Inventor · disambiguated record
Cissy Leung
Also filed as: LEUNG CISSY · LEUNG CISSY S
25 granted patents·6,147 citations·filing 1986–2000
98Inventor score
Files withAPPLIED MATERIALS INC25
Top patents by PatentIndex Score
25 records- 0199US5362526APlasma-enhanced CVD process using TEOS for depositing silicon oxideAPPLIED MATERIALS INC·Filed 1991·Granted Nov 8, 1994·484 cites·15 claims
- 0299US5000113AThermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized processAPPLIED MATERIALS INC·Filed 1986·Granted Mar 19, 1991·1.1k cites·19 claims
- 0399US4892753AProcess for PECVD of silicon oxide using TEOS decompositionAPPLIED MATERIALS INC·Filed 1988·Granted Jan 9, 1990·503 cites·12 claims
- 0499US4872947ACVD of silicon oxide using TEOS decomposition and in-situ planarization processAPPLIED MATERIALS INC·Filed 1988·Granted Oct 10, 1989·522 cites·14 claims
- 0598US6167834B1Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized processAPPLIED MATERIALS INC·Filed 1992·Granted Jan 2, 2001·367 cites·5 claims
- 0698US5213650AApparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of waferAPPLIED MATERIALS INC·Filed 1991·Granted May 25, 1993·530 cites·9 claims
- 0798US5028565AProcess for CVD deposition of tungsten layer on semiconductor waferAPPLIED MATERIALS INC·Filed 1989·Granted Jul 2, 1991·387 cites·18 claims
- 0898US4960488AReactor chamber self-cleaning processAPPLIED MATERIALS INC·Filed 1989·Granted Oct 2, 1990·529 cites·16 claims
- 0996US5449410APlasma processing apparatusAPPLIED MATERIALS INC·Filed 1993·Granted Sep 12, 1995·123 cites·18 claims
- 1095US6206967B1Low resistivity W using B2H6 nucleation stepAPPLIED MATERIALS INC·Filed 2000·Granted Mar 27, 2001·311 cites·32 claims
- 1194US6251190B1Gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitrideAPPLIED MATERIALS INC·Filed 2000·Granted Jun 26, 2001·84 cites·18 claims
- 1294US5354715AThermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized processAPPLIED MATERIALS INC·Filed 1992·Granted Oct 11, 1994·132 cites·16 claims
- 1393US6162715AMethod of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitrideAPPLIED MATERIALS INC·Filed 1998·Granted Dec 19, 2000·136 cites·34 claims
- 1493US6099904ALow resistivity W using B2 H6 nucleation stepAPPLIED MATERIALS INC·Filed 1997·Granted Aug 8, 2000·217 cites·33 claims
- 1591US5556476AControlling edge deposition on semiconductor substratesAPPLIED MATERIALS INC·Filed 1994·Granted Sep 17, 1996·134 cites·25 claims
- 1690US5755886AApparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processingAPPLIED MATERIALS INC·Filed 1995·Granted May 26, 1998·91 cites·28 claims
- 1788USRE36623EProcess for PECVD of silicon oxide using TEOS decompositionAPPLIED MATERIALS INC·Filed 1996·Granted Mar 21, 2000·79 cites·13 claims
- 1886US5871811AMethod for protecting against deposition on a selected region of a substrateAPPLIED MATERIALS INC·Filed 1995·Granted Feb 16, 1999·69 cites·45 claims
- 1986US5476548AReducing backside deposition in a substrate processing apparatus through the use of a shadow ringAPPLIED MATERIALS INC·Filed 1994·Granted Dec 19, 1995·92 cites·26 claims
- 2082US5468298ABottom purge manifold for CVD tungsten processAPPLIED MATERIALS INC·Filed 1994·Granted Nov 21, 1995·47 cites·15 claims
- 2181US5075256AProcess for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of waferAPPLIED MATERIALS INC·Filed 1989·Granted Dec 24, 1991·56 cites·18 claims
- 2275US5332443ALift fingers for substrate processing apparatusAPPLIED MATERIALS INC·Filed 1993·Granted Jul 26, 1994·62 cites·20 claims
- 2371US5705080APlasma-inert cover and plasma cleaning processAPPLIED MATERIALS INC·Filed 1994·Granted Jan 6, 1998·41 cites·20 claims
- 2467US5810936APlasma-inert cover and plasma cleaning process and apparatus employing sameAPPLIED MATERIALS INC·Filed 1996·Granted Sep 22, 1998·28 cites·2 claims
- 2554US5201990AProcess for treating aluminum surfaces in a vacuum apparatusAPPLIED MATERIALS INC·Filed 1991·Granted Apr 13, 1993·23 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →