Inventor · disambiguated record
Chien-Te Tu
Also filed as: TU CHIEN-TE
8 granted patents·13 pending applications·5 citations·filing 2020–2025
77Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD21
Top patents by PatentIndex Score
21 records- 0194US11776998B2Gate-all-around deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·2 cites·20 claims
- 0293US11233120B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·3 cites·20 claims
- 0385US2025366199A1Device with alternate complementary channels and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0481US2025366200A1Vertically stacked transistors and fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0580US12211897B2Gate-all-around transistor with strained channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 0679US2025072100A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0778US12170227B2Stacked semiconductor device with nanostructure channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 0877US2024387545A1Device with alternate complementary channels and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0976US2025331234A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1074US12349425B2Fin field effect transistors (FINFET) device including a plurality of recessed regions alternating with unrecessed regions in channel stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 1170US11955384B2Stacked semiconductor device with nanostructure channels and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 9, 2024·0 cites·20 claims
- 1269US12389635B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
- 1367US2023154923A1Device with alternate complementary channels and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1466US2024072054A1Vertically stacked transistors and fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1563US11908892B2Semiconductor device and formation methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
- 1658US2025176254A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1758US2025248113A1Integrated circuit device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1857US2025081604A1Three dimensional integrated circuit and fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1956US2025359242A1Semiconductor device with backside viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2052US2023395693A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2149US2025056841A1Integrated circuit device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →