Inventor · disambiguated record
Chung-Chiang Min
Also filed as: MIN CHUNG-CHIANG
37 granted patents·8 pending applications·60 citations·filing 2007–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD42MIN CHUNG-CHIANG1NANYA TECHNOLOGY CORP1TAIWAN SEMICONDUCTOR MFG1
Top patents by PatentIndex Score
45 records- 0196US11818962B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·20 claims
- 0296US10454021B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 22, 2019·12 cites·19 claims
- 0395US9536969B2Self-aligned split gate flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 3, 2017·22 cites·20 claims
- 0493US9711508B2Capacitor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·9 cites·19 claims
- 0591US2025329351A1Trench formation scheme for programmable metallization cell to prevent metal redepositTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0690US2025359071A1Method of forming memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0789US10720568B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 21, 2020·3 cites·19 claims
- 0888US11121308B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·3 cites·20 claims
- 0988US11088202B2Method of forming memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·3 cites·20 claims
- 1085US12444650B2Etch stop layer for memory device formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 14, 2025·0 cites·20 claims
- 1185US12274182B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 1284US2025316537A1Semiconductor memory device and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1382US9564448B2Flash memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·2 cites·20 claims
- 1482US2025234791A1Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1581US2024172453A1Memory device with flat-top bottom electrodes and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1681US2024023460A1Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1780US12501842B2Non-volatile memory device and manufacturing technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 1880US12477746B2Method of forming memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 18, 2025·0 cites·20 claims
- 1979US12354695B2Trench formation scheme for programmable metallization cell to prevent metal redepositTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 2079US12302767B2Buffer layer in memory cell to prevent metal redepositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 2177US12027420B2Etch stop layer for memory device formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 2277US11925032B2Memory device with flat-top bottom electrodes and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 2376US11665911B2Method of forming memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
- 2475US11342379B2Trench formation scheme for programmable metallization cell to prevent metal redepositTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 24, 2022·2 cites·20 claims
- 2574US11785861B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 2674US2025241212A1Buffer layer in memory cell to prevent metal redepositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2772US11785786B2Trench formation scheme for programmable metallization cell to prevent metal redepositTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·20 claims
- 2871US11362265B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·0 cites·20 claims
- 2968US11532785B2Buffer layer in memory cell to prevent metal redepositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 3068US11495743B2Non-volatile memory device and manufacturing technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·0 cites·20 claims
- 3166US10825825B2Flash memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 3, 2020·0 cites·20 claims
- 3264US11437431B2Memory device with flat-top bottom electrodes and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·20 claims
- 3361US10355011B2Method for forming flash memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·0 cites·20 claims
- 3460US9859295B2Method for forming flash memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 2, 2018·0 cites·20 claims
- 3557US9570457B2Method to control the common drain of a pair of control gates and to improve inter-layer dielectric (ILD) filling between the control gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 14, 2017·0 cites·20 claims
- 3656US11380580B2Etch stop layer for memory device formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·0 cites·20 claims
- 3756US9048316B2Flash memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 2, 2015·0 cites·14 claims
- 3855US9673204B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 6, 2017·0 cites·20 claims
- 3955US8524093B2Method for forming a deep trenchMIN CHUNG-CHIANG·Filed 2007·Granted Sep 3, 2013·2 cites·8 claims
- 4053US10872895B2Method of manufacturing capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 22, 2020·0 cites·20 claims
- 4152US10276584B2Method to control the common drain of a pair of control gates and to improve inter-layer dielectric (ILD) filling between the control gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·0 cites·20 claims
- 4250US9799665B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 24, 2017·0 cites·20 claims
- 4345US8853768B1Method of fabricating MONOS semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 7, 2014·0 cites·20 claims
- 4442US9786674B2Discrete storage element formation for thin-film storage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 10, 2017·0 cites·20 claims
- 4540US2010233881A1Method of manufacturing supporting structures for stack capacitor in semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2009·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →