Inventor · disambiguated record
Cristina Tringali
Also filed as: TRINGALI CRISTINA
14 granted patents·18 pending applications·5 citations·filing 2012–2025
86Inventor score
Top patents by PatentIndex Score
32 records- 0182US12308235B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2023·Granted May 20, 2025·0 cites·17 claims
- 0278US11854809B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2022·Granted Dec 26, 2023·0 cites·18 claims
- 0376US11018008B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2018·Granted May 25, 2021·1 cites·20 claims
- 0475US2025095998A1Method for manufacturing a gate terminal of a hemt device, and hemt deviceST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 0574US9099305B2Method for coupling a graphene layer and a substrate and device comprising the graphene/substrate structure obtainedST MICROELECTRONICS SRL·Filed 2014·Granted Aug 4, 2015·3 cites·23 claims
- 0674US2025040164A1Method for manufacturing an ohmic contact for a hemt deviceST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 0772US12154967B2Method for manufacturing an ohmic contact for a HEMT deviceST MICROELECTRONICS SRL·Filed 2019·Granted Nov 26, 2024·1 cites·18 claims
- 0871US12278283B2HEMT transistor including an improved gate region and related manufacturing processST MICROELECTRONICS SRL·Filed 2023·Granted Apr 15, 2025·0 cites·18 claims
- 0971US11545362B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2021·Granted Jan 3, 2023·0 cites·20 claims
- 1070US12166143B2Photovoltaic cellST MICROELECTRONICS SRL·Filed 2022·Granted Dec 10, 2024·0 cites·20 claims
- 1163US2025212439A1Semiconductor device based on heterostructure having a back contact region and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1260US12165871B2Method for manufacturing a gate terminal of a HEMT device, and HEMT deviceST MICROELECTRONICS SRL·Filed 2020·Granted Dec 10, 2024·0 cites·18 claims
- 1360US2024405115A1Hemt device having an improved conductivity and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1459US2024304710A1Hemt device having improved on-state performance and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1559US2024304711A1Hemt device having a reduced on-resistance and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1658US2024313102A1Normally-off heterojunction integrated device and method for manufacturing an integrated deviceST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1758US2025142862A1Normally-on gan hemt integration on monolithic p-gan integrated circuitsST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 1858US2024304713A1Hemt device having a reduced gate leakage and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1958US2024332413A1Hemt device having an improved gate structure and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 2058US2024194763A1Hemt transistorST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 2158US2025142864A1In situ plasma treatment before al2o3 deposition for improved ronST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 2258US2024266425A1Hemt transistorST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 2357US11799025B2HEMT transistor including an improved gate region and related manufacturing processST MICROELECTRONICS SRL·Filed 2019·Granted Oct 24, 2023·0 cites·17 claims
- 2457US11257975B2Photovoltaic cellST MICROELECTRONICS SRL·Filed 2018·Granted Feb 22, 2022·0 cites·21 claims
- 2557US2024274702A1Hemt transistorST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 2656US2025366136A1Normally-off hemt device with improved dynamic performances, and manufacturing method thereofST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 2754US2025142928A1Back barrier integration scheme for gan devicesST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 2852US10128396B2Photovoltaic cellST MICROELECTRONICS SRL·Filed 2013·Granted Nov 13, 2018·0 cites·19 claims
- 2951US2016079453A1Thin refractory metal layer used as contact barrier to improve the performance of thin-film solar cellsST MICROELECTRONICS SRL·Filed 2015·Application pending·0 cites
- 3047US9331151B2Method for coupling a graphene layer and a substrate and device comprising the graphene/substrate structure obtainedST MICROELECTRONICS SRL·Filed 2015·Granted May 3, 2016·0 cites·32 claims
- 3146US2025240997A1Improved hemt device, in particular depletion mode device, and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 3240US10103281B2Thin refractory metal layer used as contact barrier to improve the performance of thin-film solar cellsLOMBARDO SALVATORE·Filed 2012·Granted Oct 16, 2018·0 cites·21 claims
Join the waitlist — get patent alerts
Get an alert when Cristina Tringali files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →