Inventor · disambiguated record
Chen-Bau Wu
Also filed as: WU CHEN-BAU
22 granted patents·6 pending applications·310 citations·filing 1997–2025
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG15TAIWAN SEMICONDUCTOR MFG CO LTD8CHOU HSUEH-LIANG2TAIWAN SEMICONDUCTOR MFG CO IN1WU CHEN-BAU1
Top patents by PatentIndex Score
28 records- 0196US7221021B2Method of forming high voltage devices with retrograde wellTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 22, 2007·120 cites·13 claims
- 0291US7372104B2High voltage CMOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 13, 2008·22 cites·8 claims
- 0387US11195945B2Cap structure coupled to source to reduce saturation current in HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·3 cites·20 claims
- 0487US2025338539A1Cap structure coupled to source to reduce saturation current in hemt deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0586US12363938B2Cap structure coupled to source to reduce saturation current in HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 0682US12100757B2Cap structure coupled to source to reduce saturation current in HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 0782US8114745B2High voltage CMOS devicesWU CHEN-BAU·Filed 2010·Granted Feb 14, 2012·8 cites·24 claims
- 0882US7719064B2High voltage CMOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted May 18, 2010·8 cites·16 claims
- 0981US11139290B2High voltage cascode HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 5, 2021·3 cites·20 claims
- 1078US7129559B2High voltage semiconductor device utilizing a deep trench structureTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 31, 2006·20 cites·9 claims
- 1177US6265752B1Method of forming a HVNMOS with an N+ buried layer combined with N well and a structure of the sameTAIWAN SEMICONDUCTOR MFG CO IN·Filed 1999·Granted Jul 24, 2001·51 cites·7 claims
- 1277US2025349701A1Wafer-on-wafer cascode hemt deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1375US11742419B2Cap structure coupled to source to reduce saturation current in HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 1475US7482662B2High voltage semiconductor device utilizing a deep trench structureTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 27, 2009·5 cites·44 claims
- 1575US7151296B2High voltage lateral diffused MOSFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Dec 19, 2006·19 cites·27 claims
- 1672US8049295B2Coupling well structure for improving HVMOS performanceTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Nov 1, 2011·2 cites·11 claims
- 1772US7279767B2Semiconductor structure with high-voltage sustaining capability and fabrication method of the sameTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Oct 9, 2007·5 cites·11 claims
- 1869US12451419B2Wafer-on-wafer cascode HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·19 claims
- 1968US7888767B2Structures of high-voltage MOS devices with improved electrical performanceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Feb 15, 2011·4 cites·18 claims
- 2066US5899738AMethod for making metal plugs in stacked vias for multilevel interconnections and contact openings while retaining the alignment marks without requiring extra masking stepsTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted May 4, 1999·39 cites·17 claims
- 2155US9111957B2Coupling well structure for improving HVMOS performanceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 18, 2015·0 cites·22 claims
- 2255US7521342B2Semiconductor structure with high-voltage sustaining capability and fabrication method of the sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Apr 21, 2009·1 cites·9 claims
- 2354US7816214B2Coupling well structure for improving HVMOS performanceTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Oct 19, 2010·0 cites·13 claims
- 2450US8592923B2Coupling well structure for improving HVMOS performanceCHOU HSUEH-LIANG·Filed 2011·Granted Nov 26, 2013·0 cites·20 claims
- 2548US2008211026A1Coupling well structure for improving HVMOS performanceCHOU HSUEH-LIANG·Filed 2006·Application pending·0 cites
- 2638US2007221999A1Semiconductor devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 2737US2006108641A1Device having a laterally graded well structure and a method for its manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2004·Application pending·0 cites
- 2835US2005112824A1Method of forming gate oxide layers with multiple thicknesses on substrateFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →