Inventor · disambiguated record
Craig Printy
Also filed as: PRINTY CRAIG · PRINTY CRAIG RICHARD
9 granted patents·2 pending applications·27 citations·filing 2004–2025
84Inventor score
Top patents by PatentIndex Score
11 records- 0178US7485538B1High performance SiGe HBT with arsenic atomic layer dopingNAT SEMICONDUCTOR CORP·Filed 2006·Granted Feb 3, 2009·6 cites·21 claims
- 0277US7892915B1High performance SiGe:C HBT with phosphorous atomic layer dopingNAT SEMICONDUCTOR CORP·Filed 2006·Granted Feb 22, 2011·5 cites·20 claims
- 0377US2025338578A1Device having multiple emitter layersTEXAS INSTRUMENTS INC·Filed 2025·Application pending·0 cites
- 0469US7508531B1System and method for measuring germanium concentration for manufacturing control of BiCMOS filmsNAT SEMICONDUCTOR CORP·Filed 2007·Granted Mar 24, 2009·3 cites·20 claims
- 0568US7781295B1System and method for providing a single deposition emitter/base in a bipolar junction transistorNAT SEMICONDUCTOR CORP·Filed 2006·Granted Aug 24, 2010·4 cites·20 claims
- 0665US12382684B2Device having multiple emitter layersTEXAS INSTRUMENTS INC·Filed 2021·Granted Aug 5, 2025·0 cites·24 claims
- 0764US8007675B1System and method for controlling an etch process for a single crystal having a buried layerNAT SEMICONDUCTOR CORP·Filed 2005·Granted Aug 30, 2011·2 cites·20 claims
- 0863US7829429B1Semiconductor device having localized insulated block in bulk substrate and related methodNAT SEMICONDUCTOR CORP·Filed 2007·Granted Nov 9, 2010·2 cites·20 claims
- 0956US7319530B1System and method for measuring germanium concentration for manufacturing control of BiCMOS filmsNAT SEMICONDUCTOR CORP·Filed 2004·Granted Jan 15, 2008·5 cites·20 claims
- 1045US2011042778A1Semiconductor device having localized insulated block in bulk substrate and related methodNAT SEMICONDUCTOR CORP·Filed 2010·Application pending·0 cites
- 1137US8115196B2High performance SiGe:C HBT with phosphorous atomic layer dopingRAMDANI JANIAL·Filed 2011·Granted Feb 14, 2012·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →