Inventor · disambiguated record

Kyung-Eun Byun

Also filed as: BYUN KYUNG-EUN

55 granted patents·43 pending applications·85 citations·filing 2013–2025

97Inventor score

Technology areasH10P H10D H10W C01B H02N

Files withSAMSUNG ELECTRONICS CO LTD98

Top patents by PatentIndex Score

98 records

0197US11682622B2Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 20, 2023·5 cites·14 claims
0294US10587207B2Triboelectric generator using surface plasmon resonanceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 10, 2020·5 cites·20 claims
0394US10014799B2Triboelectric generatorSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 3, 2018·5 cites·8 claims
0492US11708633B2Metal chalcogenide film and method and device for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 25, 2023·3 cites·5 claims
0592US9105556B2Tunneling field-effect transistor including graphene channelSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 11, 2015·11 cites·22 claims
0690US12080649B2Semiconductor memory device and apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 3, 2024·1 cites·18 claims
0790US9053932B2Methods of preparing graphene and device including grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 9, 2015·10 cites·16 claims
0889US9306005B2Electronic device including grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Apr 5, 2016·10 cites·24 claims
0988US11217531B2Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 4, 2022·2 cites·19 claims
1088US9040957B2Field effect transistor using grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 26, 2015·8 cites·16 claims
1185US11626502B2Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 11, 2023·1 cites·24 claims
1284US10850985B2Method of forming nanocrystalline graphene, and device including nanocrystalline grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 1, 2020·3 cites·18 claims
1382US11626282B2Graphene structure and method of forming graphene structureSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 11, 2023·2 cites·18 claims
1481US11069619B2Interconnect structure and electronic device employing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 20, 2021·3 cites·11 claims
1580US12359911B2Method of calculating thickness of graphene layer and method of measuring content of silicon carbide by using XPSSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·12 claims
1680US11545358B2Method of forming transition metal dichalcogenide thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 3, 2023·1 cites·15 claims
1780US2025351425A1Vertical channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
1878US10971451B2Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 6, 2021·2 cites·22 claims
1977US9166062B2Field effect transistor using grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 20, 2015·2 cites·4 claims
2076US2025089320A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
2175US12297532B2Metal chalcogenide film and method and device for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted May 13, 2025·0 cites·7 claims
2275US9752941B2Pressure sensor and pressure sensing methodSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 5, 2017·5 cites·19 claims
2375US2024395613A1Method of forming interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
2473US2025280590A1Electronic device including two-dimensional material and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
2572US11094538B2Method of forming grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 17, 2021·1 cites·24 claims
2671US11881399B2Method of forming transition metal dichalcogenide thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 23, 2024·0 cites·19 claims
2771US11869768B2Method of forming transition metal dichalcogenide thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 9, 2024·0 cites·17 claims
2871US2025203846A1Vertical-channel cell array transistor structure and dram device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
2970US12262527B2Vertical-channel cell array transistor structure and dram device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 25, 2025·0 cites·27 claims
3069US12506074B2Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
3169US12389630B2Vertical channel transistor including a graphene insertion layer beweeen a source/drain electrode and a channel patternSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·19 claims
3269US12080595B2Method of forming interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·25 claims
3369US9306021B2Graphene devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 5, 2016·2 cites·27 claims
3469US2023207312A1Graphene structure and method of forming graphene structureSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
3567US12336259B2Electronic device including two-dimensional material and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 17, 2025·0 cites·25 claims
3667US12183780B2Metal-to-semiconductor contact including a 2D crystal material layerSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 31, 2024·0 cites·17 claims
3767US9048310B2Graphene switching device having tunable barrierSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 2, 2015·2 cites·20 claims
3865US11713248B2Method of growing graphene selectivelySAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 1, 2023·0 cites·23 claims
3964US12378120B2Wiring including graphene layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 5, 2025·0 cites·20 claims
4064US11424186B2Semiconductor memory device and apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 23, 2022·0 cites·18 claims
4164US2025126885A1Semiconductor device, array structure including the semiconductor device, and method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
4263US2025120130A1Semiconductor device including two-dimensional material and method of fabricating the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
4362US12183783B2Stacked structure including two-dimensional material and method of fabricating the stacked structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·21 claims
4462US11906291B2Method of calculating thickness of graphene layer and method of measuring content of silicon carbide by using XPSSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 20, 2024·0 cites·8 claims
4562US2025142907A1Semiconductor device including vertical channel having tube shapeSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
4661US12369359B2Thin film structure and electronic device including two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
4761US12341063B2Interconnect structure, electronic device including the same, and method of manufacturing interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 24, 2025·0 cites·32 claims
4861US12046656B2Semiconductor device including surface-treated semiconductor layerSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·19 claims
4961US2025176258A1Semiconductor device including two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
5061US2025176301A1Semiconductor device including vertically stacked semiconductor elements, method of manufacturing the same, and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites

Showing the top 50 of 98 patent records by PatentIndex Score.

Join the waitlist — get patent alerts

Get an alert when Kyung-Eun Byun files or is granted a new patent.

We store only your email — no account needed. See our privacy policy.

Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →