US2023207312A1PendingUtilityA1
Graphene structure and method of forming graphene structure
Est. expiryApr 30, 2039(~12.8 yrs left)· nominal 20-yr term from priority
Inventors:Eunkyu LeeKyung-Eun ByunHyunjae SongHyeonjin ShinChanghyun KimKeunwook ShinChangseok LeeAlum Jung
H10P 14/3406H10P 14/3246H10P 14/2905H10P 14/36H10P 14/24H10P 14/3208H10P 14/2925H10D 48/01H10D 62/882H10D 62/8325H10D 62/822H01L 29/165H01L 29/1606H01L 21/02499H01L 21/02658H01L 29/1608H01L 21/02381H01L 21/02447H01L 21/0262H01L 21/02527H10P 95/90H10P 50/242H10P 50/642H10P 14/6336H10P 14/6319H10P 14/6903H10P 14/6902
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Abstract
Provided are a graphene structure and a method of forming the graphene structure. The graphene structure includes a substrate and graphene on a surface of the substrate. Here, a bonding region in which a material of the substrate and carbon of the graphene are covalently bonded is formed between the surface of the substrate and the graphene.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A graphene structure comprising:
a substrate; graphene on a surface of the substrate; and a bonding region, where a material of the substrate and carbon of the graphene are covalently bonded, between the surface of the substrate and the graphene, wherein the bonding region has a SiC content in a range of 40% to 60%.
2 . The graphene structure of claim 1 , wherein
the bonding region covers a part or all of the surface of the substrate.
3 . The graphene structure of claim 1 , wherein
the substrate includes silicon (Si), and the bonding region includes a silicon-carbon (Si—C) bond.
4 . The graphene structure of claim 1 , wherein
the graphene has a thickness of 1 nm to 2 nm.
5 . The graphene structure of claim 1 , wherein
the surface of the substrate has nano-sized roughness.Cited by (0)
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