Inventor · disambiguated record
Chang-Miao Liu
Also filed as: LIU CHANG · LIU CHANG-MIAO
69 granted patents·37 pending applications·102 citations·filing 2001–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD93SEMICONDUCTOR MFG INT SHANGHAI CORP4DH TECHNOLOGIES DEV PTE LTD2SEMICONDUCTOR MFG INT CORP2UNITED MICROELECTRONICS CORP2
Top patents by PatentIndex Score
106 records- 0198US11769819B2Semiconductor device structure with metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 26, 2023·4 cites·20 claims
- 0298US11444179B2Isolation structures in multi-gate semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·5 cites·20 claims
- 0398US11139432B1Methods of forming a FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 5, 2021·9 cites·20 claims
- 0498US11107736B1Gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 31, 2021·6 cites·20 claims
- 0596US11948998B2Isolation structures in multi-gate semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·2 cites·20 claims
- 0696US11916105B2Semiconductor device with corner isolation protection and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·3 cites·20 claims
- 0795US12166075B2Method and structure for gate-all-around devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·2 cites·20 claims
- 0894US12166071B2Dielectric fins with air gap and backside self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·2 cites·20 claims
- 0992US11121236B2Semiconductor device with air spacer and stress linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·7 cites·20 claims
- 1090US11387146B2Semiconductor device with air gaps between metal gates and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·2 cites·20 claims
- 1189US11854906B2Gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·1 cites·20 claims
- 1288US6333234B1Method for making a HVMOS transistorUNITED MICROELECTRONICS CORP·Filed 2001·Granted Dec 25, 2001·50 cites·18 claims
- 1385US12218013B2Gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 1485US12132096B2Semiconductor device structure with metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 29, 2024·0 cites·20 claims
- 1585US12015055B2Doping for semiconductor device with conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 18, 2024·0 cites·20 claims
- 1685US2024387691A1Semiconductor device structure with metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1783US12363935B2Methods for forming multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 1883US2024387281A1Semiconductor device with air gaps between metal gates and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1982US12349384B2Isolation structures in multi-gate semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 2082US12100625B2Semiconductor device with air gaps between metal gates and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 2182US10868174B1Devices with strained isolation featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·2 cites·20 claims
- 2282US2025318170A1Methods for forming multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2382US2025366128A1Dielectric constant reduction of gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2482US2024387746A1Method of forming transistors of different configurationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2581US11742386B2Doping for semiconductor device with conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·0 cites·20 claims
- 2681US2025359255A1Epitaxial features in semiconductor devices and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2781US2025311388A1Air spacer formation for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2881US2025366043A1Multi-Gate Devices With Reduced Contact Resistance And Methods Of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2981US2025287655A1Semiconductor device with corner isolation protection and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3080US12317550B2Methods of forming a semiconductor device with corner isolation protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 3180US11355615B2FinFET having fluorine-doped gate sidewall spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·1 cites·15 claims
- 3280US2025351419A1Semiconductor device with hybrid substrate and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3380US2025366155A1Protection layer for reducing sti loss and the methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3479US11075283B2Dielectric constant reduction of gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·2 cites·20 claims
- 3578US11991936B2Method of forming a FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 21, 2024·0 cites·20 claims
- 3678US10347720B2Doping for semiconductor device with conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 9, 2019·1 cites·20 claims
- 3777US11756835B2Semiconductor device with air gaps between metal gates and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·0 cites·20 claims
- 3877US2024096971A1Semiconductor device having contact feature and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3977US2024355898A1Field effect transistor with spacers and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4077US2025176250A1Gate Structures For Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4176US11855155B2Semiconductor device having contact feature and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 4276US11450741B2Doping for semiconductor device with conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·0 cites·20 claims
- 4376US2025318194A1Multi-gate device including semiconductor fin between dielectric fins and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4476US2025311355A1Semiconductor Devices And Methods Of Fabricating The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4576US2025107173A1Method and structure for gate-all-around devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4676US2025301741A1Enlarged backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4775US11715803B2Method of forming transistors of different configurationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 1, 2023·0 cites·20 claims
- 4875US10840375B2Integrated circuits with channel-strain linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·1 cites·20 claims
- 4975US2023387300A1Devices with strained isolation featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5075US2024379817A1Stress-inducing silicon liner in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 106 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →