Inventor · disambiguated record
Dafna Beery
Also filed as: BEERY DAFNA
41 granted patents·2 pending applications·80 citations·filing 2002–2022
96Inventor score
Files withSPIN MEMORY INC24INTEGRATED SILICON SOLUTION CAYMAN INC13SPIN TRANSFER TECH INC3CROCUS TECHNOLOGY INC1CYPRESS SEMICONDUCTOR CORP1
Top patents by PatentIndex Score
43 records- 0195US10333063B1Fabrication of a perpendicular magnetic tunnel junction (PMTJ) using block copolymersSPIN MEMORY INC·Filed 2018·Granted Jun 25, 2019·6 cites·20 claims
- 0293US10355045B1Three dimensional perpendicular magnetic junction with thin-film transistorSPIN MEMORY INC·Filed 2017·Granted Jul 16, 2019·9 cites·21 claims
- 0390US10937479B1Integration of epitaxially grown channel selector with MRAM deviceSPIN MEMORY INC·Filed 2019·Granted Mar 2, 2021·5 cites·12 claims
- 0489US10186551B1Buried tap for a vertical transistor used with a perpendicular magnetic tunnel junction (PMTJ)SPIN TRANSFER TECH INC·Filed 2018·Granted Jan 22, 2019·6 cites·14 claims
- 0588US10957370B1Integration of epitaxially grown channel selector with two terminal resistive switching memory elementSPIN MEMORY INC·Filed 2019·Granted Mar 23, 2021·4 cites·11 claims
- 0688US10658425B2Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channelsSPIN MEMORY INC·Filed 2018·Granted May 19, 2020·5 cites·12 claims
- 0787US10468293B2Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channelsSPIN MEMORY INC·Filed 2017·Granted Nov 5, 2019·5 cites·20 claims
- 0883US8962493B2Magnetic random access memory cells having improved size and shape characteristicsLEVI AMITAY·Filed 2010·Granted Feb 24, 2015·7 cites·15 claims
- 0980US10629649B2Method of making a three dimensional perpendicular magnetic tunnel junction with thin-film transistorSPIN MEMORY INC·Filed 2017·Granted Apr 21, 2020·3 cites·24 claims
- 1078US10686009B2High density MRAM integrationSPIN MEMORY INC·Filed 2018·Granted Jun 16, 2020·1 cites·16 claims
- 1178US9059400B2Magnetic random access memory cells with isolating linersCROCUS TECHNOLOGY INC·Filed 2014·Granted Jun 16, 2015·3 cites·7 claims
- 1277US10438999B2Annular vertical Si etched channel MOS devicesSPIN MEMORY INC·Filed 2017·Granted Oct 8, 2019·2 cites·8 claims
- 1375US10355047B1Fabrication methods of forming annular vertical SI etched channel MOS devicesSPIN MEMORY INC·Filed 2017·Granted Jul 16, 2019·2 cites·6 claims
- 1474US12069964B2Three dimensional perpendicular magnetic tunnel junction with thin film transistor arrayINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2022·Granted Aug 20, 2024·0 cites·14 claims
- 1571US11688649B2Compact and efficient CMOS inverterINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2022·Granted Jun 27, 2023·0 cites·20 claims
- 1670US11626407B2DRAM with selective epitaxial cell transistorINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2022·Granted Apr 11, 2023·0 cites·19 claims
- 1770US11417829B2Three dimensional perpendicular magnetic tunnel junction with thin film transistor arrayINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2018·Granted Aug 16, 2022·2 cites·14 claims
- 1870US10243021B1Steep slope field-effect transistor (FET) for a perpendicular magnetic tunnel junction (PMTJ)SPIN MEMORY INC·Filed 2017·Granted Mar 26, 2019·1 cites·20 claims
- 1968US10460778B2Perpendicular magnetic tunnel junction memory cells having shared source contactsSPIN MEMORY INC·Filed 2017·Granted Oct 29, 2019·2 cites·9 claims
- 2068US10431628B2Dual channel/gate vertical field-effect transistor (FET) for use with a perpendicular magnetic tunnel junction (PMTJ)SPIN MEMORY INC·Filed 2018·Granted Oct 1, 2019·1 cites·15 claims
- 2168US10347822B1Fabrication methods of forming cylindrical vertical SI etched channel 3D switching devicesSPIN MEMORY INC·Filed 2017·Granted Jul 9, 2019·1 cites·14 claims
- 2265US11631807B2Patterned silicide structures and methods of manufactureINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2021·Granted Apr 18, 2023·0 cites·20 claims
- 2364US10438995B2Devices including magnetic tunnel junctions integrated with selectorsSPIN TRANSFER TECH INC·Filed 2018·Granted Oct 8, 2019·2 cites·21 claims
- 2463US11302697B2DRAM with selective epitaxial cell transistorINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2020·Granted Apr 12, 2022·0 cites·15 claims
- 2563US10840298B1Vertical selector STT-MRAM architectureSPIN MEMORY INC·Filed 2019·Granted Nov 17, 2020·1 cites·18 claims
- 2663US6774033B1Metal stack for local interconnect layerCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Aug 10, 2004·11 cites·17 claims
- 2762US10930703B2High density MRAM integrationSPIN MEMORY INC·Filed 2018·Granted Feb 23, 2021·0 cites·14 claims
- 2860US11302586B2Compact and efficient CMOS inverterINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2020·Granted Apr 12, 2022·0 cites·6 claims
- 2959US10355046B1Steep slope field-effect transistor (FET) for a perpendicular magnetic tunnel junction (PMTJ)SPIN MEMORY INC·Filed 2017·Granted Jul 16, 2019·1 cites·19 claims
- 3057US11107979B2Patterned silicide structures and methods of manufactureSPIN MEMORY INC·Filed 2018·Granted Aug 31, 2021·0 cites·20 claims
- 3156US10854255B1Vertical selector stt-MRAM architectureSPIN MEMORY INC·Filed 2019·Granted Dec 1, 2020·0 cites·17 claims
- 3253US11444123B2Selector transistor with metal replacement gate wordlineINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2020·Granted Sep 13, 2022·0 cites·18 claims
- 3352US11600769B2High density spin orbit torque magnetic random access memoryINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2021·Granted Mar 7, 2023·0 cites·20 claims
- 3452US11329048B2DRAM with selective epitaxial transistor and buried bitlineINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2020·Granted May 10, 2022·0 cites·19 claims
- 3549US10790333B2Flexible substrate for use with a perpendicular magnetic tunnel junction (PMTJ)SPIN MEMORY INC·Filed 2017·Granted Sep 29, 2020·0 cites·9 claims
- 3648US10438996B2Methods of fabricating magnetic tunnel junctions integrated with selectorsSPIN TRANSFER TECH INC·Filed 2018·Granted Oct 8, 2019·0 cites·21 claims
- 3746US2020127052A1Memory cell using selective epitaxial vertical channel mos selector transistorSPIN MEMORY INC·Filed 2019·Application pending·0 cites
- 3844US11545524B2Selector transistor with continuously variable current driveINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2020·Granted Jan 3, 2023·0 cites·19 claims
- 3943US11342498B2High density 3D magnetic random access memory (MRAM) cell integration using wafer cut and transferINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2018·Granted May 24, 2022·0 cites·13 claims
- 4042US10916582B2Vertically-strained silicon device for use with a perpendicular magnetic tunnel junction (PMTJ)SPIN MEMORY INC·Filed 2017·Granted Feb 9, 2021·0 cites·16 claims
- 4142US10347311B1Cylindrical vertical SI etched channel 3D switching devicesSPIN MEMORY INC·Filed 2017·Granted Jul 9, 2019·0 cites·10 claims
- 4241US11222970B2Perpendicular magnetic tunnel junction memory cells having vertical channelsINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2017·Granted Jan 11, 2022·0 cites·17 claims
- 4335US2019207098A1Vertical compound semiconductor for use with a perpendicular magnetic tunnel junction (pmtj)SPIN MEMORY INC·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →