Inventor · disambiguated record

Changseung Lee

Also filed as: LEE CHANGSEUNG

31 granted patents·23 pending applications·39 citations·filing 2015–2025

94Inventor score

Technology areasH10N H10B G02B G11C C23C

Files withSAMSUNG ELECTRONICS CO LTD54

Top patents by PatentIndex Score

54 records

0192US12101942B2Semiconductor device including chalcogen compound and semiconductor apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 24, 2024·1 cites·3 claims
0292US11818899B2Semiconductor device including layers with different chalcogen compounds and semiconductor apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·15 claims
0389US9970906B2Apparatus for analyzing active material of secondary battery and method of analyzing active material using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 15, 2018·6 cites·13 claims
0489US9658186B2Device including vertically aligned two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 23, 2017·14 cites·10 claims
0583US10976472B2Meta-optical device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 13, 2021·4 cites·17 claims
0681US11133179B2Thin-film structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 28, 2021·3 cites·20 claims
0780US2025113746A1Semiconductor apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
0880US2025374556A1Switching device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
0979US12063793B2Chalcogen compound and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 13, 2024·1 cites·46 claims
1078US12268105B2Semiconductor apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·16 claims
1178US11194153B2Phase shift device including metal-dielectric composite structureSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 7, 2021·2 cites·30 claims
1278US2024414926A1Semiconductor device including chalcogen compound and semiconductor apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
1377US10392518B2Paste material, wiring member formed from the paste material, and electronic device including the wiring memberSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 27, 2019·3 cites·31 claims
1477US2024012178A1Meta-surface optical element and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
1575US11898244B2Plasma-enhanced chemical vapor deposition method of forming lithium-based film by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 13, 2024·0 cites·10 claims
1673US10438715B2Nanostructure, method of preparing the same, and panel units comprising the nanostructureSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 8, 2019·1 cites·42 claims
1772US11808918B2Meta-surface optical element and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·18 claims
1870US11677036B2Meta optical devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 13, 2023·0 cites·13 claims
1969US11744167B2Semiconductor apparatus including a phase change material layer having a first and a second chalcogen layerSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
2069US11137661B2Multilayer thin-film structure and phase shifting device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 5, 2021·0 cites·30 claims
2168US11693237B2Phase shift device including metal-dielectric composite structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 4, 2023·0 cites·25 claims
2267US10670891B2Nonreciprocal optical transmission device and optical apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 2, 2020·1 cites·23 claims
2366US11947238B2Multilayer thin-film structure and phase shifting device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 2, 2024·0 cites·22 claims
2466US11329174B2Meta optical devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 10, 2022·0 cites·22 claims
2566US10665637B2Complementary metal oxide semiconductor image sensor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 26, 2020·1 cites·27 claims
2665US12471292B2Phase-change memory structure and phase-change memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
2765US2025380427A13d memory device using self-selecting memory and operation method of the 3d memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
2862US12254922B2Memory device including switching material and phase change materialSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·18 claims
2962US2025149084A1Memory device for implementing multi-level memory and method of implementing multi-level memory by using the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
3062US2018010245A1Plasma-enhanced chemical vapor deposition apparatus and method of forming lithium-based film by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
3161US12414309B2Memory device including phase-change materialSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 9, 2025·0 cites·26 claims
3261US11262606B2Nonreciprocal optical transmission device and optical apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 1, 2022·0 cites·19 claims
3361US2025203883A1Vertical non-volatile memory device including memory cell stringSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
3460US12426275B2Switching device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 23, 2025·0 cites·29 claims
3560US2024324246A1Self-selecting memory device having polarity dependent threshold voltage shift characteristics and memory apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
3660US2025176193A1Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
3757US2019086579A1Meta-surface optical element and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
3857US2022406842A1Chalcogenide material, device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
3956US2025365983A1Self-selecting memory material, memory device, and electronic device including the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
4056US2024057347A1Metal chalcogenide film, memory element including same, and method for manufacturing phase-change heterolayerSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
4155US2025089270A1Memory device, manufacturing method thereof, and electronic apparatus including memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
4255US2025194438A1Information reading method of self-selecting memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
4354US9595401B1Method of fabricating graphene nano-meshSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 14, 2017·0 cites·18 claims
4454US2025133970A1Chalcogenide-based memory device for implementing multi-level memory and electronic apparatus including the chalcogenide-based memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
4554US2025194443A1Memory device and method of implementing multi-level memory using the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
4654US2025107461A1Variable resistance material and variable resistance memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
4753US12140734B2Optical thin film for meta-surface and meta-optical device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 12, 2024·0 cites·14 claims
4853US11158838B2Flexible organic-inorganic passivation layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 26, 2021·0 cites·13 claims
4951US2025380428A1Self-selecting memory material, device, and electronic device including the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
5049US2024065118A1Phase change heterostructure, and phase change memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites

Showing the top 50 of 54 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →