Inventor · disambiguated record
Che Chi Shih
Also filed as: SHIH CHE CHI
3 granted patents·33 pending applications·1 citations·filing 2021–2025
49Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD36
Top patents by PatentIndex Score
36 records- 0187US12131954B1Selective epitaxy process for the formation of CFET local interconnectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 29, 2024·1 cites·20 claims
- 0279US2025359173A1Stacked multi-gate device with barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0378US2025364477A1Semiconductor device and method having high-kappa bonding layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0477US2025343089A1Heat dissipation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0577US2025351550A1Stacked multi-gate device with contact feature and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0676US2025357241A1Heat sink for stacked multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0776US2025359286A1Source/Drains for Stacked Device Structures and Methods of Fabrication ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0876US2025357251A1Integrated Circuit with Enhanced Thermal Dissipation StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0975US2025336762A1Integrated circuit device with thermoelectric coolingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1074US2025359329A1Gate patterning for stacked device structure using self-assembled monolayerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1174US2025351536A1Selective epitaxy process for the formation of cfet local interconnectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1274US2025338562A1Semiconductor device and forming method with channel feature thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1372US2025308888A1Carrier wafer debonding process and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1471US2025140642A1Integrated circuit device with thermoelectric coolingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1570US2025194224A1Selective epitaxy process for the formation of cfet local interconnectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1670US2025261432A1Stacked multi-gate device with contact feature and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1770US2025323156A1Ic structure with high thermal conductivity layer on semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1869US2024363421A1Semiconductor Devices With A Rare Earth Metal Oxide LayerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1969US2025132150A1Carrier wafer debonding process and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2068US2025140639A1Integrated Circuit with Enhanced Thermal Dissipation StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2168US2024274485A1Heat dissipation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2268US2024413039A1Heat sink for stacked multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2368US2025203939A1Semiconductor device and forming method with channel feature thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2467US2025125262A1Ic structure with high thermal conductivity layer on semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2567US2024321990A1Stacked multi-gate device with barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2667US2025169158A1Source/Drains for Stacked Device Structures and Methods of Fabrication ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2767US2024312846A1Gate patterning for stacked device structure using self-assembled monolayerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2865US2023317674A1Semiconductor device and method having high-kappa bonding layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2964US12062576B2Semiconductor devices with a rare earth metal oxide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 13, 2024·0 cites·20 claims
- 3062US2025224333A1Thermal property measurement method for 3d thermal imagingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3161US12501670B2Isolation structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 3260US2025357256A1Thermal conductive bonding structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3358US2025118619A1Thermal conductive bonding structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3455US2025267915A1Methods for forming stacked multi-gate device using vertical dipole patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3554US2025006561A1Stacked multi-gate device with reduced contact resistance and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3653US2024355822A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →