Inventor · disambiguated record
Chongying Xu
Also filed as: XU CHONGYING
109 granted patents·44 pending applications·3,752 citations·filing 1998–2022
99Inventor score
Top patents by PatentIndex Score
153 records- 0199US7437060B2Delivery systems for efficient vaporization of precursor source materialADVANCED TECH MATERIALS·Filed 2005·Granted Oct 14, 2008·561 cites·20 claims
- 0299US6909839B2Delivery systems for efficient vaporization of precursor source materialADVANCED TECH MATERIALS·Filed 2003·Granted Jun 21, 2005·610 cites·21 claims
- 0398US9337054B2Precursors for silicon dioxide gap fillHUNKS WILLIAM·Filed 2008·Granted May 10, 2016·443 cites·20 claims
- 0498US8821640B2Solid precursor-based delivery of fluid utilizing controlled solids morphologyCLEARY JOHN M·Filed 2007·Granted Sep 2, 2014·536 cites·21 claims
- 0598US7838329B2Antimony and germanium complexes useful for CVD/ALD of metal thin filmsADVANCED TECH MATERIALS·Filed 2007·Granted Nov 23, 2010·55 cites·21 claims
- 0697US9537095B2Tellurium compounds useful for deposition of tellurium containing materialsENTEGRIS INC·Filed 2014·Granted Jan 3, 2017·14 cites·20 claims
- 0796US8796068B2Tellurium compounds useful for deposition of tellurium containing materialsADVANCED TECH MATERIALS·Filed 2013·Granted Aug 5, 2014·12 cites·10 claims
- 0896US7910765B2Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitrideADVANCED TECH MATERIALS·Filed 2010·Granted Mar 22, 2011·19 cites·20 claims
- 0996US7887883B2Composition and method for low temperature deposition of silicon-containing filmsADVANCED TECH MATERIALS·Filed 2010·Granted Feb 15, 2011·23 cites·8 claims
- 1096US7863203B2Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the sameADVANCED TECH MATERIALS·Filed 2008·Granted Jan 4, 2011·19 cites·16 claims
- 1196US7786320B2Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitrideADVANCED TECH MATERIALS·Filed 2009·Granted Aug 31, 2010·29 cites·7 claims
- 1296US7713346B2Composition and method for low temperature deposition of silicon-containing filmsADVANCED TECH MATERIALS·Filed 2008·Granted May 11, 2010·31 cites·8 claims
- 1395US10895010B2Solid precursor-based delivery of fluid utilizing controlled solids morphologyENTEGRIS INC·Filed 2016·Granted Jan 19, 2021·5 cites·18 claims
- 1495US8802882B2Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride filmsWANG ZIYUN·Filed 2010·Granted Aug 12, 2014·15 cites·20 claims
- 1595US8242032B2Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the sameWANG ZIYUN·Filed 2011·Granted Aug 14, 2012·7 cites·8 claims
- 1695US8008117B2Antimony and germanium complexes useful for CVD/ALD of metal thin filmsADVANCED TECH MATERIALS·Filed 2010·Granted Aug 30, 2011·14 cites·20 claims
- 1795US7005392B2Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using sameADVANCED TECH MATERIALS·Filed 2001·Granted Feb 28, 2006·71 cites·9 claims
- 1895US6869638B2Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using sameADVANCED TEHNOLOGY MATERIALS I·Filed 2001·Granted Mar 22, 2005·108 cites·46 claims
- 1994US8236097B2Composition and method for low temperature deposition of silicon-containing filmsWANG ZIYUN·Filed 2011·Granted Aug 7, 2012·13 cites·5 claims
- 2094US7531679B2Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitrideADVANCED TECH MATERIALS·Filed 2002·Granted May 12, 2009·55 cites·22 claims
- 2194US7285308B2Chemical vapor deposition of high conductivity, adherent thin films of rutheniumADVANCED TECH MATERIALS·Filed 2004·Granted Oct 23, 2007·45 cites·79 claims
- 2294US7241912B2Copper (I) compounds useful as deposition precursors of copper thin filmsADVANCED TECH MATERIALS·Filed 2005·Granted Jul 10, 2007·12 cites·10 claims
- 2394US7198815B2Tantalum amide complexes for depositing tantalum-containing films, and method of making sameADVANCED TECH MATERIALS·Filed 2005·Granted Apr 3, 2007·19 cites·8 claims
- 2493US9102693B2Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride filmsENTEGRIS INC·Filed 2014·Granted Aug 11, 2015·8 cites·20 claims
- 2593US8877549B2Low temperature deposition of phase change memory materialsADVANCED TECH MATERIALS·Filed 2014·Granted Nov 4, 2014·7 cites·19 claims
- 2693US8288198B2Low temperature deposition of phase change memory materialsROEDER JEFFREY F·Filed 2007·Granted Oct 16, 2012·11 cites·18 claims
- 2793US8268665B2Antimony and germanium complexes useful for CVD/ALD of metal thin filmsHUNKS WILLIAM·Filed 2011·Granted Sep 18, 2012·12 cites·20 claims
- 2893US7781605B2Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride filmsADVANCED TECH MATERIALS·Filed 2009·Granted Aug 24, 2010·14 cites·20 claims
- 2993US7371878B2Tantalum amide complexes for depositing tantalum-containing films, and method of making sameADVANCED TECH MATERIALS·Filed 2007·Granted May 13, 2008·14 cites·20 claims
- 3092US8709863B2Antimony and germanium complexes useful for CVD/ALD of metal thin filmsADVANCED TECH MATERIALS·Filed 2012·Granted Apr 29, 2014·9 cites·22 claims
- 3191US7371880B2Copper (I) compounds useful as deposition precursors of copper thin filmsADVANCED TECH MATERIALS·Filed 2007·Granted May 13, 2008·7 cites·31 claims
- 3291US7119052B2Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafersADVANCED TECH MATERIALS·Filed 2003·Granted Oct 10, 2006·46 cites·86 claims
- 3391US6440202B1Pyrazolate copper complexes, and MOCVD of copper using sameADVANCED TECH MATERIALS·Filed 2001·Granted Aug 27, 2002·22 cites·9 claims
- 3491US6331211B1Method and apparatus for forming low dielectric constant polymeric filmsADVANCED TECHNOLOGY MATERIAL I·Filed 2000·Granted Dec 18, 2001·32 cites·12 claims
- 3590US7166732B2Copper (I) compounds useful as deposition precursors of copper thin filmsADVANCED TECH MATERIALS·Filed 2004·Granted Jan 23, 2007·18 cites·37 claims
- 3690US6639080B2Pyrazolate copper complexes, and MOCVD of copper using sameADVANCED TECH MATERIALS·Filed 2002·Granted Oct 28, 2003·18 cites·10 claims
- 3789US7446217B2Composition and method for low temperature deposition of silicon-containing filmsADVANCED TECH MATERIALS·Filed 2003·Granted Nov 4, 2008·29 cites·31 claims
- 3889US7294528B2Supercritical fluid-assisted deposition of materials on semiconductor substratesADVANCED TECH MATERIALS·Filed 2005·Granted Nov 13, 2007·6 cites·91 claims
- 3989US7119418B2Supercritical fluid-assisted deposition of materials on semiconductor substratesADVANCED TECH MATERIALS·Filed 2003·Granted Oct 10, 2006·31 cites·114 claims
- 4088US8093140B2Amorphous Ge/Te deposition processCHEN PHILIP S H·Filed 2008·Granted Jan 10, 2012·11 cites·20 claims
- 4188US7638074B2Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric filmsADVANCED TECH MATERIALS·Filed 2007·Granted Dec 29, 2009·9 cites·19 claims
- 4288US7108771B2Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin filmsADVANCED TECH MATERIALS·Filed 2001·Granted Sep 19, 2006·24 cites·17 claims
- 4388US6960675B2Tantalum amide complexes for depositing tantalum-containing films, and method of making sameADVANCED TECH MATERIALS·Filed 2003·Granted Nov 1, 2005·28 cites·36 claims
- 4487US6740586B1Vapor delivery system for solid precursors and method of using sameADVANCED TECH MATERIALS·Filed 2002·Granted May 25, 2004·36 cites·49 claims
- 4586US8206784B2Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric filmsXU CHONGYING·Filed 2009·Granted Jun 26, 2012·8 cites·23 claims
- 4686US7160815B2Removal of MEMS sacrificial layers using supercritical fluid/chemical formulationsADVANCED TECH MATERIALS·Filed 2004·Granted Jan 9, 2007·28 cites·32 claims
- 4786US6735978B1Treatment of supercritical fluid utilized in semiconductor manufacturing applicationsADVANCED TECH MATERIALS·Filed 2003·Granted May 18, 2004·31 cites·94 claims
- 4885US8034407B2Chemical vapor deposition of high conductivity, adherent thin films of rutheniumADVANCED TECH MATERIALS·Filed 2007·Granted Oct 11, 2011·4 cites·16 claims
- 4985US7223352B2Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removalADVANCED TECH MATERIALS·Filed 2002·Granted May 29, 2007·26 cites·61 claims
- 5085US7030168B2Supercritical fluid-assisted deposition of materials on semiconductor substratesADVANCED TECH MATERIALS·Filed 2002·Granted Apr 18, 2006·20 cites·58 claims
Showing the top 50 of 153 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →