Inventor · disambiguated record
Chenchen Jacob Wang
Also filed as: WANG CHENCHEN · WANG CHENCHEN JACOB
58 granted patents·15 pending applications·134 citations·filing 2010–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD42GLOBALFOUNDRIES SG PTE LTD15GLOBALFOUNDRIES INC4REJUKON BIOPHARM INC4UNIV CITY HONG KONG2
Top patents by PatentIndex Score
73 records- 0199US11404091B2Memory array word line routingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·17 cites·20 claims
- 0298US11864393B2Memory device, integrated circuit device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 2, 2024·2 cites·20 claims
- 0398US11581368B2Memory device, integrated circuit device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 14, 2023·3 cites·19 claims
- 0496US12002534B2Memory array word line routingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·2 cites·20 claims
- 0596US11355551B2Multi-level magnetic tunnel junction NOR device with wrap-around gate electrodes and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·3 cites·20 claims
- 0696US9660183B2Integration of spintronic devices with memory deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted May 23, 2017·18 cites·20 claims
- 0792US11991887B2Three-dimensional memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 21, 2024·2 cites·20 claims
- 0892US11970517B2Compositions and methods for dissolving protein aggregatesREJUKON BIOPHARM INC·Filed 2022·Granted Apr 30, 2024·2 cites·15 claims
- 0992US10147714B2Method, apparatus, and system for two-dimensional power rail to enable scaling of a standard cellGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 4, 2018·9 cites·20 claims
- 1092US9727685B2Method, apparatus, and system for improved standard cell design and routing for improving standard cell routabilityGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 8, 2017·10 cites·19 claims
- 1191US12391100B1Window rain guard for vehicleWANG CHENCHEN·Filed 2024·Granted Aug 19, 2025·2 cites·10 claims
- 1291US11903189B2Three-dimensional memory and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 13, 2024·2 cites·20 claims
- 1391US9679809B1Method of forming self aligned continuity blocks for mandrel and non-mandrel interconnect linesGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 13, 2017·8 cites·15 claims
- 1490US11527542B2System-on-chip with ferroelectric random access memory and tunable capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·2 cites·20 claims
- 1589US11217629B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·2 cites·20 claims
- 1689US8754370B1Sheathless interface for coupling capillary electrophoresis with mass spectrometryWANG CHENCHEN·Filed 2013·Granted Jun 17, 2014·11 cites·22 claims
- 1788US10134459B2MRAM with metal-insulator-transition materialGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Nov 20, 2018·5 cites·20 claims
- 1886US10381339B1Integrated circuits with memory cell test circuits and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Aug 13, 2019·7 cites·18 claims
- 1986US10366917B2Methods of patterning variable width metallization linesGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 30, 2019·5 cites·20 claims
- 2085US10516096B2Magnetic random access memory structures, integrated circuits, and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Dec 24, 2019·2 cites·18 claims
- 2185US10128309B2Storage layer for magnetic memory with high thermal stabilityGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Nov 13, 2018·4 cites·20 claims
- 2284US12250829B2Memory device, and integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 11, 2025·0 cites·20 claims
- 2384US12193242B2Multi-level magnetic tunnel junction nor device with wrap-around gate electrodes and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
- 2483US2025318114A1Three-dimensional memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2582US12363894B2Method for fabricating three-dimensional memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 2682US11183504B2Structures for testing nanoscale devices including ferroelectric capacitors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 23, 2021·1 cites·20 claims
- 2781US12501626B2Magnetic device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 16, 2025·0 cites·20 claims
- 2881US12295145B2Memory device and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 6, 2025·0 cites·20 claims
- 2981US12165970B2Semiconductor memory structure and interconnect structure of semiconductor memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 3081US11501812B2Semiconductor devices including ferroelectric memory and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·1 cites·20 claims
- 3181US2025062223A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3280US12243573B2Semiconductor devices including ferroelectric memory and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 3380US11177267B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 16, 2021·1 cites·20 claims
- 3479US12245436B2Device structure including field effect transistors and ferroelectric capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 3579US11864392B2Multi-level magnetic tunnel junction NOR device with wrap-around gate electrodes and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 3679US2025234558A1Memory Device and Methods of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3778US2024274160A1Memory Array Word Line RoutingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3876US12435109B2Compositions and methods for dissolving protein aggregatesREJUKON BIOPHARM INC·Filed 2024·Granted Oct 7, 2025·0 cites·4 claims
- 3976US11727976B2Semiconductor devices including ferroelectric memory and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 4074US9666640B2High thermal budget magnetic memoryGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted May 30, 2017·2 cites·20 claims
- 4174US2025318440A1Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4274US2024365553A1Three-Dimensional Memory Device with Ferroelectric MaterialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4372US12207478B2Memory device and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 21, 2025·0 cites·20 claims
- 4472US11729994B2Structures for testing nanoscale devices including ferroelectric capacitors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 4572US10374154B1Methods of shielding an embedded MRAM array on an integrated circuit product comprising CMOS based transistorsGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Aug 6, 2019·1 cites·16 claims
- 4671US12419197B2Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 16, 2025·0 cites·20 claims
- 4770US12101939B2Three-dimensional memory device with ferroelectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 24, 2024·0 cites·20 claims
- 4870US2023397442A1Three dimensional semiconductor device with memory stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4969US12022664B2Magnetic device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 25, 2024·0 cites·20 claims
- 5069US11837536B2Semiconductor memory structure and interconnect structure of semiconductor memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 5, 2023·0 cites·20 claims
Showing the top 50 of 73 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →