Inventor · disambiguated record
Chang Bum Yong
Also filed as: YONG CHANG BUM
8 granted patents·3 pending applications·16 citations·filing 2011–2024
80Inventor score
Top patents by PatentIndex Score
11 records- 0193US11854886B2Methods of TSV formation for advanced packagingAPPLIED MATERIALS INC·Filed 2022·Granted Dec 26, 2023·2 cites·6 claims
- 0289US11404318B2Methods of forming through-silicon vias in substrates for advanced packagingAPPLIED MATERIALS INC·Filed 2020·Granted Aug 2, 2022·2 cites·20 claims
- 0389US8742591B2Semiconductor device and method of forming insulating layer in notches around conductive TSV for stress reliefCHOI WON KYOUNG·Filed 2011·Granted Jun 3, 2014·10 cites·22 claims
- 0480US12374586B2Methods of TSV formation for advanced packagingAPPLIED MATERIALS INC·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 0560US2025364349A1Dummy features for dissipating heat in packages including advanced semiconductor chipsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 0658US9728415B2Semiconductor device and method of wafer thinning involving edge trimming and CMPSTATS CHIPPAC LTD·Filed 2013·Granted Aug 8, 2017·1 cites·23 claims
- 0756US9281274B1Integrated circuit through-substrate via system with a buffer layer and method of manufacture thereofZHAO XING·Filed 2013·Granted Mar 8, 2016·1 cites·17 claims
- 0856US2024379411A1Embedding redistribution layer metal traces in a polymeric dielectricAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 0954US2025062129A1DIE BACKSIDE PROFILE for SEMICONDUCTOR DEVICESAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1052US9837336B2Semiconductor device and method of forming insulating layer in notches around conductive TSV for stress reliefSTATS CHIPPAC LTD·Filed 2014·Granted Dec 5, 2017·0 cites·22 claims
- 1149US8809191B2Semiconductor device and method of forming UBM structure on back surface of TSV semiconductor waferCHOI WON KYOUNG·Filed 2011·Granted Aug 19, 2014·0 cites·27 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →