Inventor · disambiguated record
Chao-I Wu
Also filed as: WU CHAO-I
154 granted patents·36 pending applications·1,232 citations·filing 1993–2025
99Inventor score
Files withMACRONIX INT CO LTD104TAIWAN SEMICONDUCTOR MFG CO LTD63WU CHAO-I11JAN SPORTS PRODUCTS CORP3HSU TZU-HSUAN2
Top patents by PatentIndex Score
190 records- 0199US11502128B2Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·9 cites·20 claims
- 0298US11637126B2Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·6 cites·20 claims
- 0398US11616080B2Three-dimensional memory device with ferroelectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 28, 2023·4 cites·20 claims
- 0498US11411011B2Semiconductor structure having memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·5 cites·20 claims
- 0598US7190614B2Operation scheme for programming charge trapping non-volatile memoryMACRONIX INT CO LTD·Filed 2005·Granted Mar 13, 2007·149 cites·16 claims
- 0698US7151692B2Operation scheme for programming charge trapping non-volatile memoryMACRONIX INT CO LTD·Filed 2005·Granted Dec 19, 2006·154 cites·18 claims
- 0797US11980036B2Semiconductor structure having memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·2 cites·20 claims
- 0897US11956968B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 9, 2024·2 cites·16 claims
- 0997US11862219B2Memory cell and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 2, 2024·3 cites·20 claims
- 1097US11587950B2Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·3 cites·12 claims
- 1197US6937511B2Circuit and method for programming charge storage memory cellsMACRONIX INT CO LTD·Filed 2004·Granted Aug 30, 2005·143 cites·49 claims
- 1296US7266014B2Method of operating non-volatile memory deviceMACRONIX INT CO LTD·Filed 2005·Granted Sep 4, 2007·58 cites·16 claims
- 1396US7209390B2Operation scheme for spectrum shift in charge trapping non-volatile memoryMACRONIX INT CO LTD·Filed 2004·Granted Apr 24, 2007·111 cites·39 claims
- 1495US9558823B1Resistance drift recovery method for MLC PCMMACRONIX INT CO LTD·Filed 2015·Granted Jan 31, 2017·37 cites·22 claims
- 1593US11749370B2Method of testing a memory circuit and memory circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·3 cites·20 claims
- 1693US11672126B2Three-dimensional memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 6, 2023·2 cites·20 claims
- 1793US11568912B2Memory cell and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·3 cites·20 claims
- 1893US11444126B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 13, 2022·2 cites·20 claims
- 1993US8908426B2Cell sensing circuit for phase change memory and methods thereofMACRONIX INT CO LTD·Filed 2012·Granted Dec 9, 2014·19 cites·20 claims
- 2092US8363463B2Phase change memory having one or more non-constant doping profilesMACRONIX INT CO LTD·Filed 2010·Granted Jan 29, 2013·16 cites·10 claims
- 2191US8238149B2Methods and apparatus for reducing defect bits in phase change memorySHIH YEN-HAO·Filed 2010·Granted Aug 7, 2012·15 cites·20 claims
- 2290US9336879B2Multiple phase change materials in an integrated circuit for system on a chip applicationMACRONIX INT CO LTD·Filed 2015·Granted May 10, 2016·11 cites·8 claims
- 2390US8634235B2Phase change memory codingLUNG HSIANG-LAN·Filed 2010·Granted Jan 21, 2014·13 cites·22 claims
- 2489US12513909B2Semiconductor structure having memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 30, 2025·0 cites·20 claims
- 2589US12356876B2Memory device and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 2689US12106814B2Method of testing a memory circuit and memory circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·1 cites·20 claims
- 2789US7590005B2Program and erase methods with substrate transient hot carrier injections in a non-volatile memoryMACRONIX INT CO LTD·Filed 2007·Granted Sep 15, 2009·16 cites·26 claims
- 2889US7471568B2Multi-level cell memory structures with enlarged second bit operation windowMACRONIX INT CO LTD·Filed 2006·Granted Dec 30, 2008·17 cites·10 claims
- 2988US12513907B2Method of forming memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 30, 2025·0 cites·20 claims
- 3088US7492636B2Methods for conducting double-side-biasing operations of NAND memory arraysMACRONIX INT CO LTD·Filed 2007·Granted Feb 17, 2009·20 cites·18 claims
- 3188US7206225B2Method of dynamically controlling program verify levels in multilevel memory cellsMACRONIX INT CO LTD·Filed 2005·Granted Apr 17, 2007·19 cites·29 claims
- 3288US2025308569A1Hybrid memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3387US12167704B2Memory devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 3487US2025048942A1Memory devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3586US2025365970A1Semiconductor chipTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3685US12178053B2Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 24, 2024·0 cites·20 claims
- 3785US11309490B2Memory devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·1 cites·20 claims
- 3885US7763927B2Non-volatile memory device having a nitride-oxide dielectric layerMACRONIX INT CO LTD·Filed 2005·Granted Jul 27, 2010·10 cites·18 claims
- 3985US2025301926A1Memory device and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4085US2025063740A1Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4184US5322280ARacket handleJAN SPORTS PRODUCTS CORP·Filed 1993·Granted Jun 21, 1994·72 cites·3 claims
- 4284US2024334718A1Hybrid memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4384US2024331754A1Memory Array Including Dummy RegionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4482US12069871B2Three-dimensional memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 4582US7292478B2Non-volatile memory including charge-trapping layer, and operation and fabrication of the sameMACRONIX INT CO LTD·Filed 2005·Granted Nov 6, 2007·11 cites·3 claims
- 4681US11744165B2Memory devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·0 cites·20 claims
- 4781US7372732B2Pulse width converged method to control voltage threshold (Vt) distribution of a memory cellMACRONIX INT CO LTD·Filed 2005·Granted May 13, 2008·13 cites·10 claims
- 4881US2024357838A1Three-dimensional memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4981US2024373653A1Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5080US12201041B2Memory device comprising heater of different heat conducting materials and programming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
Showing the top 50 of 190 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →