Inventor · disambiguated record
Curtis Chun-I Hsieh
Also filed as: HSIEH CURTIS CHUN-I
37 granted patents·5 pending applications·111 citations·filing 2016–2023
96Inventor score
Files withGLOBALFOUNDRIES SG PTE LTD42
Top patents by PatentIndex Score
42 records- 0198US9905282B1Top electrode dome formationGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Feb 27, 2018·15 cites·20 claims
- 0297US9865649B2Integrated two-terminal device and logic device with compact interconnects having shallow via for embedded applicationGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Jan 9, 2018·26 cites·19 claims
- 0396US11522131B2Resistive memory device and methods of making such a resistive memory deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Dec 6, 2022·4 cites·15 claims
- 0495US10580968B1Integrated circuit with memory cells having reliable interconnectionGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Mar 3, 2020·23 cites·15 claims
- 0591US11978510B2Memory devices and methods of forming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted May 7, 2024·2 cites·17 claims
- 0691US10693054B2MTJ bottom metal via in a memory cell and method for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Jun 23, 2020·4 cites·11 claims
- 0789US10651380B1Memory devices and methods of forming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted May 12, 2020·6 cites·20 claims
- 0888US11289649B2Non-volatile memory elements with a narrowed electrodeGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Mar 29, 2022·2 cites·20 claims
- 0987US10608046B2Integrated two-terminal device with logic device for embedded applicationGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Mar 31, 2020·4 cites·16 claims
- 1086US10490745B2Vertical and planar RRAM with tip electrodes and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Nov 26, 2019·5 cites·20 claims
- 1186US10062733B1Integrated circuits with magnetic tunnel junction memory cells and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Aug 28, 2018·5 cites·16 claims
- 1284US10483461B2Embedded MRAM in interconnects and method for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Nov 19, 2019·4 cites·10 claims
- 1384US10446607B2Integrated two-terminal device with logic device for embedded applicationGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Oct 15, 2019·4 cites·14 claims
- 1477US10381403B1MRAM device with improved seal ring and method for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Aug 13, 2019·2 cites·20 claims
- 1574US10475990B2Pillar contact extension and method for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Nov 12, 2019·2 cites·17 claims
- 1673US10262868B1Self-aligned planarization of low-K dielectrics and method for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Apr 16, 2019·1 cites·14 claims
- 1770US10734572B2Device with capping layer for improved residue defect and method of production thereofGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Aug 4, 2020·1 cites·19 claims
- 1868US12484234B2Resistive random-access memory elements with lateral sidewall switchingGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 1964US11690306B2Correlated electron resistive memory device and integration schemesGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Jun 27, 2023·0 cites·20 claims
- 2062US11127459B1Memory devices and methods of forming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Sep 21, 2021·0 cites·11 claims
- 2160US10593728B1Integrated circuits and methods for fabricating integrated circuits with magnetic tunnel junction (MTJ) structuresGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Mar 17, 2020·1 cites·19 claims
- 2258US12341058B2Air gap through at least two metal layersGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Granted Jun 24, 2025·0 cites·20 claims
- 2358US11031251B2Self-aligned planarization of low-k dielectrics and method for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Jun 8, 2021·0 cites·18 claims
- 2458US10566384B2Two pass MRAM dummy solutionGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Feb 18, 2020·0 cites·14 claims
- 2557US11233195B2Memory devices and methods of forming memory devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Jan 25, 2022·0 cites·19 claims
- 2656US11641789B2Memory cells and methods for forming memory cellsGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted May 2, 2023·0 cites·20 claims
- 2755US10158066B1Two pass MRAM dummy solutionGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Dec 18, 2018·0 cites·8 claims
- 2855US2024049611A1Resistive memory devices with a cavity between electrodesGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Application pending·0 cites
- 2955US2025057058A1Resistive memory elements with a multiple-material electrodeGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Application pending·0 cites
- 3054US12500119B2Air gap with inverted T-shaped lower portion extending through at least one metal layer, and related methodGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 3152US11832538B2Resistive memory elements with an embedded heating electrodeGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Nov 28, 2023·0 cites·20 claims
- 3251US11515475B2Resistive random access memory devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Nov 29, 2022·0 cites·15 claims
- 3351US11270938B2Semiconductor devices and methods of forming semiconductor devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Mar 8, 2022·0 cites·18 claims
- 3451US10720580B2RRAM device and method of fabrication thereofGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Jul 21, 2020·0 cites·20 claims
- 3551US10629650B2Integrated circuits with memory cells and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Apr 21, 2020·0 cites·19 claims
- 3651US2020194498A1Integrated circuits with memory cells and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Application pending·0 cites
- 3751US2023197610A1Conductive line structure having corrugated surfaceGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Application pending·0 cites
- 3849US10734444B1Integrated circuits with integrated memory structures and capacitors and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Aug 4, 2020·0 cites·19 claims
- 3948US11081523B1Memory devices and methods of forming memory devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Aug 3, 2021·0 cites·20 claims
- 4046US10256273B2High density cross point resistive memory structures and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Apr 9, 2019·0 cites·16 claims
- 4138US11127784B2Integrated circuits with embedded memory structures and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Sep 21, 2021·0 cites·12 claims
- 4238US2018175284A1Integrated circuits and methods for fabricating integrated circuits with magnetic tunnel junction (mtj) structuresGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →