Inventor · disambiguated record
Craig A. Roderick
Also filed as: RODERICK CRAIG · RODERICK CRAIG A · RODERICK CRAIG ALAN
36 granted patents·2 pending applications·3,612 citations·filing 1990–2004
99Inventor score
Files withAPPLIED MATERIALS INC35
Top patents by PatentIndex Score
38 records- 0198US6252354B1RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT controlAPPLIED MATERIALS INC·Filed 1996·Granted Jun 26, 2001·337 cites·72 claims
- 0298US5187454AElectronically tuned matching network using predictor-corrector control systemAPPLIED MATERIALS INC·Filed 1992·Granted Feb 16, 1993·165 cites·38 claims
- 0397US6518195B1Plasma reactor using inductive RF coupling, and processesAPPLIED MATERIALS INC·Filed 2000·Granted Feb 11, 2003·162 cites·8 claims
- 0497US5556501ASilicon scavenger in an inductively coupled RF plasma reactorAPPLIED MATERIALS INC·Filed 1993·Granted Sep 17, 1996·396 cites·15 claims
- 0596US6488807B1Magnetic confinement in a plasma reactor having an RF bias electrodeAPPLIED MATERIALS INC·Filed 2000·Granted Dec 3, 2002·145 cites·6 claims
- 0696US6074512AInductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet linersAPPLIED MATERIALS INC·Filed 1997·Granted Jun 13, 2000·236 cites·101 claims
- 0796US5300460AUHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafersAPPLIED MATERIALS INC·Filed 1993·Granted Apr 5, 1994·109 cites·26 claims
- 0896US5210466AVHF/UHF reactor systemAPPLIED MATERIALS INC·Filed 1992·Granted May 11, 1993·124 cites·17 claims
- 0994US6043607AApparatus for exciting a plasma in a semiconductor wafer processing system using a complex RF waveformAPPLIED MATERIALS INC·Filed 1997·Granted Mar 28, 2000·89 cites·29 claims
- 1093US6545420B1Plasma reactor using inductive RF coupling, and processesAPPLIED MATERIALS INC·Filed 1995·Granted Apr 8, 2003·135 cites·13 claims
- 1193US6444085B1Inductively coupled RF plasma reactor having an antenna adjacent a window electrodeAPPLIED MATERIALS INC·Filed 2000·Granted Sep 3, 2002·54 cites·59 claims
- 1293US6068784AProcess used in an RF coupled plasma reactorAPPLIED MATERIALS INC·Filed 1993·Granted May 30, 2000·173 cites·28 claims
- 1393US5350479AElectrostatic chuck for high power plasma processingAPPLIED MATERIALS INC·Filed 1992·Granted Sep 27, 1994·199 cites·32 claims
- 1492US6251792B1Plasma etch processesAPPLIED MATERIALS INC·Filed 1997·Granted Jun 26, 2001·122 cites·18 claims
- 1592US6165311AInductively coupled RF plasma reactor having an overhead solenoidal antennaAPPLIED MATERIALS INC·Filed 1996·Granted Dec 26, 2000·98 cites·64 claims
- 1691US6074488APlasma chamber support having an electrically coupled collar ringAPPLIED MATERIALS INC·Filed 1997·Granted Jun 13, 2000·118 cites·42 claims
- 1791US6063233AThermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antennaAPPLIED MATERIALS INC·Filed 1996·Granted May 16, 2000·92 cites·20 claims
- 1890US6024826APlasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 1996·Granted Feb 15, 2000·100 cites·68 claims
- 1989US6736931B2Inductively coupled RF plasma reactor and plasma chamber enclosure structure thereforFiled 2001·Granted May 18, 2004·34 cites·24 claims
- 2089US6454898B1Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet linersAPPLIED MATERIALS INC·Filed 2000·Granted Sep 24, 2002·43 cites·28 claims
- 2189US5349313AVariable RF power splitterAPPLIED MATERIALS INC·Filed 1993·Granted Sep 20, 1994·53 cites·15 claims
- 2287US6353206B1Plasma system with a balanced sourceAPPLIED MATERIALS INC·Filed 1996·Granted Mar 5, 2002·52 cites·11 claims
- 2386US6790311B2Plasma reactor having RF power applicator and a dual-purpose windowFiled 2001·Granted Sep 14, 2004·31 cites·17 claims
- 2485US6218312B1Plasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 1998·Granted Apr 17, 2001·61 cites·36 claims
- 2584US5574410AElectronically tuned matching networks using adjustable inductance elements and resonant tank circuitsAPPLIED MATERIALS INC·Filed 1994·Granted Nov 12, 1996·66 cites·20 claims
- 2684US5392018AElectronically tuned matching networks using adjustable inductance elements and resonant tank circuitsAPPLIED MATERIALS INC·Filed 1992·Granted Feb 21, 1995·70 cites·7 claims
- 2783US6440866B1Plasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 2000·Granted Aug 27, 2002·22 cites·101 claims
- 2882US5583737AElectrostatic chuck usable in high density plasmaAPPLIED MATERIALS INC·Filed 1995·Granted Dec 10, 1996·57 cites·14 claims
- 2981US6365063B2Plasma reactor having a dual mode RF power applicationAPPLIED MATERIALS INC·Filed 1999·Granted Apr 2, 2002·49 cites·28 claims
- 3079US5539609AElectrostatic chuck usable in high density plasmaAPPLIED MATERIALS INC·Filed 1993·Granted Jul 23, 1996·60 cites·15 claims
- 3178US6514376B1Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antennaAPPLIED MATERIALS INC·Filed 2000·Granted Feb 4, 2003·22 cites·50 claims
- 3276US5065118AElectronically tuned VHF/UHF matching networkAPPLIED MATERIALS INC·Filed 1990·Granted Nov 12, 1991·29 cites·21 claims
- 3371US6036877APlasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 1996·Granted Mar 14, 2000·30 cites·71 claims
- 3471US5572170AElectronically tuned matching networks using adjustable inductance elements and resonant tank circuitsAPPLIED MATERIALS INC·Filed 1995·Granted Nov 5, 1996·31 cites·12 claims
- 3570US5990017APlasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 1998·Granted Nov 23, 1999·32 cites·27 claims
- 3653US5872456AApparatus for directly measuring component values within an RF circuitAPPLIED MATERIALS INC·Filed 1997·Granted Feb 16, 1999·16 cites·10 claims
- 3745US2004163764A1Inductively coupled RF plasma reactor and plasma chamber enclosure structure thereforAPPLIED MATERIALS INC·Filed 2004·Application pending·0 cites
- 3830US2002004309A1Processes used in an inductively coupled plasma reactorFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →