Inventor · disambiguated record
Chando Park
Also filed as: PARK CHANDO
60 granted patents·7 pending applications·1,314 citations·filing 2007–2023
99Inventor score
Files withQUALCOMM INC42APPLIED MATERIALS INC10HGST Netherlands BV4WESTERN DIGITAL FREMONT LLC4PAKALA MAHENDRA2
Top patents by PatentIndex Score
67 records- 0199US9379314B2Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)QUALCOMM INC·Filed 2013·Granted Jun 28, 2016·65 cites·10 claims
- 0299US9142762B1Magnetic tunnel junction and method for fabricating a magnetic tunnel junctionQUALCOMM INC·Filed 2014·Granted Sep 22, 2015·45 cites·10 claims
- 0399US8381391B2Method for providing a magnetic recording transducerWESTERN DIGITAL FREMONT LLC·Filed 2009·Granted Feb 26, 2013·148 cites·18 claims
- 0498US10483457B1Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and arrayQUALCOMM INC·Filed 2018·Granted Nov 19, 2019·43 cites·8 claims
- 0598US10311930B1One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operationsQUALCOMM INC·Filed 2018·Granted Jun 4, 2019·29 cites·30 claims
- 0698US10043967B2Self-compensation of stray field of perpendicular magnetic elementsQUALCOMM INC·Filed 2014·Granted Aug 7, 2018·36 cites·12 claims
- 0798US9634237B2Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devicesQUALCOMM INC·Filed 2014·Granted Apr 25, 2017·46 cites·5 claims
- 0898US8611055B1Magnetic etch-stop layer for magnetoresistive read headsPAKALA MAHENDRA·Filed 2009·Granted Dec 17, 2013·167 cites·11 claims
- 0998US8559141B1Spin tunneling magnetic element promoting free layer crystal growth from a barrier layer interfacePAKALA MAHENDRA·Filed 2007·Granted Oct 15, 2013·157 cites·13 claims
- 1098US8194365B1Method and system for providing a read sensor having a low magnetostriction free layerLENG QUNWEN·Filed 2009·Granted Jun 5, 2012·167 cites·27 claims
- 1197US10636962B2Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing dataQUALCOMM INC·Filed 2018·Granted Apr 28, 2020·9 cites·29 claims
- 1297US9824735B1System and method to generate a random numberQUALCOMM INC·Filed 2016·Granted Nov 21, 2017·34 cites·24 claims
- 1397US8537502B1Method and system for providing a magnetic transducer having improved shield-to-shield spacingPARK CHANDO·Filed 2009·Granted Sep 17, 2013·150 cites·12 claims
- 1496US10381060B2High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell arrayQUALCOMM INC·Filed 2016·Granted Aug 13, 2019·25 cites·18 claims
- 1596US9269893B2Replacement conductive hard mask for multi-step magnetic tunnel junction (MTJ) etchQUALCOMM INC·Filed 2014·Granted Feb 23, 2016·22 cites·13 claims
- 1694US9590010B1Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layerQUALCOMM INC·Filed 2016·Granted Mar 7, 2017·18 cites·29 claims
- 1793US9870811B2Physically unclonable function based on comparison of MTJ resistancesQUALCOMM INC·Filed 2016·Granted Jan 16, 2018·10 cites·15 claims
- 1893US9620706B2Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction deviceQUALCOMM INC·Filed 2014·Granted Apr 11, 2017·10 cites·30 claims
- 1991US10460780B2Magneto-resistive random access memory (MRAM) employing an integrated physically unclonable function (PUF) memoryQUALCOMM INC·Filed 2018·Granted Oct 29, 2019·7 cites·21 claims
- 2090US10756259B2Spin orbit torque MRAM and manufacture thereofAPPLIED MATERIALS INC·Filed 2019·Granted Aug 25, 2020·3 cites·20 claims
- 2190US10096649B2Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devicesQUALCOMM INC·Filed 2016·Granted Oct 9, 2018·7 cites·18 claims
- 2289US10249814B1Dynamic memory protectionQUALCOMM INC·Filed 2018·Granted Apr 2, 2019·8 cites·20 claims
- 2389US8958180B1Capping materials for magnetic read head sensorHGST Netherlands BV·Filed 2013·Granted Feb 17, 2015·10 cites·18 claims
- 2488US10460785B1Parallel write scheme utilizing spin hall effect-assisted spin transfer torque random access memoryQUALCOMM INC·Filed 2018·Granted Oct 29, 2019·8 cites·11 claims
- 2587US8755152B1Method and system for providing an improved sensor stack for a recording headPARK CHANDO·Filed 2008·Granted Jun 17, 2014·8 cites·33 claims
- 2687US8619394B1Magnetic tunnel junction with barrier cooling for magnetic read headHGST Netherlands BV·Filed 2012·Granted Dec 31, 2013·9 cites·19 claims
- 2786US10134808B2Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM)QUALCOMM INC·Filed 2016·Granted Nov 20, 2018·8 cites·27 claims
- 2886US9614147B2Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)QUALCOMM INC·Filed 2016·Granted Apr 4, 2017·6 cites·20 claims
- 2986US8427791B2Magnetic tunnel junction having a magnetic insertion layer and methods of producing the sameGAO ZHENG·Filed 2010·Granted Apr 23, 2013·6 cites·21 claims
- 3085US9064507B1Magnetic etch-stop layer for magnetoresistive read headsWESTERN DIGITAL FREMONT LLC·Filed 2013·Granted Jun 23, 2015·5 cites·12 claims
- 3184US9601687B2Dual interface free layer with amorphous cap layer for perpendicular magnetic tunnel junctionQUALCOMM INC·Filed 2014·Granted Mar 21, 2017·8 cites·9 claims
- 3284US9318133B2Recessed antiferromagnetic design with antiparallel pinned stitch layers for improved pinning fieldHGST Netherlands BV·Filed 2013·Granted Apr 19, 2016·7 cites·17 claims
- 3383US10547460B2Message-based key generation using physical unclonable function (PUF)QUALCOMM INC·Filed 2016·Granted Jan 28, 2020·4 cites·30 claims
- 3483US9728718B2Magnetic tunnel junction (MTJ) device arrayQUALCOMM INC·Filed 2016·Granted Aug 8, 2017·3 cites·20 claims
- 3581US9214168B1Method and system for providing a magnetic transducer having improved shield-to-shield spacingWESTERN DIGITAL FREMONT LLC·Filed 2013·Granted Dec 15, 2015·4 cites·23 claims
- 3680US9349939B2Etch-resistant protective coating for a magnetic tunnel junction deviceQUALCOMM INC·Filed 2014·Granted May 24, 2016·3 cites·29 claims
- 3779US10431734B2Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memoryQUALCOMM INC·Filed 2017·Granted Oct 1, 2019·1 cites·12 claims
- 3879US10103319B2Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devicesQUALCOMM INC·Filed 2017·Granted Oct 16, 2018·1 cites·16 claims
- 3979US9666792B2Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) elementsQUALCOMM INC·Filed 2015·Granted May 30, 2017·3 cites·29 claims
- 4079US9548446B2Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ)QUALCOMM INC·Filed 2016·Granted Jan 17, 2017·4 cites·6 claims
- 4176US9570509B2Magnetic tunnel junction (MTJ) device arrayQUALCOMM INC·Filed 2015·Granted Feb 14, 2017·2 cites·30 claims
- 4275US9444035B2Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabricationQUALCOMM INC·Filed 2014·Granted Sep 13, 2016·2 cites·24 claims
- 4374US12201030B2Spin-orbit torque MRAM structure and manufacture thereofAPPLIED MATERIALS INC·Filed 2023·Granted Jan 14, 2025·0 cites·3 claims
- 4472US9721634B2Decoupling of source line layout from access transistor contact placement in a magnetic tunnel junction (MTJ) memory bit cell to facilitate reduced contact resistanceQUALCOMM INC·Filed 2015·Granted Aug 1, 2017·3 cites·36 claims
- 4571US11818959B2Methods for forming structures for MRAM applicationsAPPLIED MATERIALS INC·Filed 2021·Granted Nov 14, 2023·0 cites·20 claims
- 4667US11621393B2Top buffer layer for magnetic tunnel junction applicationAPPLIED MATERIALS INC·Filed 2020·Granted Apr 4, 2023·0 cites·18 claims
- 4764US10833254B2Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memoryQUALCOMM INC·Filed 2019·Granted Nov 10, 2020·0 cites·5 claims
- 4864US9003640B1Method for fabricating a magnetic recording transducerWESTERN DIGITAL FREMONT LLC·Filed 2013·Granted Apr 14, 2015·0 cites·8 claims
- 4963US9385309B2Smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materialsQUALCOMM INC·Filed 2014·Granted Jul 5, 2016·1 cites·12 claims
- 5063US8553371B2TMR reader without DLC capping structureZHU HONGLIN·Filed 2010·Granted Oct 8, 2013·2 cites·18 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →