Inventor · disambiguated record
Darwin Franseda Fan
Also filed as: FAN DARWIN · FAN DARWIN FRANSEDA
19 granted patents·8 pending applications·71 citations·filing 2011–2025
92Inventor score
Top patents by PatentIndex Score
27 records- 0195US9230986B23D memoryMICRON TECHNOLOGY INC·Filed 2015·Granted Jan 5, 2016·13 cites·20 claims
- 0295US8946807B23D memoryMICRON TECHNOLOGY INC·Filed 2013·Granted Feb 3, 2015·25 cites·32 claims
- 0394US10170639B23D memoryMICRON TECHNOLOGY INC·Filed 2016·Granted Jan 1, 2019·10 cites·21 claims
- 0493US9608000B2Devices and methods including an etch stop protection materialMICRON TECHNOLOGY INC·Filed 2015·Granted Mar 28, 2017·10 cites·6 claims
- 0591US11264395B1Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 1, 2022·2 cites·24 claims
- 0686US11862668B2Single-crystal transistors for memory devicesMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 2, 2024·1 cites·27 claims
- 0782US12224310B2Single-crystal transistors for memory devicesMICRON TECHNOLOGY INC·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 0879US12432928B2Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2023·Granted Sep 30, 2025·0 cites·22 claims
- 0976US10217755B2Flash memory cells, components, and methodsINTEL CORP·Filed 2017·Granted Feb 26, 2019·2 cites·23 claims
- 1076US8283236B2Methods of forming capacitorsGOODNER DUANE M·Filed 2011·Granted Oct 9, 2012·5 cites·24 claims
- 1175US10886130B2Methods of forming crystalline semiconductor material, and methods of forming transistorsMICRON TECHNOLOGY INC·Filed 2018·Granted Jan 5, 2021·2 cites·47 claims
- 1274US11871582B2Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 9, 2024·0 cites·14 claims
- 1371US10573721B2Devices and methods including an etch stop protection materialMICRON TECHNOLOGY INC·Filed 2017·Granted Feb 25, 2020·1 cites·14 claims
- 1470US2025142909A1Single-crystal transistors for memory devicesMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1564US11923272B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2022·Granted Mar 5, 2024·0 cites·14 claims
- 1662US11335626B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2020·Granted May 17, 2022·0 cites·29 claims
- 1761US2020266280A1Devices and methods including an etch stop protection materialMICRON TECHNOLOGY INC·Filed 2020·Application pending·0 cites
- 1858US2025359241A1Sculpted silicon for epitaxial digit line growth in vertical three-dimensional (3d) memoryMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1955US2024234482A9Microelectronic devices including capacitors, and related electronic systems and methodsMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 2053US2025301624A1Memory Circuitry And Methods Used In Forming Memory CircuitryMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2151US2018294272A1Methods of tunnel oxide layer formation in 3d nand memory structures and associated devicesINTEL CORP·Filed 2017·Application pending·0 cites
- 2248US9847340B2Methods of tunnel oxide layer formation in 3D NAND memory structures and associated devicesFAN DARWIN·Filed 2014·Granted Dec 19, 2017·0 cites·20 claims
- 2347US10923593B1Transistor and methods of forming transistorsMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 16, 2021·0 cites·31 claims
- 2447US10777561B2Semiconductor structure formationMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 15, 2020·0 cites·16 claims
- 2543US8766347B2CapacitorsGOODNER DUANE M·Filed 2012·Granted Jul 1, 2014·0 cites·7 claims
- 2641US2020066516A1Semiconductor Structures Which Include Laminates of First and Second Regions, and Methods of Forming Semiconductor StructuresMICRON TECHNOLOGY INC·Filed 2018·Application pending·0 cites
- 2736US2015206789A1Method of modifying polysilicon layer through nitrogen incorporation for isolation structureNANYA TECHNOLOGY CORP·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →