Inventor · disambiguated record
Chun Yan
Also filed as: YAN CHUN · Yan chun-yan
20 granted patents·6 pending applications·60 citations·filing 2003–2019
91Inventor score
Top patents by PatentIndex Score
26 records- 0190US10043667B2Integrated method for wafer outgassing reductionAPPLIED MATERIALS INC·Filed 2017·Granted Aug 7, 2018·3 cites·19 claims
- 0286US10205002B2Method of epitaxial growth shape control for CMOS applicationsAPPLIED MATERIALS INC·Filed 2017·Granted Feb 12, 2019·4 cites·19 claims
- 0385US9905412B2Method and solution for cleaning InGaAs (or III-V) substratesAPPLIED MATERIALS INC·Filed 2016·Granted Feb 27, 2018·2 cites·20 claims
- 0483US6841484B2Method of fabricating a magneto-resistive random access memory (MRAM) deviceFiled 2003·Granted Jan 11, 2005·29 cites·15 claims
- 0582US10002759B2Method of forming structures with V shaped bottom on silicon substrateAPPLIED MATERIALS INC·Filed 2017·Granted Jun 19, 2018·3 cites·19 claims
- 0679US10115607B2Method and apparatus for wafer outgassing controlAPPLIED MATERIALS INC·Filed 2016·Granted Oct 30, 2018·2 cites·20 claims
- 0777US10236190B2Method for wafer outgassing controlAPPLIED MATERIALS INC·Filed 2017·Granted Mar 19, 2019·2 cites·17 claims
- 0873US9653291B2Method for removing native oxide and residue from a III-V group containing surfaceAPPLIED MATERIALS INC·Filed 2014·Granted May 16, 2017·2 cites·2 claims
- 0971US10243063B2Method of uniform channel formationAPPLIED MATERIALS INC·Filed 2017·Granted Mar 26, 2019·1 cites·15 claims
- 1068US6784107B1Method for planarizing a copper interconnect structureFiled 2003·Granted Aug 31, 2004·12 cites·21 claims
- 1166US10147596B2Methods and solutions for cleaning INGAAS (or III-V) substratesAPPLIED MATERIALS INC·Filed 2018·Granted Dec 4, 2018·0 cites·20 claims
- 1258US10504717B2Integrated system and method for source/drain engineeringAPPLIED MATERIALS INC·Filed 2017·Granted Dec 10, 2019·0 cites·16 claims
- 1357US2019035623A1Integrated system and method for source/drain engineeringAPPLIED MATERIALS INC·Filed 2018·Application pending·0 cites
- 1456US11256057B2Lens module with electromagnetic prothction and electronic device using the sameTRIPLE WIN TECH SHENZHEN CO LTD·Filed 2019·Granted Feb 22, 2022·0 cites·16 claims
- 1554US2019172728A1Method and apparatus for wafer outgassing controlAPPLIED MATERIALS INC·Filed 2018·Application pending·0 cites
- 1651US10438796B2Method for removing native oxide and residue from a III-V group containing surfaceAPPLIED MATERIALS INC·Filed 2017·Granted Oct 8, 2019·0 cites·20 claims
- 1749US9852903B2System and method in indium-gallium-arsenide channel height control for sub 7nm FinFETAPPLIED MATERIALS INC·Filed 2017·Granted Dec 26, 2017·0 cites·20 claims
- 1849US2018073162A1Degassing chamber for arsenic related processesAPPLIED MATERIALS INC·Filed 2017·Application pending·0 cites
- 1948US9653282B2Silicon-containing substrate cleaning procedureAPPLIED MATERIALS INC·Filed 2014·Granted May 16, 2017·0 cites·17 claims
- 2047US9472416B2Methods of surface interface engineeringAPPLIED MATERIALS INC·Filed 2014·Granted Oct 18, 2016·0 cites·16 claims
- 2142US10332739B2UV radiation system and method for arsenic outgassing control in sub 7nm CMOS fabricationAPPLIED MATERIALS INC·Filed 2017·Granted Jun 25, 2019·0 cites·20 claims
- 2242US9805914B2Methods for removing contamination from surfaces in substrate processing systemsAPPLIED MATERIALS INC·Filed 2015·Granted Oct 31, 2017·0 cites·8 claims
- 2340US9865706B2Integrated process and structure to form III-V channel for sub-7nm CMOS devicesAPPLIED MATERIALS INC·Filed 2016·Granted Jan 9, 2018·0 cites·20 claims
- 2439US2018019121A1Method and material for cmos contact and barrier layerAPPLIED MATERIALS INC·Filed 2017·Application pending·0 cites
- 2539US2018211836A1Template formation for fully relaxed sige growthAPPLIED MATERIALS INC·Filed 2017·Application pending·0 cites
- 2637US2018033659A1Gas purge system and method for outgassing controlAPPLIED MATERIALS INC·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →