Inventor · disambiguated record
Chihcheng Liu
Also filed as: LIU CHIHCHENG
29 granted patents·8 pending applications·3 citations·filing 2020–2022
91Inventor score
Files withCHANGXIN MEMORY TECH INC37
Top patents by PatentIndex Score
37 records- 0191US11988704B2Test circuits and semiconductor test methodsCHANGXIN MEMORY TECH INC·Filed 2021·Granted May 21, 2024·2 cites·14 claims
- 0282US11302789B2Semiconductor structure and formation method thereofCHANGXIN MEMORY TECH INC·Filed 2020·Granted Apr 12, 2022·1 cites·15 claims
- 0363US11916044B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Feb 27, 2024·0 cites·15 claims
- 0463US2022238665A1Semiconductor structure and formation method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 0562US12225713B2Semiconductor device, manufacturing method of semiconductor device, and storage deviceCHANGXIN MEMORY TECH INC·Filed 2022·Granted Feb 11, 2025·0 cites·16 claims
- 0660US12119286B2Die, memory and method of manufacturing dieCHANGXIN MEMORY TECH INC·Filed 2022·Granted Oct 15, 2024·0 cites·19 claims
- 0760US11985818B2Anti-fuse devices and anti-fuse unitsCHANGXIN MEMORY TECH INC·Filed 2021·Granted May 14, 2024·0 cites·18 claims
- 0859US11984369B2Semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted May 14, 2024·0 cites·10 claims
- 0958US12040376B2Semiconductor device and preparation method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jul 16, 2024·0 cites·15 claims
- 1058US11985813B2Bit line lead-out structure and preparation method thereforCHANGXIN MEMORY TECH INC·Filed 2021·Granted May 14, 2024·0 cites·9 claims
- 1158US11869608B2Anti-fuse unit and anti-fuse arrayCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 9, 2024·0 cites·14 claims
- 1256US12062610B2Method for forming semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Aug 13, 2024·0 cites·6 claims
- 1355US11984505B2MOSFET devices and manufacturing methods thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted May 14, 2024·0 cites·12 claims
- 1455US11862281B2Word line lead-out structure and method for preparing sameCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 2, 2024·0 cites·10 claims
- 1554US12176254B2PID test structure and semiconductor test structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Dec 24, 2024·0 cites·1 claims
- 1654US12040220B2Semiconductor deviceCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jul 16, 2024·0 cites·14 claims
- 1753US12150293B2Bit line structure, manufacturing method thereof and semiconductor memoryCHANGXIN MEMORY TECH INC·Filed 2021·Granted Nov 19, 2024·0 cites·15 claims
- 1852US12457729B2Method for forming capacitor opening hole and method for forming memory capacitorCHANGXIN MEMORY TECH INC·Filed 2021·Granted Oct 28, 2025·0 cites·20 claims
- 1952US12237384B2Semiconductor device and forming method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted Feb 25, 2025·0 cites·15 claims
- 2052US12046552B2Anti-fuse unit and anti-fuse arrayCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jul 23, 2024·0 cites·15 claims
- 2152US11990340B2Semiconductor device and method of manufacturing the sameCHANGXIN MEMORY TECH INC·Filed 2021·Granted May 21, 2024·0 cites·6 claims
- 2252US11860217B2Test circuits and semiconductor test methodsCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 2, 2024·0 cites·12 claims
- 2352US11335688B1Semiconductor structures and preparation methods thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted May 17, 2022·0 cites·11 claims
- 2452US2022384280A1Semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 2552US2023230981A1Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 2651US12100594B2Active region array formation methodCHANGXIN MEMORY TECH INC·Filed 2021·Granted Sep 24, 2024·0 cites·13 claims
- 2751US11894363B2Semiconductor device with a doped well regionCHANGXIN MEMORY TECH INC·Filed 2021·Granted Feb 6, 2024·0 cites·8 claims
- 2851US11864375B2Memory and method for manufacturing sameCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 2, 2024·0 cites·19 claims
- 2951US2023276618A1Memory and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Application pending·0 cites
- 3050US12453075B2Word line structure, manufacturing method thereof and semiconductor memoryCHANGXIN MEMORY TECH INC·Filed 2021·Granted Oct 21, 2025·0 cites·15 claims
- 3150US12198933B2Forming method of semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 14, 2025·0 cites·17 claims
- 3250US2022223466A1Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Application pending·0 cites
- 3349US2021358926A1Anti-fuse unitCHANGXIN MEMORY TECH INC·Filed 2021·Application pending·0 cites
- 3448US12087581B2Active region, active region array and formation method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted Sep 10, 2024·0 cites·11 claims
- 3548US2022310462A1Semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Application pending·0 cites
- 3645US11888474B2On die termination circuit and memory deviceCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 30, 2024·0 cites·12 claims
- 3738US2021057017A1Wordline driving circuit and memory cellCHANGXIN MEMORY TECH INC·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →