Inventor · disambiguated record
Chih-I Wu
Also filed as: WU CHIH-I
18 granted patents·12 pending applications·235 citations·filing 2001–2025
92Inventor score
Top patents by PatentIndex Score
30 records- 0196US6605549B2Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectricsINTEL CORP·Filed 2001·Granted Aug 12, 2003·162 cites·16 claims
- 0288US7714145B22-2′-disubstituted 9,9′-spirobifluorene-base triaryldiamines and their applicationTSAI MING-HAN·Filed 2007·Granted May 11, 2010·19 cites·8 claims
- 0386US11232982B2Deposition system and method using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·3 cites·20 claims
- 0485US9941380B2Graphene transistor and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 10, 2018·6 cites·20 claims
- 0585US7456490B2Sealing porous dielectrics with silane coupling reagentsINTEL CORP·Filed 2006·Granted Nov 25, 2008·9 cites·7 claims
- 0679US2025323036A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0778US12446279B2Semiconductor device having 2D channel layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 0878US12362170B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 0975US7122481B2Sealing porous dielectrics with silane coupling reagentsINTEL CORP·Filed 2003·Granted Oct 17, 2006·15 cites·27 claims
- 1074US11362180B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 14, 2022·1 cites·20 claims
- 1173US11855150B2Semiconductor device having 2D channel layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 1273US6743712B2Method of making a semiconductor device by forming a masking layer with a tapered etch profileINTEL CORP·Filed 2002·Granted Jun 1, 2004·16 cites·8 claims
- 1371US2025331229A1Semiconductor device with improved source/drain contact and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1467US12062540B2Integrated circuit device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
- 1566US12191143B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 1663US12376336B2Semiconductor device with improved source/drain contact and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
- 1758US2025203968A1Semiconductor device with two-dimensional materials and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1856US11491648B2Robotic systems and corresponding methods for engaging server back-plane connectorsSYNOPSYS INC·Filed 2020·Granted Nov 8, 2022·0 cites·20 claims
- 1953US11171460B1Tools for coupling and decoupling a cable connectorSYNOPSYS INC·Filed 2020·Granted Nov 9, 2021·0 cites·20 claims
- 2053US7268075B2Method to reduce the copper line roughness for increased electrical conductivity of narrow interconnects (<100nm)INTEL CORP·Filed 2003·Granted Sep 11, 2007·4 cites·7 claims
- 2153US2024373767A1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2249US2025015141A1Semiconductor device and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2349US2025006639A1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2446US11406022B2Substrate having through via and method of fabricating the sameIND TECH RES INST·Filed 2020·Granted Aug 2, 2022·0 cites·12 claims
- 2542US2007262704A1Carbazole-based Compounds and Their ApplicationTSAI MING-HAN·Filed 2007·Application pending·0 cites
- 2642US2005087873A1Method and structure for selective surface passivationFiled 2004·Application pending·0 cites
- 2740US2004126482A1Method and structure for selective surface passivationFiled 2002·Application pending·0 cites
- 2838US2005147762A1Method to fabricate amorphous electroless metal layersFiled 2003·Application pending·0 cites
- 2932US2003205823A1Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectricsLEU JIHPERNG·Filed 2003·Application pending·0 cites
- 3031US2005224980A1Interconnect adapted for reduced electron scatteringLEU JIHPERNG·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →