Inventor · disambiguated record

Keunwook Shin

Also filed as: SHIN KEUNWOOK

44 granted patents·27 pending applications·45 citations·filing 2015–2025

96Inventor score

Technology areasH10P H10W H10D C01B C23C

Files withSAMSUNG ELECTRONICS CO LTD71

Top patents by PatentIndex Score

71 records

0197US11682622B2Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 20, 2023·5 cites·14 claims
0293US11887850B2Method of forming carbon layer and method of forming interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 30, 2024·2 cites·25 claims
0392US11508664B2Interconnect structure including graphene-metal barrier and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 22, 2022·3 cites·28 claims
0491US10539868B2Pellicle for photomask, reticle including the same, and exposure apparatus for lithographySAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 21, 2020·3 cites·34 claims
0589US12131905B2Graphene structure and method of forming the graphene structureSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 29, 2024·2 cites·26 claims
0688US11217531B2Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 4, 2022·2 cites·19 claims
0786US10134628B2Multilayer structure including diffusion barrier layer and device including the multilayer structureSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 20, 2018·4 cites·28 claims
0885US11626502B2Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 11, 2023·1 cites·24 claims
0984US10937885B2Electronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 2, 2021·2 cites·25 claims
1084US10928723B2Pellicle for photomask, reticle including the same, and exposure apparatus for lithographySAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 23, 2021·2 cites·34 claims
1184US10850985B2Method of forming nanocrystalline graphene, and device including nanocrystalline grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 1, 2020·3 cites·18 claims
1283US9761532B2Hybrid interconnect structure and electronic device employing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 12, 2017·4 cites·20 claims
1382US11626282B2Graphene structure and method of forming graphene structureSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 11, 2023·2 cites·18 claims
1481US11069619B2Interconnect structure and electronic device employing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 20, 2021·3 cites·11 claims
1580US11908918B2Electronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·8 claims
1680US2025351425A1Vertical channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
1779US11180373B2Nanocrystalline graphene and method of forming nanocrystalline grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 23, 2021·2 cites·16 claims
1878US10971451B2Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 6, 2021·2 cites·22 claims
1978US9905422B2Two-dimensional material hard mask, method of manufacturing the same, and method of forming material layer pattern using the hard maskSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 27, 2018·2 cites·8 claims
2076US2025107208A1Semiconductor device and electronic apparatus including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
2176US2025089320A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
2275US2024395613A1Method of forming interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
2373US11538918B2Electronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 27, 2022·0 cites·19 claims
2472US11094538B2Method of forming grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 17, 2021·1 cites·24 claims
2571US12014991B2Interconnect structure including graphene-metal barrier and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
2669US12506074B2Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
2769US12389630B2Vertical channel transistor including a graphene insertion layer beweeen a source/drain electrode and a channel patternSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·19 claims
2869US12080595B2Method of forming interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·25 claims
2969US2023207312A1Graphene structure and method of forming graphene structureSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
3067US12199165B2Semiconductor device and electronic apparatus including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·24 claims
3167US12183780B2Metal-to-semiconductor contact including a 2D crystal material layerSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 31, 2024·0 cites·17 claims
3265US11713248B2Method of growing graphene selectivelySAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 1, 2023·0 cites·23 claims
3364US12378120B2Wiring including graphene layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 5, 2025·0 cites·20 claims
3462US12183783B2Stacked structure including two-dimensional material and method of fabricating the stacked structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·21 claims
3562US11978704B2Wiring structure and electronic device employing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 7, 2024·0 cites·30 claims
3661US12369359B2Thin film structure and electronic device including two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
3761US12341063B2Interconnect structure, electronic device including the same, and method of manufacturing interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 24, 2025·0 cites·32 claims
3860US12211744B2Method of forming nanocrystalline grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 28, 2025·0 cites·20 claims
3960US2024178144A1Interconnect structure and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
4059US12421598B2Nanocrystalline graphene and method of forming nanocrystalline grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·25 claims
4159US11149346B2Method of directly growing carbon material on substrateSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 19, 2021·0 cites·23 claims
4258US11572278B2Method of forming grapheneSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 7, 2023·0 cites·19 claims
4358US2025159946A1Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
4458US2022270853A1Apparatus for depositing two-dimensional materialsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
4557US12400975B2Interconnect structure and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 26, 2025·0 cites·22 claims
4656US12183582B2Film deposition method and element including film deposited by the film deposition methodSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 31, 2024·0 cites·17 claims
4756US12087840B2Semiconductor device and capacitor including hydrogen-incorporated oxide layerSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 10, 2024·0 cites·16 claims
4856US2024014287A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
4956US2024021679A1Semiconductor device including two-dimensional material and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
5056US2024178294A1Semiconductor device including inclined channel layer and electronic device including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites

Showing the top 50 of 71 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →