Inventor · disambiguated record
Chansyun David Yang
Also filed as: YANG CHANSYUN · YANG CHANSYUN DAVID
44 granted patents·18 pending applications·39 citations·filing 2010–2025
96Inventor score
Top patents by PatentIndex Score
62 records- 0198US11335606B2Power rails for stacked semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 17, 2022·8 cites·20 claims
- 0297US11960210B2Laser interference fringe control for higher EUV light source and EUV throughputTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 16, 2024·2 cites·20 claims
- 0396US11903188B2Memory devices, semiconductor devices, and methods of operating a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
- 0496US11592749B2Laser interference fringe control for higher EUV light source and EUV throughputTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·2 cites·20 claims
- 0595US11437371B2Field effect transistors with negative capacitance layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·3 cites·20 claims
- 0692US11276604B1Radical-activated etching of metal oxidesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 15, 2022·2 cites·20 claims
- 0791US11150559B2Laser interference fringe control for higher EUV light source and EUV throughputTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 19, 2021·2 cites·20 claims
- 0889US11594616B2Field effect transistor with negative capacitance dielectric structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·1 cites·20 claims
- 0989US2025331214A1Semiconductor device structure with inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1089US2025329544A1Plasma-assisted etching of metal oxidesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1188US2025331092A1Extreme ultraviolet radiation source, method of generating extreme ultraviolet radiation, and method of manufacturing integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1287US12389619B2Semiconductor device structure with inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 1387US11094796B2Transistor spacer structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·3 cites·20 claims
- 1486US11502199B2Independent control of stacked semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·1 cites·20 claims
- 1585US12389518B2Method of manufacturing integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 1685US12317535B2Independent control of stacked semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 1785US11282711B2Plasma-assisted etching of metal oxidesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·1 cites·20 claims
- 1885US11114547B2Field effect transistor with negative capacitance dieletric structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 7, 2021·2 cites·20 claims
- 1984US12363978B2Field effect transistor with negative capacitance dielectric structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 2084US2025323085A1Radical-activated etching of metal oxidesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2183US11973129B2Semiconductor device structure with inner spacer layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 30, 2024·0 cites·20 claims
- 2283US11791397B2Field effect transistor with negative capacitance dielectric structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 17, 2023·0 cites·20 claims
- 2383US8658541B2Method of controlling trench microloading using plasma pulsingLEE GENE H·Filed 2010·Granted Feb 25, 2014·10 cites·15 claims
- 2482US12501701B2Power rails for stacked semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 16, 2025·0 cites·20 claims
- 2582US2025261397A1Independent Control Of Stacked Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2681US2025364264A1Method for selectively removing predetermined part of selected element in semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2780US12211918B2Nanostructured channel regions for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 2880US2025366002A1Semiconductor device with tunable threshold voltage and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2979US12027605B2Field effect transistors with negative capacitance layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 2, 2024·0 cites·20 claims
- 3078US11916145B2Independent control of stacked semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 3178US2024387673A1Nanostructured channel regions for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3277US12336252B2Inner spacer formation in multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 3377US11854910B2Power rails for stacked semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 3477US11605728B2Semiconductor device structure with inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 3576US12387968B2Radical-activated etching of metal oxidesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
- 3675US12284804B2Memory devices, semiconductor devices, and methods of operations a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 22, 2025·0 cites·20 claims
- 3775US11769818B2Field effect transistors with negative capacitance layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 26, 2023·0 cites·20 claims
- 3875US2024395637A1Methods for real time etch process compensation controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3975US2024387139A1Voltage control for etching systemsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4074US12400869B2Method for selectively removing predetermined part of selected element in semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 4174US2022216064A1Plasma-assisted etching of metal oxidesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4272US11830928B2Inner spacer formation in multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·0 cites·20 claims
- 4372US2024290836A1Gate Structures For Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4471US11869954B2Nanostructured channel regions for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 9, 2024·0 cites·20 claims
- 4570US11830931B2Transistor spacer structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·0 cites·20 claims
- 4670US11707803B2Apparatus and method for directional etch with micron zone beam and angle controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 25, 2023·0 cites·20 claims
- 4769US12513912B2Method for fabricating an integrated circuit comprising devices on opposing sides of a substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 30, 2025·0 cites·20 claims
- 4868US12426292B2Semiconductor device with tunable threshold voltage and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 4966US12218015B2Interferometer systems and methods for real time etch process compensation controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 4, 2025·0 cites·20 claims
- 5065US12027583B2Gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 2, 2024·0 cites·20 claims
Showing the top 50 of 62 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →