Inventor · disambiguated record
Chung-Wei Wu
Also filed as: WU CHUNG-WEI
50 granted patents·29 pending applications·63 citations·filing 2001–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD63CHIUN MAI COMMUNICATION SYSTEMS INC5LITE ON TECHNOLOGY CORP4ASUSTEK COMP INC3NATIONAL SUN YAT SEN UNIVERSITY1
Top patents by PatentIndex Score
79 records- 0196US11557659B2Gate all around transistor device and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 17, 2023·6 cites·20 claims
- 0296US11392040B2System and method for performing extreme ultraviolet photolithography processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 19, 2022·4 cites·20 claims
- 0395US11569348B2Semiconductor devices and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·4 cites·20 claims
- 0494US11768437B2System and method for performing extreme ultraviolet photolithography processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 26, 2023·2 cites·20 claims
- 0594US11527622B2Effective work function tuning via silicide induced interface dipole modulation for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·3 cites·20 claims
- 0693US11990522B2Effective work function tuning via silicide induced interface dipole modulation for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·2 cites·20 claims
- 0792US11929409B2Semiconductor device with improved source and drain contact area and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·1 cites·20 claims
- 0889US11264270B2Air-replaced spacer for self-aligned contact schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·2 cites·20 claims
- 0986US12218214B2Source/drain silicide for multigate device performance and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 4, 2025·1 cites·20 claims
- 1086US2025124960A1Semiconductor memory devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1185US12317526B2Multi-gate devices and fabricating the same with etch rate modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 1285US11489063B2Method of manufacturing a source/drain feature in a multi-gate semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·1 cites·20 claims
- 1385US11476342B1Semiconductor device with improved source and drain contact area and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 18, 2022·1 cites·20 claims
- 1485US11469332B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 11, 2022·2 cites·20 claims
- 1585US2025365938A1Back-end-of-line memory devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1684US2025324719A1Source/drain silicide for multigate device performance and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1783US12300749B2Source/drain features with improved strain propertiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 1883US2025287633A1Multi-gate devices and fabricating the same with etch rate modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1982US12382691B2Effective work function tuning via silicide induced interface dipole modulation for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 2082US12190931B2Semiconductor memory devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
- 2182US11037925B2Structure and method of integrated circuit having decouple capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·2 cites·20 claims
- 2281US12199170B2Method of manufacturing a multi-gate device having a semiconductor seed layer embedded in an isolation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 2381US2025301711A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2481US2025275191A1Source/drain features with improved strain propertiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2580US12396240B2Source/drain silicide for multigate device performance and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·20 claims
- 2680US12009408B2Multi-gate devices having a semiconductor layer between an inner spacer and an epitaxial featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 2779US2024395808A1Semiconductor device structure incorporating air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2878US12310029B2Semiconductor memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
- 2978US12131496B2Method and system for object identificationCHIUN MAI COMMUNICATION SYSTEMS INC·Filed 2022·Granted Oct 29, 2024·1 cites·18 claims
- 3078US2024339355A1Air-Replaced Spacer for Self-Aligned Contact SchemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3177US12125848B2Semiconductor device structure incorporating air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 3276US11949001B2Multi-gate devices and fabricating the same with etch rate modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 3376US2024186388A1Semiconductor device with improved source and drain contact area and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3476US2025331269A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3576US2025151305A1Multi-gate devices and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3675US12349418B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 3775US12040222B2Air-replaced spacer for self-aligned contact schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 3875US12034044B2Semiconductor devices and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·19 claims
- 3975US2025311263A1Gate All Around Transistor Device and Fabrication Methods ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4075US2025311227A1Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4174US2024379803A1Field effect transistor with merged epitaxy backside cut and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4273US12174545B2System and method for performing extreme ultraviolet photolithography processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 4373USD888700SMobile phoneASUSTEK COMP INC·Filed 2018·Granted Jun 30, 2020·15 cites·1 claims
- 4473US2022367612A1Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4572US12237414B2Source/drain features with improved strain propertiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 25, 2025·0 cites·20 claims
- 4672US2024113173A1Semiconductor structures and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4772US2025151283A1Semiconductor memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4870US11716857B2Semiconductor memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·0 cites·20 claims
- 4970US11626400B2Semiconductor device structure incorporating air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·0 cites·20 claims
- 5070US11508807B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
Showing the top 50 of 79 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →