Inventor · disambiguated record
Chang Soo Suh
Also filed as: SUH CHANG SOO
23 granted patents·16 pending applications·798 citations·filing 2006–2024
96Inventor score
Top patents by PatentIndex Score
39 records- 0198US7939391B2III-Nitride devices with recessed gatesTRANSPHORM INC·Filed 2010·Granted May 10, 2011·77 cites·18 claims
- 0298US7915643B2Enhancement mode gallium nitride power devicesTRANSPHORM INC·Filed 2007·Granted Mar 29, 2011·155 cites·14 claims
- 0398US7851825B2Insulated gate e-mode transistorsTRANSPHORM INC·Filed 2008·Granted Dec 14, 2010·124 cites·33 claims
- 0497US8633518B2Gallium nitride power devicesTRANSPHORM INC·Filed 2012·Granted Jan 21, 2014·48 cites·21 claims
- 0597US8344424B2Enhancement mode gallium nitride power devicesTRANSPHORM INC·Filed 2012·Granted Jan 1, 2013·44 cites·9 claims
- 0697US7795642B2III-nitride devices with recessed gatesTRANSPHORM INC·Filed 2008·Granted Sep 14, 2010·106 cites·18 claims
- 0796US8193562B2Enhancement mode gallium nitride power devicesSUH CHANG SOO·Filed 2011·Granted Jun 5, 2012·53 cites·20 claims
- 0896US7948011B2N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistorUNIV CALIFORNIA·Filed 2006·Granted May 24, 2011·81 cites·37 claims
- 0996US7728356B2P-GaN/AlGaN/AlN/GaN enhancement-mode field effect transistorUNIV CALIFORNIA·Filed 2008·Granted Jun 1, 2010·73 cites·10 claims
- 1094US9343560B2Gallium nitride power devicesTRANSPHORM INC·Filed 2013·Granted May 17, 2016·14 cites·20 claims
- 1193US9882041B1HEMT having conduction barrier between drain fingertip and sourceTEXAS INSTRUMENTS INC·Filed 2016·Granted Jan 30, 2018·8 cites·8 claims
- 1280US10680093B2HEMT having conduction barrier between drain fingertip and sourceTEXAS INSTRUMENTS INC·Filed 2018·Granted Jun 9, 2020·2 cites·20 claims
- 1376US7571948B2Apparatus for preventing vehicle tray from being opened by inertia loadHYUNDAI MOTOR CO LTD·Filed 2007·Granted Aug 11, 2009·11 cites·4 claims
- 1472US9409319B2Method of laser processing mold surfaceHYUNDAI MOTOR CO LTD·Filed 2013·Granted Aug 9, 2016·2 cites·7 claims
- 1572US2024274705A1Normally-on gallium nitride based transistor with p-type gateTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 1669US12046666B2Gallium nitride (GaN) based transistor with multiple p-GaN blocksTEXAS INSTRUMENTS INC·Filed 2021·Granted Jul 23, 2024·0 cites·27 claims
- 1769US11177378B2HEMT having conduction barrier between drain fingertip and sourceTEXAS INSTRUMENTS INC·Filed 2020·Granted Nov 16, 2021·0 cites·20 claims
- 1862US11888027B2Monolithic integration of high and low-side GaN FETs with screening back gating effectTEXAS INSTRUMENTS INC·Filed 2021·Granted Jan 30, 2024·0 cites·20 claims
- 1960US11978790B2Normally-on gallium nitride based transistor with p-type gateTEXAS INSTRUMENTS INC·Filed 2020·Granted May 7, 2024·0 cites·24 claims
- 2059US11049960B2Gallium nitride (GaN) based transistor with multiple p-GaN blocksTEXAS INSTRUMENTS INC·Filed 2019·Granted Jun 29, 2021·0 cites·16 claims
- 2159US2025336744A1Semiconductor devices with oxidized layer segments in device regionsTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 2258US10707324B2Group IIIA-N HEMT with a tunnel diode in the gate stackTEXAS INSTRUMENTS INC·Filed 2019·Granted Jul 7, 2020·0 cites·21 claims
- 2357US2016254363A1Gallium nitride power devicesTRANSPHORM INC·Filed 2016·Application pending·0 cites
- 2457US2025120157A1Semiconductor device with slanted field plateTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 2555US2025107131A1Gate structure of semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 2653US10381456B2Group IIIA-N HEMT with a tunnel diode in the gate stackTEXAS INSTRUMENTS INC·Filed 2017·Granted Aug 13, 2019·0 cites·20 claims
- 2752US2010038814A1Method for Manufacturing Interior Panel of Motor VehicleHYUNDAI MOTOR CO LTD·Filed 2009·Application pending·0 cites
- 2850US8753101B2Apparatus for molding a crash pad for a vehicleSUH CHANG SOO·Filed 2012·Granted Jun 17, 2014·0 cites·6 claims
- 2950US2022399328A1High-voltage depletion-mode current source, transistor, and fabrication methodsTEXAS INSTRUMENTS INC·Filed 2021·Application pending·0 cites
- 3050US2024055488A1High band-gap devices with a doped high band-gap gate electrode extensionTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 3149US2023134698A1Apparatus and method to control threshold voltage and gate leakage current for gan-based semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2021·Application pending·0 cites
- 3249US2024047529A1Gan devices with modified heterojunction structure and methods of making thereofTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 3347US11302785B2Method for testing a high voltage transistor with a field plateTEXAS INSTRUMENTS INC·Filed 2019·Granted Apr 12, 2022·0 cites·20 claims
- 3447US2023101543A1Gallium-nitride device field-plate systemTEXAS INSTRUMENTS INC·Filed 2021·Application pending·0 cites
- 3546US2009085065A1Method to fabricate iii-n semiconductor devices on the n-face of layers which are grown in the iii-face direction using wafer bonding and substrate removalUNIV CALIFORNIA·Filed 2008·Application pending·0 cites
- 3645US2022130988A1Electronic device with enhancement mode gallium nitride transistor, and method of making sameTEXAS INSTRUMENTS INC·Filed 2020·Application pending·0 cites
- 3740US2009072269A1Gallium nitride diodes and integrated componentsSUH CHANG SOO·Filed 2007·Application pending·0 cites
- 3839US2008308813A1High breakdown enhancement mode gallium nitride based high electron mobility transistors with integrated slant field plateSUH CHANG SOO·Filed 2007·Application pending·0 cites
- 3936US2013313561A1Group iii-nitride transistor with charge-inducing layerSUH CHANG SOO·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →