Inventor · disambiguated record
Chiyu Zhu
Also filed as: Zhu chiyu
53 granted patents·21 pending applications·1,773 citations·filing 2015–2025
98Inventor score
Files withASM IP HOLDING BV74
Top patents by PatentIndex Score
74 records- 0199US9859151B1Selective film deposition method to form air gapsASM IP HOLDING BV·Filed 2016·Granted Jan 2, 2018·467 cites·19 claims
- 0298US10847361B2Selective deposition of aluminum and nitrogen containing materialASM IP HOLDING BV·Filed 2020·Granted Nov 24, 2020·16 cites·20 claims
- 0398US10734497B2Methods for forming a semiconductor device structure and related semiconductor device structuresASM IP HOLDING BV·Filed 2018·Granted Aug 4, 2020·279 cites·20 claims
- 0498US10283319B2Atomic layer etching processesASM IP HOLDING BV·Filed 2017·Granted May 7, 2019·18 cites·19 claims
- 0598US10273584B2Thermal atomic layer etching processesASM IP HOLDING BV·Filed 2017·Granted Apr 30, 2019·17 cites·28 claims
- 0698US10211308B2NbMC layersASM IP HOLDING BV·Filed 2015·Granted Feb 19, 2019·412 cites·15 claims
- 0798US10190213B2Deposition of metal boridesASM IP HOLDING BV·Filed 2016·Granted Jan 29, 2019·413 cites·20 claims
- 0897US12129545B2Precursor capsule, a vessel and a methodASM IP HOLDING BV·Filed 2021·Granted Oct 29, 2024·2 cites·22 claims
- 0997US11739427B2Thermal atomic layer etching processesASM IP HOLDING BV·Filed 2021·Granted Aug 29, 2023·2 cites·24 claims
- 1097US11581220B2Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structuresASM IP HOLDING BV·Filed 2021·Granted Feb 14, 2023·4 cites·20 claims
- 1197US10903113B2Selective deposition of aluminum and nitrogen containing materialASM IP HOLDING BV·Filed 2020·Granted Jan 26, 2021·16 cites·20 claims
- 1297US10280519B2Thermal atomic layer etching processesASM IP HOLDING BV·Filed 2017·Granted May 7, 2019·14 cites·20 claims
- 1396US11295980B2Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structuresASM IP HOLDING BV·Filed 2018·Granted Apr 5, 2022·14 cites·17 claims
- 1496US10566185B2Selective deposition of aluminum and nitrogen containing materialASM IP HOLDING BV·Filed 2015·Granted Feb 18, 2020·22 cites·26 claims
- 1596US10553482B2Selective deposition of aluminum and nitrogen containing materialASM IP HOLDING BV·Filed 2018·Granted Feb 4, 2020·18 cites·20 claims
- 1696US10121699B2Selective deposition of aluminum and nitrogen containing materialASM IP HOLDING BV·Filed 2017·Granted Nov 6, 2018·23 cites·21 claims
- 1794US10662533B2Thermal atomic layer etching processesASM IP HOLDING BV·Filed 2019·Granted May 26, 2020·3 cites·23 claims
- 1893US11739428B2Thermal atomic layer etching processesASM IP HOLDING BV·Filed 2021·Granted Aug 29, 2023·1 cites·27 claims
- 1991US11640899B2Atomic layer etching processesASM IP HOLDING BV·Filed 2021·Granted May 2, 2023·1 cites·19 claims
- 2090US12119228B2Deposition methodASM IP HOLDING BV·Filed 2022·Granted Oct 15, 2024·1 cites·20 claims
- 2190US11094582B2Selective deposition method to form air gapsASM IP HOLDING BV·Filed 2019·Granted Aug 17, 2021·3 cites·20 claims
- 2289US11114283B2Reactor, system including the reactor, and methods of manufacturing and using sameASM IP HOLDING BV·Filed 2018·Granted Sep 7, 2021·4 cites·15 claims
- 2389US10662534B2Thermal atomic layer etching processesASM IP HOLDING BV·Filed 2019·Granted May 26, 2020·1 cites·22 claims
- 2489US10002936B2Titanium aluminum and tantalum aluminum thin filmsASM IP HOLDING BV·Filed 2015·Granted Jun 19, 2018·4 cites·22 claims
- 2589US2025037970A1Atomic layer etching processesASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 2688US12320012B2Thermal atomic layer etching processesASM IP HOLDING BV·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 2788US10529563B2Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structuresASM IP HOLDING BV·Filed 2018·Granted Jan 7, 2020·3 cites·15 claims
- 2888US2025081588A1Methods for forming a semiconductor device structure and related semiconductor device structuresASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 2987US12312696B2Thermal atomic layer etching processesASM IP HOLDING BV·Filed 2023·Granted May 27, 2025·0 cites·7 claims
- 3087US11230769B2Thermal atomic layer etching processesASM IP HOLDING BV·Filed 2020·Granted Jan 25, 2022·1 cites·31 claims
- 3186US11230770B2Thermal atomic layer etching processesASM IP HOLDING BV·Filed 2020·Granted Jan 25, 2022·1 cites·33 claims
- 3286US2025273463A1Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structuresASM IP HOLDING BV·Filed 2025·Application pending·0 cites
- 3385US12283520B2Selective deposition method to form air gapsASM IP HOLDING BV·Filed 2023·Granted Apr 22, 2025·0 cites·20 claims
- 3485US12166099B2Methods for forming a semiconductor device structure and related semiconductor device structuresASM IP HOLDING BV·Filed 2023·Granted Dec 10, 2024·0 cites·18 claims
- 3585US12094686B2Atomic layer etching processesASM IP HOLDING BV·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 3685US11393690B2Deposition methodASM IP HOLDING BV·Filed 2019·Granted Jul 19, 2022·3 cites·25 claims
- 3785US11164955B2Methods for forming a semiconductor device structure and related semiconductor device structuresASM IP HOLDING BV·Filed 2020·Granted Nov 2, 2021·1 cites·20 claims
- 3885US2025092517A1Precursor capsule, a vessel and a methodASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 3984US10607895B2Method for forming a semiconductor device structure comprising a gate fill metalASM IP HOLDING BV·Filed 2017·Granted Mar 31, 2020·3 cites·65 claims
- 4083US12354872B2Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structuresASM IP HOLDING BV·Filed 2023·Granted Jul 8, 2025·0 cites·19 claims
- 4183US11056344B2Layer forming methodASM IP HOLDING BV·Filed 2017·Granted Jul 6, 2021·3 cites·20 claims
- 4281US2024153817A1Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structuresASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 4380US11658030B2Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structuresASM IP HOLDING BV·Filed 2019·Granted May 23, 2023·1 cites·12 claims
- 4480US2025154662A1Thermal atomic layer etching processesASM IP HOLDING BV·Filed 2025·Application pending·0 cites
- 4579US2024429055A1Deposition methodASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 4678US10636889B2Titanium aluminum and tantalum aluminum thin filmsASM IP HOLDING BV·Filed 2018·Granted Apr 28, 2020·1 cites·20 claims
- 4778US10541173B2Selective deposition method to form air gapsASM IP HOLDING BV·Filed 2017·Granted Jan 21, 2020·1 cites·20 claims
- 4877US12237392B2Titanium aluminum and tantalum aluminum thin filmsASM IP HOLDING BV·Filed 2021·Granted Feb 25, 2025·0 cites·16 claims
- 4977US11908736B2Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structuresASM IP HOLDING BV·Filed 2022·Granted Feb 20, 2024·0 cites·17 claims
- 5077US11749562B2Selective deposition method to form air gapsASM IP HOLDING BV·Filed 2021·Granted Sep 5, 2023·0 cites·20 claims
Showing the top 50 of 74 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Chiyu Zhu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →