Inventor · disambiguated record
Darin A. Chan
Also filed as: CHAN DARIN · CHAN DARIN A · CHAN DARIN ARTHUR
41 granted patents·2 pending applications·731 citations·filing 1994–2020
98Inventor score
Files withADVANCED MICRO DEVICES INC34GLOBALFOUNDRIES SG PTE LTD6ADVANCED MIRCO DEVICES INC1GLOBALFOUNDRIES INC1MADHAVAN SRIRAM1
Top patents by PatentIndex Score
43 records- 0197US6441435B1SOI device with wrap-around contact to underside of body, and method of makingADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 27, 2002·172 cites·19 claims
- 0292US6750127B1Method for fabricating a semiconductor device using amorphous carbon having improved etch resistanceADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 15, 2004·61 cites·9 claims
- 0391US6764949B2Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 20, 2004·53 cites·18 claims
- 0489US9780231B1Integrated circuits with flash memory and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Oct 3, 2017·6 cites·20 claims
- 0588US11545570B2High-voltage devices integrated on semiconductor-on-insulator substrateGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Jan 3, 2023·2 cites·20 claims
- 0686US9825185B1Integrated circuits and methods for fabricating integrated circuits with non-volatile memory structuresGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Nov 21, 2017·5 cites·20 claims
- 0780US6521510B1Method for shallow trench isolation with removal of strained island edgesADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 18, 2003·32 cites·16 claims
- 0879US7861195B2Process for design of semiconductor circuitsADVANCED MIRCO DEVICES INC·Filed 2008·Granted Dec 28, 2010·10 cites·7 claims
- 0979US5456756AHolding apparatus, a metal deposition system, and a wafer processing method which preserve topographical marks on a semiconductor waferADVANCED MICRO DEVICES INC·Filed 1994·Granted Oct 10, 1995·58 cites·18 claims
- 1078US6764917B1SOI device with different silicon thicknessesADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 20, 2004·23 cites·15 claims
- 1175US9698200B2Magnetism-controllable dummy structures in memory deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Jul 4, 2017·2 cites·20 claims
- 1275US8293606B2Body tie test structure for accurate body effect measurementMADHAVAN SRIRAM·Filed 2010·Granted Oct 23, 2012·4 cites·17 claims
- 1374US7223640B2Semiconductor component and method of manufactureADVANCED MICRO DEVICES INC·Filed 2005·Granted May 29, 2007·6 cites·13 claims
- 1471US5597458AMethod for producing alloy films using cold sputter deposition processADVANCED MICRO DEVICES INC·Filed 1995·Granted Jan 28, 1997·40 cites·12 claims
- 1569US6566176B1SOI device with wrap-around contact to underside of body, and method of makingADVANCED MICRO DEVICES INC·Filed 2002·Granted May 20, 2003·13 cites·19 claims
- 1669US5614446AHolding apparatus, a metal deposition system, and a wafer processing method which preserve topographical marks on a semiconductor waferADVANCED MICRO DEVICES INC·Filed 1995·Granted Mar 25, 1997·30 cites·7 claims
- 1768US7880229B2Body tie test structure for accurate body effect measurementGLOBALFOUNDRIES INC·Filed 2007·Granted Feb 1, 2011·2 cites·12 claims
- 1866US6114235AMultipurpose cap layer dielectricADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 5, 2000·32 cites·6 claims
- 1965US6764947B1Method for reducing gate line deformation and reducing gate line widths in semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 20, 2004·9 cites·13 claims
- 2064US7015076B1Selectable open circuit and anti-fuse element, and fabrication method thereforADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 21, 2006·10 cites·10 claims
- 2164US6780776B1Nitride offset spacer to minimize silicon recess by using poly reoxidation layer as etch stop layerADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 24, 2004·9 cites·15 claims
- 2264US6403492B1Method of manufacturing semiconductor devices with trench isolationADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 11, 2002·9 cites·22 claims
- 2360US6022799AMethods for making a semiconductor device with improved hot carrier lifetimeADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 8, 2000·24 cites·11 claims
- 2458US7494885B1Disposable spacer process for field effect transistor fabricationADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 24, 2009·8 cites·7 claims
- 2558US6399480B1Methods and arrangements for insulating local interconnects for improved alignment tolerance and size reductionADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 4, 2002·7 cites·7 claims
- 2655US7023059B1Trenches to reduce lateral silicide growth in integrated circuit technologyADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 4, 2006·6 cites·8 claims
- 2755US6812077B1Method for patterning narrow gate linesADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 2, 2004·6 cites·5 claims
- 2853US6121663ALocal interconnects for improved alignment tolerance and size reductionADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 19, 2000·16 cites·10 claims
- 2951US6166428AFormation of a barrier layer for tungsten damascene interconnects by nitrogen implantation of amorphous silicon or polysiliconADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 26, 2000·16 cites·12 claims
- 3050US5895269AMethods for preventing deleterious punch-through during local interconnect formationADVANCED MICRO DEVICES INC·Filed 1997·Granted Apr 20, 1999·15 cites·10 claims
- 3149US7250667B2Selectable open circuit and anti-fuse elementADVANCED MICRO DEVICES INC·Filed 2006·Granted Jul 31, 2007·0 cites·8 claims
- 3248US10978510B2Memory device with density-controllable dummy fill strategy for near-MRAM periphery and far-outside-MRAM logic regions for embedded MRAM technologyGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Apr 13, 2021·0 cites·19 claims
- 3345US10374005B2Density-controllable dummy fill strategy for near-MRAM periphery and far-outside-MRAM logic regions for embedded MRAM technology and method for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Aug 6, 2019·0 cites·10 claims
- 3445US7151020B1Conversion of transition metal to silicide through back end processing in integrated circuit technologyADVANCED MICRO DEVICES INC·Filed 2004·Granted Dec 19, 2006·2 cites·10 claims
- 3544US6153933AElimination of residual materials in a multiple-layer interconnect structureADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 28, 2000·13 cites·12 claims
- 3644US2008305613A1Method for fabricating an soi defined semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2007·Application pending·0 cites
- 3743US6127261AMethod of fabricating an integrated circuit including a tri-layer pre-metal interlayer dielectric compatible with advanced CMOS technologiesADVANCED MICRO DEVICES INC·Filed 1995·Granted Oct 3, 2000·10 cites·24 claims
- 3842US7276755B2Integrated circuit and method of manufactureADVANCED MICRO DEVICES INC·Filed 2005·Granted Oct 2, 2007·0 cites·9 claims
- 3942US6096662ANH3 /N2 plasma treatment to enhance the adhesion of silicon nitride to thermal oxideADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 1, 2000·9 cites·4 claims
- 4041US7465623B2Methods for fabricating a semiconductor device on an SOI substrateADVANCED MICRO DEVICES INC·Filed 2006·Granted Dec 16, 2008·0 cites·20 claims
- 4139US2005158963A1Method of forming planarized shallow trench isolationADVANCED MICRO DEVICES INC·Filed 2004·Application pending·0 cites
- 4238US6060404AIn-situ deposition of stop layer and dielectric layer during formation of local interconnectsADVANCED MICRO DEVICES INC·Filed 1997·Granted May 9, 2000·7 cites·19 claims
- 4334US6060393ADeposition control of stop layer and dielectric layer for use in the formation of local interconnectsADVANCED MICRO DEVICES INC·Filed 1997·Granted May 9, 2000·4 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →