Inventor · disambiguated record

Cheng-Ta Wu

Also filed as: WU CHENG-TA

112 granted patents·10 pending applications·280 citations·filing 2001–2025

99Inventor score

Technology areasH10P H10W H10F H01L H10D

Files withTAIWAN SEMICONDUCTOR MFG CO LTD100 TAIWAN SEMICONDUCTOR MFG9 LAI CHIH-YU3 PROMOS TECHNOLOGIES INC3 WANG CHUNG CHIEN2

Top patents by PatentIndex Score

122 records

0198US10157780B2Method of forming a device having a doping layer and device formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·26 cites·20 claims
0297US11289330B2Semiconductor-on-insulator (SOI) substrate and method for formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·5 cites·20 claims
0396US11705328B2Semiconductor-on-insulator (SOI) substrate and method for formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 18, 2023·3 cites·20 claims
0496US8816358B1Plasmonic nanostructures for organic image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 26, 2014·30 cites·20 claims
0595US11495489B2Method for forming a semiconductor-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·3 cites·20 claims
0694US10553474B1Method for forming a semiconductor-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 4, 2020·6 cites·20 claims
0794US9728646B2Flat STI surface for gate oxide uniformity in Fin FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·7 cites·19 claims
0894US9577102B1Method of forming gate and finFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·18 cites·19 claims
0993US9659981B2Backside illuminated image sensor with negatively charged layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 23, 2017·9 cites·20 claims
1093US8628990B1Image device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jan 14, 2014·9 cites·19 claims
1193US8048813B2Method of reducing delamination in the fabrication of small-pitch devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Nov 1, 2011·20 cites·19 claims
1292US9040385B2Mechanisms for cleaning substrate surface for hybrid bondingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 26, 2015·24 cites·20 claims
1391US9406675B1FinFET structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 2, 2016·7 cites·20 claims
1491US2025357115A1Semiconductor-on-insulator (soi) substrate and method for formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1590US11984477B2RFSOI semiconductor structures including a nitrogen-doped charge-trapping layer and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·3 cites·20 claims
1690US10468486B2SOI substrate, semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·5 cites·20 claims
1790US10192988B2Flat STI surface for gate oxide uniformity in Fin FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 29, 2019·4 cites·20 claims
1890US8853811B2Image sensor trench isolation with conformal dopingLAI CHIH-YU·Filed 2011·Granted Oct 7, 2014·10 cites·20 claims
1989US11855159B2Method for forming thin semiconductor-on-insulator (SOI) substratesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
2089US10157770B2Semiconductor device having isolation structures with different thickness and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·4 cites·20 claims
2189US10026838B2Fin-type field effect transistor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 17, 2018·11 cites·16 claims
2289US10020401B2Methods for straining a transistor gate through interlayer dielectric (ILD) doping schemesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 10, 2018·4 cites·20 claims
2388US10109756B2Backside illuminated photo-sensitive device with gradated buffer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 23, 2018·3 cites·20 claims
2487US12456618B2Semiconductor-on-insulator (SOI) substrate and method for formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 28, 2025·0 cites·20 claims
2587US12183804B2RF switch device with a sidewall spacer having a low dielectric constantTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 31, 2024·0 cites·20 claims
2687US9425343B2Mechanisms for forming image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 23, 2016·4 cites·22 claims
2786US11551979B2Method for manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 10, 2023·1 cites·20 claims
2886US10756222B2Backside illuminated photo-sensitive device with gradated buffer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·1 cites·19 claims
2986US8778807B2Method of reducing delamination in the fabrication of small-pitch devicesLAI CHIH-YU·Filed 2011·Granted Jul 15, 2014·7 cites·23 claims
3086US2025287637A1Flat sti surface for gate oxide uniformity in fin fet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3186US2025081570A1Rf switch device with a sidewall spacer having a low dielectric constantTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3285US11955496B2Back-side deep trench isolation structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 9, 2024·1 cites·20 claims
3385US9190441B2Image sensor trench isolation with conformal dopingTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 17, 2015·5 cites·20 claims
3484US12364048B2Conductive contact for ion through-substrate viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
3584US12211877B2Back-side deep trench isolation structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
3684US12165911B2Method for forming a semiconductor-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
3784US2025359206A1Rfsoi semiconductor structures including a nitrogen-doped charge-trapping layer and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3883US10186542B1Patterning for substrate fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 22, 2019·3 cites·20 claims
3983US10163647B2Method for forming deep trench structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·3 cites·20 claims
4083US2025318312A1Conductive contact for ion through-substrate viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4183US2024379712A1Back-side deep trench isolation structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4282US11594597B2Selective polysilicon growth for deep trench polysilicon isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 28, 2023·2 cites·20 claims
4382US10727097B2Mechanisms for cleaning substrate surface for hybrid bondingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 28, 2020·3 cites·20 claims
4481US12396222B2RFSOI semiconductor structures including a nitrogen-doped charge-trapping layer and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
4581US12062539B2Semiconductor-on-insulator (SOI) substrate and method for formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 13, 2024·0 cites·20 claims
4681US10923503B2Semiconductor-on-insulator (SOI) substrate comprising a trap-rich layer with small grain sizesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 16, 2021·3 cites·20 claims
4781US10868050B2Backside illuminated image sensor with negatively charged layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 15, 2020·1 cites·20 claims
4881US10818558B2Semiconductor structure having trench and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 27, 2020·2 cites·20 claims
4980US12119267B2Method for manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 15, 2024·0 cites·20 claims
5080US11830764B2Method for forming a semiconductor-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims

Showing the top 50 of 122 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →