Inventor · disambiguated record
Chun Wing Yeung
Also filed as: YEUNG CHUN W · Yeung Chun Wing
73 granted patents·21 pending applications·374 citations·filing 2015–2024
99Inventor score
Top patents by PatentIndex Score
94 records- 0198US10032867B1Forming bottom isolation layer for nanosheet technologyIBM·Filed 2017·Granted Jul 24, 2018·38 cites·10 claims
- 0298US9842914B1Nanosheet FET with wrap-around inner spacerIBM·Filed 2016·Granted Dec 12, 2017·34 cites·20 claims
- 0398US9805989B1Sacrificial cap for forming semiconductor contactIBM·Filed 2016·Granted Oct 31, 2017·29 cites·20 claims
- 0497US9935195B1Reduced resistance source and drain extensions in vertical field effect transistorsIBM·Filed 2017·Granted Apr 3, 2018·16 cites·19 claims
- 0597US9831324B1Self-aligned inner-spacer replacement process using implantationIBM·Filed 2016·Granted Nov 28, 2017·14 cites·11 claims
- 0696US10297667B1Fin field-effect transistor for input/output device integrated with nanosheet field-effect transistorIBM·Filed 2017·Granted May 21, 2019·19 cites·16 claims
- 0796US10008417B1Vertical transport fin field effect transistors having different channel lengthsIBM·Filed 2017·Granted Jun 26, 2018·11 cites·15 claims
- 0896US9673293B1Airgap spacersIBM·Filed 2016·Granted Jun 6, 2017·10 cites·11 claims
- 0995US10483166B1Vertically stacked transistorsIBM·Filed 2018·Granted Nov 19, 2019·24 cites·16 claims
- 1095US10453824B1Structure and method to form nanosheet devices with bottom isolationIBM·Filed 2018·Granted Oct 22, 2019·30 cites·20 claims
- 1195US10243060B2Uniform low-k inner spacer module in gate-all-around (GAA) transistorsIBM·Filed 2017·Granted Mar 26, 2019·13 cites·20 claims
- 1293US10373912B2Replacement metal gate processes for vertical transport field-effect transistorIBM·Filed 2018·Granted Aug 6, 2019·10 cites·17 claims
- 1392US10896851B2Vertically stacked transistorsIBM·Filed 2019·Granted Jan 19, 2021·9 cites·9 claims
- 1492US10546957B2Nanosheet FET including all-around source/drain contactIBM·Filed 2018·Granted Jan 28, 2020·7 cites·16 claims
- 1592US10170588B1Method of forming vertical transport fin field effect transistor with high-K dielectric feature uniformityIBM·Filed 2017·Granted Jan 1, 2019·7 cites·15 claims
- 1692US9947767B1Self-limited inner spacer formation for gate-all-around field effect transistorsIBM·Filed 2017·Granted Apr 17, 2018·7 cites·9 claims
- 1792US9881937B2Preventing strained fin relaxationIBM·Filed 2017·Granted Jan 30, 2018·6 cites·10 claims
- 1891US10396177B2Prevention of extension narrowing in nanosheet field effect transistorsIBM·Filed 2017·Granted Aug 27, 2019·5 cites·13 claims
- 1990US10361269B2Forming bottom isolation layer for nanosheet technologyIBM·Filed 2018·Granted Jul 23, 2019·5 cites·18 claims
- 2090US10079233B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2016·Granted Sep 18, 2018·5 cites·16 claims
- 2190US10020400B2Airgap spacersIBM·Filed 2017·Granted Jul 10, 2018·4 cites·20 claims
- 2289US9576979B2Preventing strained fin relaxation by sealing fin endsIBM·Filed 2015·Granted Feb 21, 2017·5 cites·9 claims
- 2388US10431503B2Sacrificial cap for forming semiconductor contactIBM·Filed 2017·Granted Oct 1, 2019·4 cites·18 claims
- 2488US10431502B1Maskless epitaxial growth of phosphorus-doped Si and boron-doped SiGe (Ge) for advanced source/drain contactIBM·Filed 2018·Granted Oct 1, 2019·5 cites·14 claims
- 2587US10658299B2Replacement metal gate processes for vertical transport field-effect transistorIBM·Filed 2019·Granted May 19, 2020·4 cites·20 claims
- 2687US10615278B2Preventing strained fin relaxationIBM·Filed 2017·Granted Apr 7, 2020·4 cites·3 claims
- 2787US10475905B2Techniques for vertical FET gate length controlIBM·Filed 2018·Granted Nov 12, 2019·4 cites·18 claims
- 2887US10374034B1Undercut control in isotropic wet etch processesIBM·Filed 2018·Granted Aug 6, 2019·5 cites·20 claims
- 2986US11164870B2Stacked upper fin and lower fin transistor with separate gateIBM·Filed 2019·Granted Nov 2, 2021·4 cites·6 claims
- 3086US10896816B2Silicon residue removal in nanosheet transistorsIBM·Filed 2017·Granted Jan 19, 2021·4 cites·20 claims
- 3185US10804410B2Bottom channel isolation in nanosheet transistorsIBM·Filed 2018·Granted Oct 13, 2020·3 cites·5 claims
- 3285US10522636B2Fin field-effect transistor for input/output device integrated with nanosheet field-effect transistorIBM·Filed 2019·Granted Dec 31, 2019·3 cites·20 claims
- 3384US10269957B2Reduced resistance source and drain extensions in vertical field effect transistorsIBM·Filed 2017·Granted Apr 23, 2019·2 cites·20 claims
- 3482US11011643B2Nanosheet FET including encapsulated all-around source/drain contactIBM·Filed 2019·Granted May 18, 2021·2 cites·20 claims
- 3582US10541239B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2018·Granted Jan 21, 2020·2 cites·20 claims
- 3682US10256321B2Semiconductor device including enhanced low-k spacerIBM·Filed 2016·Granted Apr 9, 2019·3 cites·20 claims
- 3781US11990530B2Replacement-channel fabrication of III-V nanosheet devicesIBM·Filed 2023·Granted May 21, 2024·0 cites·20 claims
- 3879US10930793B2Bottom channel isolation in nanosheet transistorsIBM·Filed 2017·Granted Feb 23, 2021·2 cites·7 claims
- 3978US10930567B2Maskless epitaxial growth of phosphorus-doped Si and boron-doped SiGe (Ge) for advanced source/drain contactIBM·Filed 2019·Granted Feb 23, 2021·2 cites·18 claims
- 4078US10756205B1Double gate two-dimensional material transistorIBM·Filed 2019·Granted Aug 25, 2020·2 cites·11 claims
- 4178US10541318B2Prevention of extension narrowing in nanosheet field effect transistorsIBM·Filed 2017·Granted Jan 21, 2020·1 cites·17 claims
- 4277US10418288B2Techniques for forming different gate length vertical transistors with dual gate oxideIBM·Filed 2018·Granted Sep 17, 2019·2 cites·16 claims
- 4376US10068804B2Methods, apparatus and system for providing adjustable fin height for a FinFET deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 4, 2018·2 cites·20 claims
- 4475US10622489B2Vertical tunnel FET with self-aligned heterojunctionIBM·Filed 2017·Granted Apr 14, 2020·2 cites·18 claims
- 4574US10297663B2Gate fill utilizing replacement spacerIBM·Filed 2017·Granted May 21, 2019·1 cites·20 claims
- 4673US11742409B2Replacement-channel fabrication of III-V nanosheet devicesIBM·Filed 2021·Granted Aug 29, 2023·0 cites·11 claims
- 4773US10991797B2Self-aligned two-dimensional material transistorsIBM·Filed 2019·Granted Apr 27, 2021·1 cites·14 claims
- 4873US10355103B2Long channels for transistorsIBM·Filed 2017·Granted Jul 16, 2019·1 cites·14 claims
- 4971US10529850B2Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profileIBM·Filed 2018·Granted Jan 7, 2020·1 cites·5 claims
- 5070US11569347B2Self-aligned two-dimensional material transistorsIBM·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
Showing the top 50 of 94 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →