Inventor · disambiguated record
Chi-Yuan Shih
Also filed as: SHIH CHI-YUAN
58 granted patents·32 pending applications·202 citations·filing 2004–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD69TAIWAN SEMICONDUCTOR MFG9CALIFORNIA INST OF TECHN4WANN CLEMENT HSINGJEN4SHIH CHI-YUAN3
Top patents by PatentIndex Score
90 records- 0197US11856862B2Fatigue-free bipolar loop treatment to reduce imprint effect in piezoelectric deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0296US9553025B2Selective Fin-shaping processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 24, 2017·14 cites·20 claims
- 0396US9214556B2Self-aligned dual-metal silicide and germanide formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 15, 2015·23 cites·20 claims
- 0495US9337285B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 10, 2016·9 cites·20 claims
- 0595US9287262B2Passivated and faceted for fin field effect transistorTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 15, 2016·13 cites·20 claims
- 0695US8946829B2Selective fin-shaping process using plasma doping and etching for 3-dimensional transistor applicationsWANN CLEMENT HSINGJEN·Filed 2011·Granted Feb 3, 2015·17 cites·12 claims
- 0793US12237227B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·2 cites·20 claims
- 0893US11456330B2Fatigue-free bipolar loop treatment to reduce imprint effect in piezoelectric deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 27, 2022·3 cites·20 claims
- 0993US9136383B2Contact structure of semiconductor deviceWANN CLEMENT HSINGJEN·Filed 2012·Granted Sep 15, 2015·13 cites·20 claims
- 1090US9455325B2Fin field-effect transistors having controlled fin heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 27, 2016·6 cites·20 claims
- 1190US8963257B2Fin field effect transistors and methods for fabricating the sameWANN CLEMENT HSINGJEN·Filed 2011·Granted Feb 24, 2015·8 cites·20 claims
- 1290US7530259B2On-chip temperature controlled liquid chromatography methods and devicesCALIFORNIA INST OF TECHN·Filed 2005·Granted May 12, 2009·16 cites·16 claims
- 1389US10535573B2System and method for test key characterizing wafer processing stateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 14, 2020·4 cites·20 claims
- 1489US10032889B2Self-aligned passivation of active regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 24, 2018·4 cites·20 claims
- 1589US9953975B2Methods for forming STI regions in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 24, 2018·11 cites·20 claims
- 1689US9530710B2Passivation structure of fin field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 27, 2016·5 cites·20 claims
- 1787US9041158B2Method of forming fin field-effect transistors having controlled fin heightWANN CLEMENT HSINGJEN·Filed 2012·Granted May 26, 2015·8 cites·20 claims
- 1887US8592287B2Overlay alignment mark and method of detecting overlay alignment error using the markSHIH CHI-YUAN·Filed 2011·Granted Nov 26, 2013·7 cites·13 claims
- 1986US12232424B2Fatigue-free bipolar loop treatment to reduce imprint effect in piezoelectric deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 2086US9093335B2Calculating carrier concentrations in semiconductor Fins using probed resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 28, 2015·5 cites·20 claims
- 2186US9048317B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 2, 2015·6 cites·20 claims
- 2285US9627280B2Methods for probing semiconductor fins through four-point probe and determining carrier concentrationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·3 cites·20 claims
- 2383US8183701B2Structure of stacking scatterometry based overlay marks for marks footprint reductionSHIH CHI-YUAN·Filed 2009·Granted May 22, 2012·7 cites·13 claims
- 2482US2025312823A1Transducer device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2581US2024375146A1Transducer Device and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2680US2024373753A1Integrated heater (and related method) to recover degraded piezoelectric device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2779US2025048660A1Getter layer for hydrogen in a mim deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2878US12082505B2Integrated heater (and related method) to recover degraded piezoelectric device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·20 claims
- 2978US2024290541A1Integration scheme for breakdown voltage enhancement of a piezoelectric metal-insulator-metal deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3077US7629797B2Resonance-induced sensitivity enhancement method for conductivity sensorsCALIFORNIA INST OF TECHN·Filed 2007·Granted Dec 8, 2009·5 cites·18 claims
- 3176US11855219B2Passivated and faceted for fin field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 3276US9412847B2Self-aligned passivation of active regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 9, 2016·2 cites·20 claims
- 3375US2025295037A1Fatigue-free bipolar loop treatment to reduce imprint effect in piezoelectric deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3474US2025329594A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3574US2024379659A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3673US12166067B2Titanium layer as getter layer for hydrogen in a MIM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·20 claims
- 3773US11984261B2Integration scheme for breakdown voltage enhancement of a piezoelectric metal-insulator-metal deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 14, 2024·0 cites·20 claims
- 3873US9142474B2Passivation structure of fin field effect transistorTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 22, 2015·2 cites·20 claims
- 3972US2023372970A1Transducer device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4072US2023381815A1Transducer device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4171US8574432B2Integrated chromatography devices and systems for monitoring analytes in real time and methods for manufacturing the sameSHIH CHI-YUAN·Filed 2006·Granted Nov 5, 2013·3 cites·20 claims
- 4270US10186602B2Fin structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 22, 2019·1 cites·20 claims
- 4370US8721892B2Integrated chromatography devices and systems for monitoring analytes in real time and methods for manufacturing the sameCALIFORNIA INST OF TECHN·Filed 2013·Granted May 13, 2014·1 cites·20 claims
- 4469US8605276B2Enhanced defect scanningWU CHIH-JEN·Filed 2011·Granted Dec 10, 2013·2 cites·18 claims
- 4567US12408420B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 4666US11730058B2Integrated heater (and related method) to recover degraded piezoelectric device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 15, 2023·0 cites·20 claims
- 4766US2025159969A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4865US12400926B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 4964US11158743B2Passivated and faceted for fin field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·0 cites·13 claims
- 5064US10943995B2Self-aligned passivation of active regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 9, 2021·0 cites·20 claims
Showing the top 50 of 90 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →