Inventor · disambiguated record
Christoph Schwan
Also filed as: SCHWAN CHRISTOPH
23 granted patents·5 pending applications·362 citations·filing 2001–2011
96Inventor score
Files withADVANCED MICRO DEVICES INC14KURZ ANDREAS6GLOBALFOUNDRIES INC2SCHWAN CHRISTOPH2GRIEBENOW UWE1
Top patents by PatentIndex Score
28 records- 0197US8110487B2Method of creating a strained channel region in a transistor by deep implantation of strain-inducing species below the channel regionGRIEBENOW UWE·Filed 2008·Granted Feb 7, 2012·104 cites·20 claims
- 0289US6696334B1Method for formation of a differential offset spacerADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 24, 2004·55 cites·19 claims
- 0386US7064071B2Method of forming a conformal spacer adjacent to a gate electrode structureADVANCED MICRO DEVICES INC·Filed 2004·Granted Jun 20, 2006·41 cites·32 claims
- 0484US7547610B2Method of making a semiconductor device comprising isolation trenches inducing different types of strainADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 16, 2009·11 cites·12 claims
- 0582US8806824B2Wall construction and component for the sameSCHWAN CHRISTOPH·Filed 2002·Granted Aug 19, 2014·38 cites·11 claims
- 0682US7838359B2Technique for forming contact insulation layers and silicide regions with different characteristicsADVANCED MICRO DEVICES INC·Filed 2006·Granted Nov 23, 2010·10 cites·13 claims
- 0781US8564089B2Electronic fuse structure formed using a metal gate electrode material stack configurationKURZ ANDREAS·Filed 2010·Granted Oct 22, 2013·6 cites·17 claims
- 0876US8617940B2SOI device with a buried insulating material having increased etch resistivityKURZ ANDREAS·Filed 2009·Granted Dec 31, 2013·5 cites·20 claims
- 0975US7556996B2Field effect transistor comprising a stressed channel region and method of forming the sameADVANCED MICRO DEVICES INC·Filed 2007·Granted Jul 7, 2009·7 cites·6 claims
- 1074US6579801B1Method for enhancing shallow trench top corner rounding using endpoint control of nitride layer etch process with appropriate etch frontADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 17, 2003·18 cites·26 claims
- 1172US7713815B2Semiconductor device including a vertical decoupling capacitorGLOBALFOUNDRIES INC·Filed 2006·Granted May 11, 2010·5 cites·9 claims
- 1272US7192881B2Method of forming sidewall spacer elements for a circuit element by increasing an etch selectivityADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 20, 2007·14 cites·15 claims
- 1368US7659170B2Method of increasing transistor drive current by recessing an isolation trenchGLOBALFOUNDRIES INC·Filed 2007·Granted Feb 9, 2010·5 cites·13 claims
- 1466US7098140B2Method of compensating for etch rate non-uniformities by ion implantationADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 29, 2006·10 cites·31 claims
- 1566US6969676B2Method of adjusting etch selectivity by adapting aspect ratios in a multi-level etch processADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 29, 2005·11 cites·28 claims
- 1662US7838354B2Method for patterning contact etch stop layers by using a planarization processADVANCED MICRO DEVICES INC·Filed 2007·Granted Nov 23, 2010·2 cites·20 claims
- 1761US7005305B2Signal layer for generating characteristic optical plasma emissionsADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 28, 2006·7 cites·25 claims
- 1860US8609485B2Methods of forming efuse devicesKURZ ANDREAS·Filed 2010·Granted Dec 17, 2013·1 cites·10 claims
- 1960US7005358B2Technique for forming recessed sidewall spacers for a polysilicon lineADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 28, 2006·9 cites·33 claims
- 2056US8138571B2Semiconductor device comprising isolation trenches inducing different types of strainSCHWAN CHRISTOPH·Filed 2009·Granted Mar 20, 2012·1 cites·14 claims
- 2146US7338872B2Method of depositing a layer of a material on a substrateADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 4, 2008·2 cites·11 claims
- 2245US8193066B2Semiconductor device comprising a silicon/germanium resistorKURZ ANDREAS·Filed 2009·Granted Jun 5, 2012·0 cites·4 claims
- 2339US2004118516A1Plasma parameter control using learning dataFiled 2003·Application pending·0 cites
- 2438US2005233532A1Method of forming sidewall spacersLENSKI MARKUS·Filed 2005·Application pending·0 cites
- 2537US2004241917A1Method of forming a substrate contact for an SOI semiconductor deviceFiled 2003·Application pending·0 cites
- 2636US2012164799A1Method of Forming a Semiconductor Device Comprising eFuses of Increased Programming WindowKURZ ANDREAS·Filed 2011·Application pending·0 cites
- 2736US2011186916A1Semiconductor resistors formed in a semiconductor device comprising metal gates by reducing conductivity of a metal-containing cap materialKURZ ANDREAS·Filed 2010·Application pending·0 cites
- 2834US7563731B2Field effect transistor having a stressed dielectric layer based on an enhanced device topographyADVANCED MICRO DEVICES INC·Filed 2007·Granted Jul 21, 2009·0 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →