Inventor · disambiguated record
Changseok Lee
Also filed as: LEE CHANGSEOK
49 granted patents·24 pending applications·294 citations·filing 1991–2025
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD68KOREA ELECTRONICS TELECOMM2INCOME KOREA CO LTD1INSPRIT CO LTD1LEE CHANGSEOK1
Top patents by PatentIndex Score
73 records- 0197US11682622B2Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 20, 2023·5 cites·14 claims
- 0294US7561899B2Method and apparatus for controlling and applying resource of idle screen on mobileINSPRIT CO LTD·Filed 2004·Granted Jul 14, 2009·228 cites·33 claims
- 0391US10539868B2Pellicle for photomask, reticle including the same, and exposure apparatus for lithographySAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 21, 2020·3 cites·34 claims
- 0490US12080649B2Semiconductor memory device and apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 3, 2024·1 cites·18 claims
- 0589US12131905B2Graphene structure and method of forming the graphene structureSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 29, 2024·2 cites·26 claims
- 0688US11217531B2Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 4, 2022·2 cites·19 claims
- 0787US12061312B2Amorphous boron nitride film and anti-reflection coating structure including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 13, 2024·1 cites·28 claims
- 0886US10134628B2Multilayer structure including diffusion barrier layer and device including the multilayer structureSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 20, 2018·4 cites·28 claims
- 0985US11626502B2Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 11, 2023·1 cites·24 claims
- 1084US10928723B2Pellicle for photomask, reticle including the same, and exposure apparatus for lithographySAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 23, 2021·2 cites·34 claims
- 1183US11624127B2Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 11, 2023·1 cites·20 claims
- 1283US10757554B2Method and apparatus for managing device using at least one sensorSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 25, 2020·3 cites·14 claims
- 1383US9761532B2Hybrid interconnect structure and electronic device employing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 12, 2017·4 cites·20 claims
- 1482US11626282B2Graphene structure and method of forming graphene structureSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 11, 2023·2 cites·18 claims
- 1581US11069619B2Interconnect structure and electronic device employing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 20, 2021·3 cites·11 claims
- 1680US11404182B2Conductive composite structure for electronic device, method of preparing the same, electrode for electronic device including the conductive composite structure, and electronic device including the conductive composite structureSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 2, 2022·2 cites·13 claims
- 1780US2025351425A1Vertical channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1879US12139814B2Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
- 1979US11180373B2Nanocrystalline graphene and method of forming nanocrystalline grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 23, 2021·2 cites·16 claims
- 2078US10971451B2Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 6, 2021·2 cites·22 claims
- 2178US2025066950A1Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2275US2025201307A1Vertical nonvolatile memory device including memory cell stringSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2374US9997604B2Electrode connecting structure including adhesion layer and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 12, 2018·2 cites·20 claims
- 2473US9664401B2Method and apparatus for controlling air conditioner, and air conditionerSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 30, 2017·2 cites·16 claims
- 2572US12183679B2Interconnect structure and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·17 claims
- 2672US11094538B2Method of forming grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 17, 2021·1 cites·24 claims
- 2772US8131276B2Method for extracting content, content extraction server based on RSS and apparatus for managing the same and system for providing standby screen of mobile communication terminal using the sameLEE CHANGSEOK·Filed 2006·Granted Mar 6, 2012·8 cites·32 claims
- 2871US12272402B2Vertical nonvolatile memory device including memory cell stringSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·24 claims
- 2971US2025203846A1Vertical-channel cell array transistor structure and dram device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3070US12262527B2Vertical-channel cell array transistor structure and dram device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 25, 2025·0 cites·27 claims
- 3170US2025126864A1Black phosphorus-two dimensional material complex and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3269US12506074B2Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 3369US12389630B2Vertical channel transistor including a graphene insertion layer beweeen a source/drain electrode and a channel patternSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·19 claims
- 3469US2023207312A1Graphene structure and method of forming graphene structureSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3567US10154427B2Method and apparatus for managing device using at least one sensorSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 11, 2018·1 cites·12 claims
- 3665US11713248B2Method of growing graphene selectivelySAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 1, 2023·0 cites·23 claims
- 3764US12378120B2Wiring including graphene layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 5, 2025·0 cites·20 claims
- 3864US11424186B2Semiconductor memory device and apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 23, 2022·0 cites·18 claims
- 3963US11462477B2Interconnect structure and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 4, 2022·0 cites·21 claims
- 4062US11978704B2Wiring structure and electronic device employing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 7, 2024·0 cites·30 claims
- 4161US12369359B2Thin film structure and electronic device including two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
- 4261US2025176301A1Semiconductor device including vertically stacked semiconductor elements, method of manufacturing the same, and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4360US12211744B2Method of forming nanocrystalline grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 28, 2025·0 cites·20 claims
- 4459US12421598B2Nanocrystalline graphene and method of forming nanocrystalline grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·25 claims
- 4559US12211904B2Black phosphorus-two dimensional material complex and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 28, 2025·0 cites·11 claims
- 4659US11149346B2Method of directly growing carbon material on substrateSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 19, 2021·0 cites·23 claims
- 4759US2024297221A1Transistor structure including as-grown graphene and semiconductor device including the transistor structureSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4858US11572278B2Method of forming grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 7, 2023·0 cites·19 claims
- 4958US2022270853A1Apparatus for depositing two-dimensional materialsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 5056US12183582B2Film deposition method and element including film deposited by the film deposition methodSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 31, 2024·0 cites·17 claims
Showing the top 50 of 73 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →