Inventor · disambiguated record
Chen-Jun Wu
Also filed as: WU CHEN-JUN
12 granted patents·10 pending applications·7 citations·filing 2014–2025
83Inventor score
Top patents by PatentIndex Score
22 records- 0192US11723199B2Protective liner layers in 3D memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·2 cites·20 claims
- 0285US2025294771A1High selectivity isolation structure for improving effectiveness of 3d memory fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0384US12419054B2Three-dimensional memory array with local line selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 16, 2025·0 cites·20 claims
- 0481US12349362B2High selectivity isolation structure for improving effectiveness of 3D memory fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 0578US12035534B2Three-dimensional memory array with local line selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 0677US2025301652A1Memory cell array with increased source bias voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0774US12342539B2Protective liner layers in 3D memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 24, 2025·0 cites·20 claims
- 0872US9263143B2Three dimensional memory device and data erase method thereofMACRONIX INT CO LTD·Filed 2014·Granted Feb 16, 2016·4 cites·14 claims
- 0971US2025069648A1Programming and reading circuit for dynamic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1069US11723210B2High selectivity isolation structure for improving effectiveness of 3D memory fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 1169US11672123B2Three-dimensional memory array with local line selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 1267US12336180B2Memory cell array with increased source bias voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 1366US12176022B2Programming and reading circuit for dynamic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·0 cites·19 claims
- 1463US12048164B2Memory array and operation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 23, 2024·0 cites·20 claims
- 1563US2025322886A1Memory device and operating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1662US2025220920A1Semiconductor memory cell structure including a vertical channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1762US2025318106A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1862US2025220881A1Semiconductor memory cell structure including a vertical channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1961US2025240940A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2058US2025231863A1Compute-in-memory circuits and methods for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2156US10381094B23D memory with staged-level multibit programmingMACRONIX INT CO LTD·Filed 2016·Granted Aug 13, 2019·1 cites·13 claims
- 2255US2025014627A1Thyristor memory cell, thyristor memory array, and method for fabricating a thyristor memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →