2008·21 cites·17 claims
- 4879US7268577B2Changing chip function based on fuse statesIBM·Filed 2004·Granted Sep 11, 2007·21 cites·11 claims
- 4978US10727398B1MTJ containing device containing a bottom electrode embedded in diamond-like carbonIBM·Filed 2019·Granted Jul 28, 2020·1 cites·10 claims
- 5078US7943493B2Electrical fuse having a fully silicided fuselink and enhanced flux divergenceIBM·Filed 2010·Granted May 17, 2011·4 cites·9 claims
Showing the top 50 of 141 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →