Inventor · disambiguated record
Chih Chieh Yeh
Also filed as: YEH CHIH C · YEH CHIH CHIEH
223 granted patents·30 pending applications·4,615 citations·filing 2002–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD149MACRONIX INT CO LTD65TAIWAN SEMICONDUCTOR MFG12LEE TSUNG-LIN8YEH CHIH CHIEH7
Top patents by PatentIndex Score
253 records- 0199US9853101B2Strained nanowire CMOS device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 26, 2017·151 cites·20 claims
- 0299US9660033B1Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 23, 2017·58 cites·20 claims
- 0399US9627540B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·32 cites·20 claims
- 0499US9583399B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 28, 2017·50 cites·20 claims
- 0599US9564489B2Multiple gate field-effect transistors having oxygen-scavenged gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·297 cites·20 claims
- 0698US10290546B2Threshold voltage adjustment for a gate-all-around semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 14, 2019·131 cites·20 claims
- 0798US10134640B1Semiconductor device structure with semiconductor wireTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·42 cites·20 claims
- 0898US9245805B2Germanium FinFETs with metal gates and stressorsYEH CHIH CHIEH·Filed 2010·Granted Jan 26, 2016·536 cites·19 claims
- 0998US9171929B2Strained structure of semiconductor device and method of making the strained structureLEE TSUNG-LIN·Filed 2012·Granted Oct 27, 2015·593 cites·20 claims
- 1098US8847293B2Gate structure for semiconductor deviceLEE TSUNG-LIN·Filed 2012·Granted Sep 30, 2014·518 cites·17 claims
- 1198US8264032B2Accumulation type FinFET, circuits and fabrication method thereofYEH CHIH CHIEH·Filed 2010·Granted Sep 11, 2012·73 cites·20 claims
- 1297US10374059B2Structure and formation method of semiconductor device structure with nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 6, 2019·14 cites·20 claims
- 1397US10037912B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 31, 2018·15 cites·20 claims
- 1497US8941153B2FinFETs with different fin heightsLEE TSUNG-LIN·Filed 2010·Granted Jan 27, 2015·46 cites·18 claims
- 1597US8796759B2Fin-like field effect transistor (FinFET) device and method of manufacturing samePERNG TSU-HSIU·Filed 2010·Granted Aug 5, 2014·235 cites·19 claims
- 1697US8623728B2Method for forming high germanium concentration SiGe stressorCHANG CHIH-HAO·Filed 2010·Granted Jan 7, 2014·38 cites·20 claims
- 1797US8373238B2FinFETs with multiple Fin heightsTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 12, 2013·39 cites·17 claims
- 1897US8264021B2Finfets and methods for forming the sameLAI LI-SHYUE·Filed 2010·Granted Sep 11, 2012·79 cites·15 claims
- 1997US7158411B2Integrated code and data flash memoryMACRONIX INT CO LTD·Filed 2004·Granted Jan 2, 2007·116 cites·61 claims
- 2097US6690601B2Nonvolatile semiconductor memory cell with electron-trapping erase state and methods for operating the sameMACRONIX INT CO LTD·Filed 2002·Granted Feb 10, 2004·162 cites·35 claims
- 2196US11289591B1Bipolar junction deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·4 cites·20 claims
- 2296US10672667B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 2, 2020·9 cites·20 claims
- 2396US10297508B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 21, 2019·13 cites·20 claims
- 2496US10134843B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·9 cites·20 claims
- 2596US9647071B2FINFET structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·11 cites·20 claims
- 2696US7209386B2Charge trapping non-volatile memory and method for gate-by-gate erase for sameMACRONIX INT CO LTD·Filed 2005·Granted Apr 24, 2007·57 cites·20 claims
- 2796US7120059B2Memory array including multiple-gate charge trapping non-volatile cellsMACRONIX INT CO LTD·Filed 2005·Granted Oct 10, 2006·53 cites·33 claims
- 2895US9450094B1Semiconductor process and fin-shaped field effect transistorUNITED MICROELECTRONICS CORP·Filed 2015·Granted Sep 20, 2016·12 cites·18 claims
- 2995US8748993B2FinFETs with multiple fin heightsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 10, 2014·18 cites·20 claims
- 3095US8673709B2FinFETs with multiple fin heightsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 18, 2014·17 cites·20 claims
- 3195US6657894B2Apparatus and method for programming virtual ground nonvolatile memory cell array without disturbing adjacent cellsMACRONIX INT CO LTD·Filed 2002·Granted Dec 2, 2003·108 cites·9 claims
- 3294US10727298B2Strained nanowire CMOS device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·5 cites·20 claims
- 3394US10002969B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 19, 2018·7 cites·19 claims
- 3494US7106625B2Charge trapping non-volatile memory with two trapping locations per gate, and method for operating sameMACRONIX INTERNAT CO TD·Filed 2005·Granted Sep 12, 2006·63 cites·25 claims
- 3593US12199169B2Structure and formation method of semiconductor device structure with nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 14, 2025·2 cites·20 claims
- 3693US11056400B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 6, 2021·5 cites·20 claims
- 3793US10867841B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·5 cites·20 claims
- 3893US10522625B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·5 cites·20 claims
- 3993US9660082B2Integrated circuit transistor structure with high germanium concentration SiGe stressorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 23, 2017·11 cites·16 claims
- 4093US9627531B1Field-effect transistor with dual vertical gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 18, 2017·8 cites·20 claims
- 4193US9263342B2Semiconductor device having a strained regionLEE TSUNG-LIN·Filed 2012·Granted Feb 16, 2016·13 cites·16 claims
- 4293US9112052B2Voids in STI regions for forming bulk FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 18, 2015·10 cites·20 claims
- 4393US9087725B2FinFETs with different fin height and EPI height settingTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 21, 2015·11 cites·20 claims
- 4492US9466678B2Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Oct 11, 2016·13 cites·17 claims
- 4592US6996011B2NAND-type non-volatile memory cell and method for operating sameMACRONIX INT CO LTD·Filed 2004·Granted Feb 7, 2006·62 cites·36 claims
- 4692US6721204B1Memory erase method and device with optimal data retention for nonvolatile memoryMACRONIX INT CO LTD·Filed 2003·Granted Apr 13, 2004·66 cites·40 claims
- 4792US6614694B1Erase scheme for non-volatile memoryMACRONIX INT CO LTD·Filed 2002·Granted Sep 2, 2003·67 cites·20 claims
- 4891US10978422B2Vertical transistor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 13, 2021·2 cites·20 claims
- 4991US9741829B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 22, 2017·5 cites·19 claims
- 5091US8896055B2Accumulation type FinFET, circuits and fabrication method thereofYEH CHIH CHIEH·Filed 2012·Granted Nov 25, 2014·11 cites·20 claims
Showing the top 50 of 253 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →