Inventor · disambiguated record
Chong-Man Yun
Also filed as: YUN CHONG-MAN
15 granted patents·6 pending applications·370 citations·filing 1995–2011
93Inventor score
Files withFAIRCHILD KR SEMICONDUCTOR LTD8LEE JAE-GIL4SAMSUNG ELECTRONICS CO LTD4OH KWANG-HOON2YUN CHONG-MAN1
Top patents by PatentIndex Score
21 records- 0191US6433386B1Sense FET having a selectable sense current ratio and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Aug 13, 2002·159 cites·24 claims
- 0285US5891776AMethods of forming insulated-gate semiconductor devices using self-aligned trench sidewall diffusion techniquesSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Apr 6, 1999·73 cites·36 claims
- 0384US7868384B2High-voltage semiconductor device and method of fabricating the sameFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2007·Granted Jan 11, 2011·9 cites·42 claims
- 0484US7645659B2Power semiconductor device using silicon substrate as field stop layer and method of manufacturing the sameFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2005·Granted Jan 12, 2010·17 cites·9 claims
- 0575US6344676B1Power semiconductor device having low on-resistance and high breakdown voltageSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Feb 5, 2002·26 cites·14 claims
- 0674US6348716B1Horizontal MOS gate type semiconductor device including zener diode and manufacturing method thereofFAIRCHILD KR SEMICONDUCTOR LTD·Filed 1999·Granted Feb 19, 2002·36 cites·14 claims
- 0763US8084815B2Superjunction semiconductor deviceLEE JAE-GIL·Filed 2005·Granted Dec 27, 2011·3 cites·15 claims
- 0863US6518624B2Trench-gate power semiconductor device preventing latch-up and method for fabricating the sameFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2000·Granted Feb 11, 2003·13 cites·6 claims
- 0961US6664595B1Power MOSFET having low on-resistance and high ruggednessFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2000·Granted Dec 16, 2003·8 cites·11 claims
- 1060US6930356B2Power semiconductor device having high breakdown voltage, low on-resistance, and small switching loss and method of forming the sameFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2003·Granted Aug 16, 2005·8 cites·16 claims
- 1155US8269304B2MOS gate power semiconductor device with anode of protection diode connected to collector electrodeOH KWANG-HOON·Filed 2010·Granted Sep 18, 2012·2 cites·10 claims
- 1250US5728593APower insulated-gate transistor having three terminals and a manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Mar 17, 1998·14 cites·9 claims
- 1345US7276405B2Power semiconductor device having high breakdown voltage, low on-resistance and small switching loss and method of forming the sameFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2005·Granted Oct 2, 2007·0 cites·9 claims
- 1443US8716085B2Method of fabricating high-voltage semiconductor deviceLEE JAE-GIL·Filed 2011·Granted May 6, 2014·0 cites·26 claims
- 1542US2012161274A1Superjunction semiconductor deviceLEE JAE-GIL·Filed 2011·Application pending·0 cites
- 1641US6448588B2Insulated gate bipolar transistor having high breakdown voltage in reverse blocking modeFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2001·Granted Sep 10, 2002·2 cites·5 claims
- 1736US2007029597A1High-voltage semiconductor deviceLEE JAE-GIL·Filed 2006·Application pending·0 cites
- 1833US2004256659A1MOS-gated transistor with improved UIS capabilityFiled 2004·Application pending·0 cites
- 1933US2011169080A1Charge balance power device and manufacturing method thereofYUN CHONG-MAN·Filed 2010·Application pending·0 cites
- 2031US2003057478A1Mos-gated power semiconductor deviceFiled 2002·Application pending·0 cites
- 2127US2011049563A1Mos gate power semiconductor deviceOH KWANG-HOON·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →