Inventor · disambiguated record
Chun Te Li
Also filed as: LI CHUN-TE
9 granted patents·2 pending applications·11 citations·filing 2008–2024
81Inventor score
Top patents by PatentIndex Score
11 records- 0189US10340384B2Method of manufacturing fin field-effect transistor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 2, 2019·4 cites·20 claims
- 0288US10497577B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 3, 2019·4 cites·20 claims
- 0383US2024371769A1Semiconductor device having an extra low-k dielectric layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0482US10797175B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 6, 2020·2 cites·20 claims
- 0579US12062613B2Semiconductor device having an extra low-k dielectric layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
- 0675US10964548B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·1 cites·20 claims
- 0771US11735430B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 0869US11450772B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·0 cites·20 claims
- 0948US10847634B2Field effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 24, 2020·0 cites·20 claims
- 1044US10504898B2Fin field-effect transistor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 10, 2019·0 cites·20 claims
- 1144US2009127648A1Hybrid Gap-fill Approach for STI FormationCHEN NENG-KUO·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →