Inventor · disambiguated record
Chun-Chieh Lin
Also filed as: LIN CHUN-CHIEH
114 granted patents·29 pending applications·1,221 citations·filing 2000–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD47TAIWAN SEMICONDUCTOR MFG42NOVATEK MICROELECTRONICS CORP9TAIWAN ASIA SEMICONDUCTOR CORP7APPLE INC4
Top patents by PatentIndex Score
143 records- 0198US9520362B2Semiconductor device having interconnect layer that includes dielectric segments interleaved with metal componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 13, 2016·38 cites·20 claims
- 0298US7112495B2Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuitTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 26, 2006·270 cites·71 claims
- 0397US6703271B2Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Mar 9, 2004·125 cites·12 claims
- 0496US12154515B2Displays with reduced temperature luminance sensitivityAPPLE INC·Filed 2022·Granted Nov 26, 2024·3 cites·15 claims
- 0596US9269612B2Mechanisms of forming damascene interconnect structuresCHEN CHIEN-AN·Filed 2012·Granted Feb 23, 2016·32 cites·20 claims
- 0696US6921913B2Strained-channel transistor structure with lattice-mismatched zoneTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 26, 2005·104 cites·32 claims
- 0794US11676898B2Diffusion barrier for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 13, 2023·4 cites·16 claims
- 0894US10312098B2Method of forming an interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 4, 2019·6 cites·20 claims
- 0994US7238989B2Strain balanced structure with a tensile strained silicon channel and a compressive strained silicon-germanium channel for CMOS performance enhancementTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 3, 2007·31 cites·19 claims
- 1093US7226832B2Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layerTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 5, 2007·16 cites·9 claims
- 1191US11532282B2Displays with reduced temperature luminance sensitivityAPPLE INC·Filed 2021·Granted Dec 20, 2022·2 cites·21 claims
- 1291US10388207B2External compensation method and driver IC using the sameNOVATEK MICROELECTRONICS CORP·Filed 2016·Granted Aug 20, 2019·6 cites·9 claims
- 1391US7646068B2Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuitTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 12, 2010·15 cites·20 claims
- 1491US7078742B2Strained-channel semiconductor structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 18, 2006·51 cites·48 claims
- 1591US6875655B2Method of forming DRAM capacitors with protected outside crown surface for more robust structuresTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 5, 2005·63 cites·20 claims
- 1690US7357838B2Relaxed silicon germanium substrate with low defect densityTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 15, 2008·13 cites·24 claims
- 1788US10269555B2Post-CMP cleaning and apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 23, 2019·4 cites·20 claims
- 1888US7112483B2Method for forming a device having multiple silicide typesTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 26, 2006·40 cites·22 claims
- 1987US7293340B1Direct drive spindle, machining center and methods of fabricating the sameROUNDTOP MACHINERY IND CO LTD·Filed 2007·Granted Nov 13, 2007·27 cites·20 claims
- 2086US11772228B2Chemical mechanical polishing apparatus including a multi-zone platenTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 3, 2023·2 cites·20 claims
- 2186US11679469B2Chemical mechanical planarization toolTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 20, 2023·2 cites·18 claims
- 2286US7989901B2MOS devices with improved source/drain regions with SiGeTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 2, 2011·15 cites·8 claims
- 2385US10572475B2Leveraging columnar encoding for query operationsORACLE INT CORP·Filed 2017·Granted Feb 25, 2020·6 cites·40 claims
- 2485US10163644B2Interconnect structure including a conductive feature and a barrier layer on sidewalls and a bottom surface of the conductive feature and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 25, 2018·4 cites·20 claims
- 2584US11049457B1Mirrored pixel arrangement to mitigate column crosstalkAPPLE INC·Filed 2020·Granted Jun 29, 2021·2 cites·20 claims
- 2684US9962805B2Chemical mechanical polishing apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 8, 2018·2 cites·20 claims
- 2784US6955952B2Strain balanced structure with a tensile strained silicon channel and a compressive strained silicon-germanium channel for CMOS performance enhancementTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Oct 18, 2005·29 cites·36 claims
- 2883US12172263B2Chemical mechanical planarization toolTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 2983US12170195B2Post-CMP cleaning and apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 3083US9029260B2Gap filling method for dual damascene processLIN CHUN CHIEH·Filed 2011·Granted May 12, 2015·6 cites·20 claims
- 3183US7459756B2Method for forming a device having multiple silicide typesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Dec 2, 2008·8 cites·31 claims
- 3283US7423347B2In-situ deposition for cu hillock suppressionTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Sep 9, 2008·7 cites·14 claims
- 3382US11908697B2Interconnect structure having a carbon-containing barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 3482US10867800B2Method of forming an interconnect structure having a carbon-containing barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 15, 2020·1 cites·20 claims
- 3582US10726010B2Optimization technique of generalized disjunctive semi/anti joinAHMED RAFI·Filed 2012·Granted Jul 28, 2020·7 cites·18 claims
- 3682US7172933B2Recessed polysilicon gate structure for a strained silicon MOSFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 6, 2007·34 cites·14 claims
- 3781US9846252B2Proximity sensor and mobile communication device thereofASUSTEK COMP INC·Filed 2016·Granted Dec 19, 2017·3 cites·20 claims
- 3880US9659856B2Two step metallization formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 23, 2017·4 cites·20 claims
- 3980US7592619B2Epitaxy layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Sep 22, 2009·14 cites·10 claims
- 4080US7183593B2Heterostructure resistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Feb 27, 2007·26 cites·36 claims
- 4180US6963114B2SOI MOSFET with multi-sided source/drain silicideTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Nov 8, 2005·25 cites·58 claims
- 4279US10109523B2Method of cleaning wafer after CMPTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 23, 2018·2 cites·20 claims
- 4379US7354830B2Methods of forming semiconductor devices with high-k gate dielectricTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Apr 8, 2008·7 cites·28 claims
- 4479US6953972B2Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layerTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Oct 11, 2005·16 cites·5 claims
- 4578US12315809B2Via for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 4678US11728157B2Post-CMP cleaning and apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 4778US6812116B2Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performanceTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 2, 2004·22 cites·9 claims
- 4877US10482820B2Method of compensating luminance of OLED and display system using the sameNOVATEK MICROELECTRONICS CORP·Filed 2016·Granted Nov 19, 2019·2 cites·6 claims
- 4977US2025279364A1Via for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5076US12002684B2Methods for chemical mechanical polishing and forming interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
Showing the top 50 of 143 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →