Inventor · disambiguated record
Ching-Huang Lu
Also filed as: LU CHING-HUANG
99 granted patents·30 pending applications·1,248 citations·filing 2011–2025
99Inventor score
Files withMICRON TECHNOLOGY INC53SANDISK TECHNOLOGIES LLC47SANDISK TECHNOLOGIES INC11CYPRESS SEMICONDUCTOR CORP7SPANSION LLC4
Top patents by PatentIndex Score
129 records- 0199US11195857B2Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layerSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 7, 2021·7 cites·20 claims
- 0299US10629616B1Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layerSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 21, 2020·143 cites·20 claims
- 0399US9728551B1Multi-tier replacement memory stack structure integration schemeSANDISK TECHNOLOGIES INC·Filed 2016·Granted Aug 8, 2017·78 cites·36 claims
- 0498US10923197B2Memory device with compensation for erase speed variations due to blocking oxide layer thinningSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 16, 2021·8 cites·20 claims
- 0598US9443861B1Fluorine-blocking insulating spacer for backside contact structure of three-dimensional memory structuresSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 13, 2016·38 cites·19 claims
- 0697US10685978B1Three-dimensional memory device with drain-select-level isolation structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 16, 2020·18 cites·20 claims
- 0797US10020314B1Forming memory cell film in stack openingSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 10, 2018·20 cites·17 claims
- 0897US10008271B1Programming of dummy memory cell to reduce charge loss in select gate transistorSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jun 26, 2018·44 cites·11 claims
- 0997US9761320B1Reducing hot electron injection type of read disturb during read recovery phase in 3D memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Sep 12, 2017·41 cites·20 claims
- 1097US9748266B1Three-dimensional memory device with select transistor having charge trapping gate dielectric layer and methods of making and operating thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 29, 2017·21 cites·24 claims
- 1196US10762973B1Suppressing program disturb during program recovery in memory deviceSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 1, 2020·25 cites·23 claims
- 1296US10685979B1Three-dimensional memory device with drain-select-level isolation structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 16, 2020·13 cites·22 claims
- 1396US10629272B1Two-stage ramp up of word line voltages in memory device to suppress read disturbSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 21, 2020·27 cites·20 claims
- 1496US10510413B1Multi-pass programming with modified pass voltages to tighten threshold voltage distributionsSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Dec 17, 2019·25 cites·19 claims
- 1596US10373697B1Programming dummy memory cells in erase operation to reduce threshold voltage downshift for select gate transistorsSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 6, 2019·27 cites·20 claims
- 1696US10235294B1Pre-read voltage pulse for first read error handlingSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Mar 19, 2019·36 cites·20 claims
- 1796US9831118B1Reducing neighboring word line in interference using low-k oxideSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 28, 2017·19 cites·20 claims
- 1896US9779948B1Method of fabricating 3D NANDSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 3, 2017·17 cites·20 claims
- 1996US9530785B1Three-dimensional memory devices having a single layer channel and methods of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 27, 2016·24 cites·25 claims
- 2096US9257191B1Charge redistribution during erase in charge trapping memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Feb 9, 2016·25 cites·21 claims
- 2196US8533937B1Method of forming a fully wrapped-around shielded PMR writer poleWANG JINWEN·Filed 2011·Granted Sep 17, 2013·161 cites·21 claims
- 2296US8518832B1Process for masking and removal of residue from complex shapesYANG XIAOYU·Filed 2011·Granted Aug 27, 2013·147 cites·20 claims
- 2395US10665313B1Detecting short circuit between word line and source line in memory device and recovery methodSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 26, 2020·18 cites·20 claims
- 2495US9673216B1Method of forming memory cell filmSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jun 6, 2017·13 cites·20 claims
- 2594US11972122B2Memory read operation using a voltage pattern based on a read command typeMICRON TECHNOLOGY INC·Filed 2022·Granted Apr 30, 2024·2 cites·25 claims
- 2694US10804282B2Three-dimensional memory devices using carbon-doped aluminum oxide backside blocking dielectric layer for etch resistivity enhancement and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 13, 2020·10 cites·13 claims
- 2794US10665299B1Memory device with channel discharge before program-verify based on data state and sub-block positionSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 26, 2020·17 cites·20 claims
- 2894US9230663B1Programming memory with reduced short-term charge lossSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·18 cites·25 claims
- 2993US12026394B2Adaptive time sense parameters and overdrive voltage parameters for wordlines at corner temperatures in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2022·Granted Jul 2, 2024·2 cites·20 claims
- 3093US12014049B2Adaptive sensing time for memory operationsMICRON TECHNOLOGY INC·Filed 2022·Granted Jun 18, 2024·2 cites·20 claims
- 3193US11037640B2Multi-pass programming process for memory device which omits verify test in first program passSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 15, 2021·3 cites·20 claims
- 3292US10741253B1Memory device with compensation for erase speed variations due to blocking oxide layer thinningSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 11, 2020·10 cites·19 claims
- 3392US10566059B2Three dimensional NAND memory device with drain select gate electrode shared between multiple stringsSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Feb 18, 2020·13 cites·15 claims
- 3492US10276248B1Early ramp down of dummy word line voltage during read to suppress select gate transistor downshiftSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 30, 2019·13 cites·20 claims
- 3592US9830963B1Word line-dependent and temperature-dependent erase depthSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 28, 2017·14 cites·19 claims
- 3691US10943917B2Three-dimensional memory device with drain-select-level isolation structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Mar 9, 2021·8 cites·13 claims
- 3791US10665301B1Memory device with compensation for program speed variations due to block oxide thinningSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 26, 2020·8 cites·10 claims
- 3891US9899410B1Charge storage region in non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Feb 20, 2018·7 cites·16 claims
- 3990US10811109B2Multi-pass programming process for memory device which omits verify test in first program passSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Oct 20, 2020·8 cites·16 claims
- 4090US10446244B1Adjusting voltage on adjacent word line during verify of memory cells on selected word line in multi-pass programmingSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Oct 15, 2019·10 cites·20 claims
- 4190US10115464B1Electric field to reduce select gate threshold voltage shiftSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 30, 2018·10 cites·20 claims
- 4290US9324439B1Weak erase after programming to improve data retention in charge-trapping memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 26, 2016·14 cites·21 claims
- 4390US8866213B2Non-Volatile memory with silicided bit line contactsSPANSION LLC·Filed 2013·Granted Oct 21, 2014·6 cites·15 claims
- 4489US9378832B1Method to recover cycling damage and improve long term data retentionSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jun 28, 2016·12 cites·24 claims
- 4588US12014050B2Adaptive time sense parameters and overdrive voltage parameters for respective groups of wordlines in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2022·Granted Jun 18, 2024·1 cites·20 claims
- 4688US9852803B2Dummy word line control scheme for non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2016·Granted Dec 26, 2017·9 cites·18 claims
- 4787US10706941B1Multi-state programming in memory device with loop-dependent bit line voltage during verifySANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 7, 2020·6 cites·20 claims
- 4886US9252154B2Non-volatile memory with silicided bit line contactsSPANSION LLC·Filed 2014·Granted Feb 2, 2016·4 cites·20 claims
- 4985US9437305B2Programming memory with reduced short-term charge lossSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 6, 2016·6 cites·20 claims
- 5083US10541035B1Read bias adjustment for compensating threshold voltage shift due to lateral charge movementSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jan 21, 2020·6 cites·20 claims
Showing the top 50 of 129 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →