Inventor · disambiguated record
Chun Lin Tsai
Also filed as: TSAI CHUN-LIN
140 granted patents·22 pending applications·376 citations·filing 2002–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD114TAIWAN SEMICONDUCTOR MFG21SU RU-YI10CHENG CHIH-CHANG3THEI KONG-BENG3
Top patents by PatentIndex Score
162 records- 0197US11854909B2Semiconductor structure and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0297US11404557B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
- 0397US9379191B2High electron mobility transistor including an isolation regionHSU CHUN-WEI·Filed 2011·Granted Jun 28, 2016·27 cites·20 claims
- 0496US11824109B2Integration of p-channel and n-channel E-FET III-V devices with optimization of device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 21, 2023·2 cites·20 claims
- 0596US9722065B1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·13 cites·20 claims
- 0695US10050621B2Low static current semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 14, 2018·12 cites·20 claims
- 0795US9793389B1Apparatus and method of fabrication for GaN/Si transistors isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 17, 2017·16 cites·19 claims
- 0894US12278272B2Source leakage current suppression by source surrounding gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 15, 2025·2 cites·20 claims
- 0994US11521915B2Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·3 cites·20 claims
- 1094US10050117B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·6 cites·20 claims
- 1193US10284195B2Low static current semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 7, 2019·8 cites·20 claims
- 1293US9111905B2High electron mobility transistor and method of forming the sameYao fu-wei·Filed 2012·Granted Aug 18, 2015·12 cites·20 claims
- 1393US8895993B2Low gate-leakage structure and method for gallium nitride enhancement mode transistorKALNITSKY ALEXANDER·Filed 2011·Granted Nov 25, 2014·15 cites·11 claims
- 1492US9373619B2High voltage resistor with high voltage junction terminationSU RU-YI·Filed 2011·Granted Jun 21, 2016·11 cites·20 claims
- 1592US9190535B2Bootstrap MOS for high voltage applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 17, 2015·12 cites·20 claims
- 1692US8624322B1High voltage device with a parallel resistorSU RU-YI·Filed 2012·Granted Jan 7, 2014·15 cites·20 claims
- 1792US8389348B2Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronicsTHEI KONG-BENG·Filed 2010·Granted Mar 5, 2013·13 cites·19 claims
- 1892US8159029B2High voltage device having reduced on-state resistanceSU RU-YI·Filed 2008·Granted Apr 17, 2012·21 cites·20 claims
- 1991US10535730B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·8 cites·20 claims
- 2091US10269949B2Semiconductor structure, HEMT structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·4 cites·20 claims
- 2191US9673323B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 6, 2017·6 cites·20 claims
- 2290US10790375B2High electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·3 cites·20 claims
- 2390US9812562B1Semiconductor structure, HEMT structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·4 cites·20 claims
- 2490US9680009B2High voltage semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 13, 2017·8 cites·20 claims
- 2590US8507920B2Semiconductor structure and method of forming the sameCHEN PO-CHIH·Filed 2011·Granted Aug 13, 2013·12 cites·20 claims
- 2688US10319644B2Method for manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 11, 2019·3 cites·20 claims
- 2788US9704968B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 11, 2017·3 cites·17 claims
- 2888US8629513B2HV interconnection solution using floating conductorsSU RU-YI·Filed 2011·Granted Jan 14, 2014·10 cites·14 claims
- 2988US8598679B2Stacked and tunable power fuseCHENG CHIH-CHANG·Filed 2010·Granted Dec 3, 2013·8 cites·20 claims
- 3087US12230690B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 3187US11195945B2Cap structure coupled to source to reduce saturation current in HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·3 cites·20 claims
- 3287US11145713B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·4 cites·20 claims
- 3387US10741665B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 11, 2020·2 cites·20 claims
- 3487US9508807B2Method of forming high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 29, 2016·3 cites·20 claims
- 3587US8704279B2Embedded JFETs for high voltage applicationsYEH JEN-HAO·Filed 2012·Granted Apr 22, 2014·8 cites·20 claims
- 3687US8587073B2High voltage resistorCHENG CHIH-CHANG·Filed 2010·Granted Nov 19, 2013·8 cites·20 claims
- 3787US2025338539A1Cap structure coupled to source to reduce saturation current in hemt deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3886US12363938B2Cap structure coupled to source to reduce saturation current in HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 3986US9627275B1Hybrid semiconductor structure on a common substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 18, 2017·3 cites·19 claims
- 4086US8575694B2Insulated gate bipolar transistor structure having low substrate leakageHUO KER HSIAO·Filed 2012·Granted Nov 5, 2013·6 cites·19 claims
- 4185US11522077B2Integration of p-channel and n-channel E-FET III-V devices with optimization of device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·1 cites·20 claims
- 4285US11410991B2Series resistor over drain region in high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 9, 2022·1 cites·20 claims
- 4385US10727329B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·2 cites·20 claims
- 4485US9343542B2Method for fabricating enhancement mode transistorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 17, 2016·5 cites·19 claims
- 4585US8969913B2Insulated gate bipolar transistor structure having low substrate leakageTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 3, 2015·5 cites·21 claims
- 4685US8697505B2Method of forming a semiconductor structureCHEN PO-CHIH·Filed 2011·Granted Apr 15, 2014·6 cites·20 claims
- 4784US11631741B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 18, 2023·1 cites·19 claims
- 4883US12507456B2Electrode structure for vertical group III-V deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 23, 2025·0 cites·20 claims
- 4983US12107156B2Semiconductor structure, HEMT structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 1, 2024·0 cites·20 claims
- 5083US8803232B2High voltage and ultra-high voltage semiconductor devices with increased breakdown voltagesHUO KER HSIAO·Filed 2011·Granted Aug 12, 2014·6 cites·18 claims
Showing the top 50 of 162 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →