Inventor · disambiguated record
Dax M. Crum
Also filed as: CRUM DAX · CRUM DAX M
23 granted patents·11 pending applications·42 citations·filing 2017–2025
92Inventor score
Files withINTEL CORP34
Top patents by PatentIndex Score
34 records- 0198US11855223B2Self-aligned gate endcap (SAGE) architectures with gate-all-around devicesINTEL CORP·Filed 2021·Granted Dec 26, 2023·6 cites·20 claims
- 0294US11233152B2Self-aligned gate endcap (SAGE) architectures with gate-all-around devicesINTEL CORP·Filed 2018·Granted Jan 25, 2022·6 cites·23 claims
- 0394US11018222B1Metallization in integrated circuit structuresINTEL CORP·Filed 2019·Granted May 25, 2021·16 cites·20 claims
- 0492US11527612B2Gate-all-around integrated circuit structures having vertically discrete source or drain structuresINTEL CORP·Filed 2018·Granted Dec 13, 2022·6 cites·13 claims
- 0590US12002810B2Gate-all-around integrated circuit structures having depopulated channel structures using bottom-up approachINTEL CORP·Filed 2018·Granted Jun 4, 2024·5 cites·13 claims
- 0688US12382706B2Self-aligned gate endcap (SAGE) architectures with gate-all-around devicesINTEL CORP·Filed 2024·Granted Aug 5, 2025·0 cites·23 claims
- 0788US2025126832A1Self-aligned gate endcap (sage) architectures with gate-all-around devicesINTEL CORP·Filed 2024·Application pending·0 cites
- 0886US12224350B2Self-aligned gate endcap (SAGE) architectures with gate-all-around devicesINTEL CORP·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 0979US12295170B2Fabrication of gate-all-around integrated circuit structures having additive metal gates and gate dielectrics with a dipole layerINTEL CORP·Filed 2020·Granted May 6, 2025·1 cites·9 claims
- 1078US11869891B2Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate processINTEL CORP·Filed 2018·Granted Jan 9, 2024·2 cites·6 claims
- 1177US2024429238A1Fabrication of gate-all-around integrated circuit structures having additive metal gatesINTEL CORP·Filed 2024·Application pending·0 cites
- 1276US12302632B2Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate processINTEL CORP·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 1376US2025227992A1Fabrication of gate-all-around integrated circuit structures having additive metal gatesINTEL CORP·Filed 2025·Application pending·0 cites
- 1474US12369393B2Gate-all-around integrated circuit structures having depopulated channel structures using bottom-up approachINTEL CORP·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 1573US12336278B2Gate-all-around integrated circuit structures having high mobilityINTEL CORP·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 1673US2024355903A1Self-aligned gate endcap (sage) architectures with gate-all-around devices above insulator substratesINTEL CORP·Filed 2024·Application pending·0 cites
- 1772US12484266B2Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layersINTEL CORP·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 1868US2023074199A1Gate-all-around integrated circuit structures having vertically discrete source or drain structuresINTEL CORP·Filed 2022·Application pending·0 cites
- 1965US12113068B2Fabrication of gate-all-around integrated circuit structures having additive metal gatesINTEL CORP·Filed 2020·Granted Oct 8, 2024·0 cites·22 claims
- 2064US11538806B2Gate-all-around integrated circuit structures having high mobilityINTEL CORP·Filed 2018·Granted Dec 27, 2022·0 cites·21 claims
- 2157US11469299B2Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layersINTEL CORP·Filed 2018·Granted Oct 11, 2022·0 cites·25 claims
- 2254US12057491B2Self-aligned gate endcap (SAGE) architectures with gate-all-around devices above insulator substratesINTEL CORP·Filed 2019·Granted Aug 6, 2024·0 cites·9 claims
- 2352US12051698B2Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layerINTEL CORP·Filed 2020·Granted Jul 30, 2024·0 cites·23 claims
- 2451US2024290788A1Metal gate fabrication for nanoribbon-based transistorsINTEL CORP·Filed 2023·Application pending·0 cites
- 2550US12426307B2Dual metal gate structures on nanoribbon semiconductor devicesINTEL CORP·Filed 2021·Granted Sep 23, 2025·0 cites·20 claims
- 2649US2024332394A1Fabrication of gate-all-around integrated circuit structures having multi-layer molybdenum metal gate stackINTEL CORP·Filed 2023·Application pending·0 cites
- 2748US11569370B2DEPOP using cyclic selective spacer etchINTEL CORP·Filed 2019·Granted Jan 31, 2023·0 cites·18 claims
- 2847US11515420B2Contacts to n-type transistors with X-valley layer over L-valley channelsINTEL CORP·Filed 2017·Granted Nov 29, 2022·0 cites·18 claims
- 2947US2023290778A1Fabrication of gate-all-around integrated circuit structures having dual metal gates and gate dielectrics with a single polarity dipole layerINTEL CORP·Filed 2022·Application pending·0 cites
- 3047US2022093596A1Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with a dipole layerINTEL CORP·Filed 2020·Application pending·0 cites
- 3146US12310060B2Gate-all-around integrated circuit structures having uniform threshold voltages and tight gate endcap tolerancesINTEL CORP·Filed 2021·Granted May 20, 2025·0 cites·20 claims
- 3245US11495672B2Increased transistor source/drain contact area using sacrificial source/drain layerINTEL CORP·Filed 2018·Granted Nov 8, 2022·0 cites·19 claims
- 3345US2021202478A1Gate-all-around integrated circuit structures having low aspect ratio isolation structures and subfinsINTEL CORP·Filed 2019·Application pending·0 cites
- 3445US2023420531A1Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with an opposite polarity dipole layerINTEL CORP·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →