Inventor · disambiguated record
Choon Kun Ryu
Also filed as: RYU CHOON K · RYU CHOON-KUN
13 granted patents·5 pending applications·1,837 citations·filing 1992–2015
93Inventor score
Files withHYNIX SEMICONDUCTOR INC6APPLIED MATERIALS INC3NAKAYAMA MASAHIKO3RYU CHOON-KUN3PARK HYUNG-SOON1
Top patents by PatentIndex Score
18 records- 0198US7211524B2Method of forming insulating layer in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted May 1, 2007·521 cites·18 claims
- 0298US5908672AMethod and apparatus for depositing a planarized passivation layerAPPLIED MATERIALS INC·Filed 1997·Granted Jun 1, 1999·593 cites·21 claims
- 0396US5344676AMethod and apparatus for producing nanodrops and nanoparticles and thin film deposits therefromUNIV ILLINOIS·Filed 1992·Granted Sep 6, 1994·148 cites·18 claims
- 0495US9385304B2Magnetic memory and method of manufacturing the sameNAKAYAMA MASAHIKO·Filed 2014·Granted Jul 5, 2016·15 cites·9 claims
- 0595US6190233B1Method and apparatus for improving gap-fill capability using chemical and physical etchbacksAPPLIED MATERIALS INC·Filed 1998·Granted Feb 20, 2001·277 cites·11 claims
- 0695US5990000AMethod and apparatus for improving gap-fill capability using chemical and physical etchbacksAPPLIED MATERIALS INC·Filed 1997·Granted Nov 23, 1999·270 cites·14 claims
- 0778US9123879B2Magnetoresistive element and method of manufacturing the sameNAKAYAMA MASAHIKO·Filed 2014·Granted Sep 1, 2015·3 cites·7 claims
- 0867US9406871B2Magnetoresistive element and method of manufacturing the sameNAKAYAMA MASAHIKO·Filed 2015·Granted Aug 2, 2016·1 cites·12 claims
- 0966US8252686B2Method for forming copper wiring in a semiconductor devicePARK HYUNG SOON·Filed 2009·Granted Aug 28, 2012·3 cites·48 claims
- 1059US7205242B2Method for forming isolation layer in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Apr 17, 2007·5 cites·18 claims
- 1148US2013248806A1Variable resistance memory device and method for fabricating the sameRYU CHOON-KUN·Filed 2012·Application pending·0 cites
- 1247US2013193402A1Phase-change random access memory device and method of manufacturing the sameRYU CHOON KUN·Filed 2012·Application pending·0 cites
- 1343US7183173B2Method for forming isolation film in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Feb 27, 2007·0 cites·7 claims
- 1443US6737349B2Method of forming a copper wiring in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted May 18, 2004·1 cites·12 claims
- 1542US7022624B2Semiconductor device and method of fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Apr 4, 2006·0 cites·8 claims
- 1637US2016149121A1Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2015·Application pending·0 cites
- 1737US2006240678A1Method of forming a LP-CVD oxide film without oxidizing an underlying metal filmHYNIX SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 1837US2012100707A1Method for fabricating non-volatile memory device with three-dimensional structureRYU CHOON-KUN·Filed 2011·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Choon Kun Ryu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →