Inventor · disambiguated record
Claudio Resta
Also filed as: RESTA CLAUDIO
35 granted patents·803 citations·filing 2003–2019
98Inventor score
Files withOVONYX INC9ST MICROELECTRONICS SRL7BEDESCHI FERDINANDO6MICRON TECHNOLOGY INC4LOWREY TYLER3
Top patents by PatentIndex Score
35 records- 0199US7154774B2Detecting switching of access elements of phase change memory cellsOVONYX INC·Filed 2005·Granted Dec 26, 2006·137 cites·13 claims
- 0298US7388775B2Detecting switching of access elements of phase change memory cellsOVONYX INC·Filed 2006·Granted Jun 17, 2008·98 cites·12 claims
- 0396US7675792B2Generating reference currents compensated for process variation in non-volatile memoriesINTEL CORP·Filed 2007·Granted Mar 9, 2010·52 cites·30 claims
- 0496US7570524B2Circuitry for reading phase change memory cells having a clamping circuitOVONYX INC·Filed 2005·Granted Aug 4, 2009·44 cites·4 claims
- 0595US7050328B2Phase change memory deviceOVONYX INC·Filed 2004·Granted May 23, 2006·91 cites·25 claims
- 0693US7495944B2Reading phase change memoriesOVONYX INC·Filed 2005·Granted Feb 24, 2009·23 cites·16 claims
- 0792US8259515B2Circuitry for reading phase-change memory cells having a clamping circuitBEDESCHI FERDINANDO·Filed 2009·Granted Sep 4, 2012·21 cites·6 claims
- 0891US7324371B2Method of writing to a phase change memory deviceST MICROELECTRONICS SRL·Filed 2006·Granted Jan 29, 2008·22 cites·24 claims
- 0990US7787291B2Programming a multilevel phase change memory cellINTEL CORP·Filed 2007·Granted Aug 31, 2010·28 cites·19 claims
- 1088US7885101B2Method for low-stress multilevel reading of phase change memory cells and multilevel phase change memoryNUMONYX BV·Filed 2008·Granted Feb 8, 2011·24 cites·18 claims
- 1188US7075841B2Writing circuit for a phase change memory deviceST MICROELECTRONICS SRL·Filed 2004·Granted Jul 11, 2006·46 cites·31 claims
- 1286US9851913B2Methods for operating a memory arrayMICRON TECHNOLOGY INC·Filed 2016·Granted Dec 26, 2017·3 cites·21 claims
- 1385US7092277B2Phase-change memory device with biasing of deselected bit linesST MICROELECTRONICS SRL·Filed 2004·Granted Aug 15, 2006·39 cites·28 claims
- 1485US7020014B2Circuit and method for temperature tracing of devices including an element of chalcogenic material, in particular phase change memory devicesOVONYX INC·Filed 2003·Granted Mar 28, 2006·36 cites·31 claims
- 1584US8149616B2Method for multilevel programming of phase change memory cells using adaptive reset pulsesBEDESCHI FERDINANDO·Filed 2010·Granted Apr 3, 2012·10 cites·25 claims
- 1683US8259525B2Using a bit specific reference level to read a memoryLOWREY TYLER·Filed 2012·Granted Sep 4, 2012·6 cites·14 claims
- 1779US7149132B2Biasing circuit for use in a non-volatile memory deviceOVONYX INC·Filed 2004·Granted Dec 12, 2006·25 cites·10 claims
- 1878US10416909B2Methods for phase-change memory arrayMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 17, 2019·1 cites·18 claims
- 1978US7269080B2Nonvolatile phase change memory device and biasing method thereforST MICROELECTRONICS SRL·Filed 2005·Granted Sep 11, 2007·11 cites·31 claims
- 2077US10216438B2Methods and related devices for operating a memory arrayMICRON TECHNOLOGY INC·Filed 2017·Granted Feb 26, 2019·1 cites·16 claims
- 2177US7203087B2Fast reading, low consumption memory device and reading method thereofOVONYX INC·Filed 2004·Granted Apr 10, 2007·24 cites·25 claims
- 2275US8098512B2Reading phase change memoriesPARKINSON WARD D·Filed 2011·Granted Jan 17, 2012·3 cites·9 claims
- 2375US7257039B2Bit line discharge control method and circuit for a semiconductor memoryST MICROELECTRONICS SRL·Filed 2004·Granted Aug 14, 2007·20 cites·43 claims
- 2472US8705306B2Method for using a bit specific reference level to read a phase change memoryLOWREY TYLER·Filed 2012·Granted Apr 22, 2014·3 cites·10 claims
- 2570US8116159B2Using a bit specific reference level to read a resistive memoryLOWREY TYLER·Filed 2005·Granted Feb 14, 2012·5 cites·11 claims
- 2669US9251897B2Methods for a phase-change memory arrayBEDESCHI FERDINANDO·Filed 2009·Granted Feb 2, 2016·4 cites·22 claims
- 2765US7068534B2Phase-change memory device with overvoltage protection and method for protecting a phase-change memory device against overvoltagesUNIV PAVIA·Filed 2004·Granted Jun 27, 2006·14 cites·35 claims
- 2864US7414902B2Semiconductor memory device with information loss self-detect capabilityST MICROELECTRONICS SRL·Filed 2006·Granted Aug 19, 2008·5 cites·36 claims
- 2960US8223535B2Phase-change memory device with discharge of leakage currents in deselected bitlines and method for discharging leakage currents in deselected bitlines of a phase-change memory deviceBEDESCHI FERDINANDO·Filed 2009·Granted Jul 17, 2012·4 cites·21 claims
- 3059US8565031B2Method for reading phase change memory cells having a clamping circuitBEDESCHI FERDINANDO·Filed 2012·Granted Oct 22, 2013·1 cites·7 claims
- 3156US11003365B2Methods and related devices for operating a memory arrayMICRON TECHNOLOGY INC·Filed 2019·Granted May 11, 2021·0 cites·25 claims
- 3251US7869267B2Method for low power accessing a phase change memory deviceNUMONYX BV·Filed 2008·Granted Jan 11, 2011·2 cites·13 claims
- 3344US7936584B2Reading phase change memoriesOVONYX INC·Filed 2009·Granted May 3, 2011·0 cites·19 claims
- 3443US8026757B2Current mirror circuit, in particular for a non-volatile memory deviceST MICROELECTRONICS SRL·Filed 2009·Granted Sep 27, 2011·0 cites·16 claims
- 3540US8760938B2Writing bit alterable memoriesBEDESCHI FERDINANDO·Filed 2007·Granted Jun 24, 2014·0 cites·28 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →