Inventor · disambiguated record
Christopher Nassar
Also filed as: NASSAR CHRISTOPHER
9 granted patents·1 pending application·64 citations·filing 2012–2019
84Inventor score
Top patents by PatentIndex Score
10 records- 0195US10269932B1Asymmetric formation of epi semiconductor material in source/drain regions of FinFET devicesGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 23, 2019·42 cites·17 claims
- 0286US9117845B2Production of laterally diffused oxide semiconductor (LDMOS) device and a bipolar junction transistor (BJT) device using a semiconductor processFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Aug 25, 2015·8 cites·20 claims
- 0384US8878275B2LDMOS device with double-sloped field plateFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Nov 4, 2014·7 cites·17 claims
- 0480US10418455B2Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 17, 2019·2 cites·9 claims
- 0577US10991796B2Source/drain contact depth controlGLOBALFOUNDRIES US INC·Filed 2018·Granted Apr 27, 2021·2 cites·10 claims
- 0666US9112346B2Input power protectionFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Aug 18, 2015·2 cites·24 claims
- 0759US10522639B2Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET deviceGLOBALFOUNDRIES INC·Filed 2019·Granted Dec 31, 2019·0 cites·12 claims
- 0859US8987107B2Production of high-performance passive devices using existing operations of a semiconductor processFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Mar 24, 2015·1 cites·19 claims
- 0944US8822296B2Use of plate oxide layers to increase bulk oxide thickness in semiconductor devicesFAIRCHILD SEMICONDUCTOR·Filed 2012·Granted Sep 2, 2014·0 cites·20 claims
- 1032US2019305105A1Gate skirt oxidation for improved finfet performance and method for producing the sameGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →