Inventor · disambiguated record
Chun-Neng Lin
Also filed as: LIN CHUN-NENG
44 granted patents·15 pending applications·7 citations·filing 2018–2025
96Inventor score
Top patents by PatentIndex Score
59 records- 0188US11488857B2Semiconductor device and method of manufacture using a contact etch stop layer (CESL) breakthrough processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·2 cites·20 claims
- 0286US2025364420A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0385US12278288B2Fin field-effect transistor device having hybrid work function layer stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 15, 2025·0 cites·20 claims
- 0485US2025318176A1Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0584US12376372B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 0684US12369348B2Fin Field-Effect Transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 0783US11276571B2Method of breaking through etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 15, 2022·1 cites·20 claims
- 0883US2024371688A1Semiconductor device with doped region dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0982US2025336719A1Semiconductor device with doped region dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1081US12381081B2Method of breaking through etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 1181US12080556B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·16 claims
- 1281US12021145B2Fin field-effect transistor device having hybrid work function layer stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
- 1381US2025301765A1Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1480US12317525B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 1580US2025253161A1Semiconductor Device and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1679US11201084B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 14, 2021·2 cites·20 claims
- 1778US12136566B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 5, 2024·0 cites·20 claims
- 1878US12051619B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 1978US11901441B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 13, 2024·0 cites·20 claims
- 2077US12308248B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 2177US11522083B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 6, 2022·1 cites·20 claims
- 2276US12469789B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 2376US12051753B2Fin field-effect transistor device having hybrid work function layer stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 2476US11978801B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·0 cites·20 claims
- 2575US12272598B2Conductive feature of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 2675US11735425B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 2775US2025201627A1Conductive feature of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2874US12183823B2Fin field-effect transistor with a gate structure having a dielectric protection layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·20 claims
- 2974US11996470B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·0 cites·20 claims
- 3074US11901180B2Method of breaking through etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 3174US2024371962A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3274US2023369494A1Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3373US12051626B2Fin Field-Effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 30, 2024·0 cites·20 claims
- 3473US11855193B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 3572US2024063060A1Patterning method and structures resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3672US2025386576A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUTOR MFG COMPANY LTD·Filed 2025·Application pending·0 cites
- 3771US10522662B1FinFET device with T-shaped fin and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·1 cites·20 claims
- 3870US11996324B2Conductive feature of a semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·0 cites·20 claims
- 3969US12068385B2Oxidation to mitigate dry etch and/or wet etch fluorine residueTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 20, 2024·0 cites·20 claims
- 4069US11817330B2Method for processing substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·0 cites·20 claims
- 4169US11588041B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 21, 2023·0 cites·20 claims
- 4269US11309190B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·0 cites·20 claims
- 4369US2023386898A1Etch method for interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4468US11854870B2Etch method for interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·16 claims
- 4568US11309185B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·0 cites·20 claims
- 4668US11227940B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·0 cites·20 claims
- 4767US11749753B2Methods of forming a semiconductor device with a gate structure having a dielectric protection layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 5, 2023·0 cites·20 claims
- 4867US11587875B2Connecting structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 21, 2023·0 cites·20 claims
- 4965US11398391B2Substrate processing apparatus and method for processing substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·0 cites·20 claims
- 5064US11380793B2Fin field-effect transistor device having hybrid work function layer stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 5, 2022·0 cites·20 claims
Showing the top 50 of 59 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Chun-Neng Lin files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →