Inventor · disambiguated record
Chun-Chen Yeh
Also filed as: YEH CHUN-CHEN
370 granted patents·43 pending applications·2,106 citations·filing 2002–2024
99Inventor score
Top patents by PatentIndex Score
413 records- 0199US11201153B2Stacked field effect transistor with wrap-around contactsIBM·Filed 2020·Granted Dec 14, 2021·9 cites·15 claims
- 0299US11069684B1Stacked field effect transistors with reduced coupling effectIBM·Filed 2020·Granted Jul 20, 2021·49 cites·20 claims
- 0399US9923055B1Inner spacer for nanosheet transistorsIBM·Filed 2016·Granted Mar 20, 2018·49 cites·19 claims
- 0499US9741716B1Forming vertical and horizontal field effect transistors on the same substrateIBM·Filed 2016·Granted Aug 22, 2017·43 cites·17 claims
- 0599US9716170B1Reduced capacitance in vertical transistors by preventing excessive overlap between the gate and the source/drainIBM·Filed 2016·Granted Jul 25, 2017·46 cites·11 claims
- 0699US9711618B1Fabrication of vertical field effect transistor structure with controlled gate lengthIBM·Filed 2016·Granted Jul 18, 2017·43 cites·13 claims
- 0799US8679902B1Stacked nanowire field effect transistorIBM·Filed 2012·Granted Mar 25, 2014·70 cites·18 claims
- 0898US11164793B2Reduced source/drain coupling for CFETIBM·Filed 2020·Granted Nov 2, 2021·6 cites·15 claims
- 0998US10103247B1Vertical transistor having buried contact, and contacts using work function metals and silicidesGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 16, 2018·28 cites·20 claims
- 1098US10014370B1Air gap adjacent a bottom source/drain region of vertical transistor deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 3, 2018·24 cites·14 claims
- 1198US9935018B1Methods of forming vertical transistor devices with different effective gate lengthsGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 3, 2018·33 cites·20 claims
- 1298US9929246B1Forming air-gap spacer for vertical field effect transistorIBM·Filed 2017·Granted Mar 27, 2018·24 cites·20 claims
- 1398US9793395B1Vertical vacuum channel transistorIBM·Filed 2016·Granted Oct 17, 2017·24 cites·6 claims
- 1498US9748352B2Multi-channel gate-all-around FETST MICROELECTRONICS INC·Filed 2015·Granted Aug 29, 2017·28 cites·20 claims
- 1598US9608069B1Self aligned epitaxial based punch through controlIBM·Filed 2016·Granted Mar 28, 2017·20 cites·20 claims
- 1698US9502518B2Multi-channel gate-all-around FETST MICROELECTRONICS INC·Filed 2014·Granted Nov 22, 2016·46 cites·18 claims
- 1798US9202920B1Methods for forming vertical and sharp junctions in finFET structuresST MICROELECTRONICS INC·Filed 2014·Granted Dec 1, 2015·42 cites·31 claims
- 1898US8951870B2Forming strained and relaxed silicon and silicon germanium fins on the same waferIBM·Filed 2013·Granted Feb 10, 2015·39 cites·10 claims
- 1998US8445334B1SOI FinFET with recessed merged Fins and liner for enhanced stress couplingBASKER VEERARAGHAVAN S·Filed 2011·Granted May 21, 2013·41 cites·6 claims
- 2097US11348999B2Nanosheet semiconductor devices with sigma shaped inner spacerIBM·Filed 2020·Granted May 31, 2022·4 cites·17 claims
- 2197US10840329B1Nanosheet transistor having improved bottom isolationIBM·Filed 2019·Granted Nov 17, 2020·18 cites·17 claims
- 2297US10269983B2Stacked nanosheet field-effect transistor with air gap spacersGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 23, 2019·20 cites·20 claims
- 2397US10249538B1Method of forming vertical field effect transistors with different gate lengths and a resulting structureGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 2, 2019·22 cites·19 claims
- 2497US10002939B1Nanosheet transistors having thin and thick gate dielectric materialIBM·Filed 2017·Granted Jun 19, 2018·22 cites·14 claims
- 2597US9960271B1Method of forming vertical field effect transistors with different threshold voltages and the resulting integrated circuit structureGLOBALFOUNDRIES INC·Filed 2017·Granted May 1, 2018·19 cites·15 claims
- 2697US9870952B1Formation of VFET and finFETIBM·Filed 2017·Granted Jan 16, 2018·17 cites·19 claims
- 2797US9812443B1Forming vertical transistors and metal-insulator-metal capacitors on the same chipIBM·Filed 2017·Granted Nov 7, 2017·17 cites·14 claims
- 2897US9455317B1Nanowire semiconductor device including lateral-etch barrier regionIBM·Filed 2015·Granted Sep 27, 2016·14 cites·9 claims
- 2997US9391200B2FinFETs having strained channels, and methods of fabricating finFETs having strained channelsST MICROELECTRONICS INC·Filed 2014·Granted Jul 12, 2016·27 cites·21 claims
- 3097US9082852B1LDMOS FinFET device using a long channel region and method of manufactureST MICROELECTRONICS INC·Filed 2014·Granted Jul 14, 2015·32 cites·30 claims
- 3197US8815670B2Preventing Fin erosion and limiting EPI overburden in FinFET structures by composite hardmaskIBM·Filed 2013·Granted Aug 26, 2014·29 cites·13 claims
- 3296US11869893B2Stacked field effect transistor with wrap-around contactsIBM·Filed 2021·Granted Jan 9, 2024·2 cites·8 claims
- 3396US10096692B1Vertical field effect transistor with reduced parasitic capacitanceIBM·Filed 2017·Granted Oct 9, 2018·11 cites·19 claims
- 3496US10037919B1Integrated single-gated vertical field effect transistor (VFET) and independent double-gated VFETGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 31, 2018·14 cites·20 claims
- 3596US9972682B2Low resistance source drain contact formationIBM·Filed 2016·Granted May 15, 2018·13 cites·16 claims
- 3696US9917152B1Nanosheet transistors on bulk materialIBM·Filed 2017·Granted Mar 13, 2018·11 cites·1 claims
- 3796US9806153B1Controlling channel length for vertical FETsIBM·Filed 2017·Granted Oct 31, 2017·13 cites·14 claims
- 3896US9685537B1Gate length control for vertical transistors and integration with replacement gate flowGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 20, 2017·15 cites·8 claims
- 3996US9190466B2Independent gate vertical FinFET structureIBM·Filed 2013·Granted Nov 17, 2015·19 cites·8 claims
- 4096US9105742B1Dual epitaxial process including spacer adjustmentIBM·Filed 2014·Granted Aug 11, 2015·23 cites·16 claims
- 4196US8841178B1Strained silicon nFET and silicon germanium pFET on same waferIBM·Filed 2013·Granted Sep 23, 2014·27 cites·5 claims
- 4296US8815668B2Preventing FIN erosion and limiting Epi overburden in FinFET structures by composite hardmaskIBM·Filed 2012·Granted Aug 26, 2014·21 cites·20 claims
- 4396US8513131B2Fin field effect transistor with variable channel thickness for threshold voltage tuningCAI MING·Filed 2011·Granted Aug 20, 2013·39 cites·14 claims
- 4496US8455313B1Method for fabricating finFET with merged fins and vertical silicideBASKER VEERARAGHAVAN S·Filed 2012·Granted Jun 4, 2013·28 cites·7 claims
- 4595US9953977B1FinFET semiconductor deviceIBM·Filed 2017·Granted Apr 24, 2018·13 cites·3 claims
- 4695US9680020B2Increased contact area for FinFETsGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 13, 2017·10 cites·16 claims
- 4795US9472407B2Replacement metal gate FinFETIBM·Filed 2015·Granted Oct 18, 2016·9 cites·4 claims
- 4895US9431521B1Stress memorization technique for strain coupling enhancement in bulk finFET deviceIBM·Filed 2015·Granted Aug 30, 2016·7 cites·9 claims
- 4995US9324830B2Self-aligned contact process enabled by low temperatureIBM·Filed 2014·Granted Apr 26, 2016·12 cites·19 claims
- 5095US9202919B1FinFETs and techniques for controlling source and drain junction profiles in finFETsST MICROELECTRONICS INC·Filed 2014·Granted Dec 1, 2015·21 cites·26 claims
Showing the top 50 of 413 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →