Inventor · disambiguated record
David Fong
Also filed as: FONG DAVID · FONG DAVID C
15 granted patents·2 pending applications·599 citations·filing 2002–2012
95Inventor score
Files withKILOPASS TECHNOLOGY INC7KILOPASS TECHNOLOGIES INC4KLP INTERNATIONAL LTD2PENG JACK Z2PENG JACK ZEZHONG1
Top patents by PatentIndex Score
17 records- 0196US7269047B1Memory transistor gate oxide stress release and improved reliabilityKILOPASS TECHNOLOGY INC·Filed 2006·Granted Sep 11, 2007·73 cites·9 claims
- 0295US6671040B2Programming methods and circuits for semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectricKILOPASS TECHNOLOGIES INC·Filed 2002·Granted Dec 30, 2003·112 cites·24 claims
- 0394US7471541B2Memory transistor gate oxide stress release and improved reliabilityKILOPASS TECHNOLOGY INC·Filed 2007·Granted Dec 30, 2008·34 cites·8 claims
- 0494US6777757B2High density semiconductor memory cell and memory array using a single transistorKILOPASS TECHNOLOGIES INC·Filed 2002·Granted Aug 17, 2004·101 cites·14 claims
- 0592US8259518B2Low voltage and low power memory cell based on nano current voltage divider controlled low voltage sense MOSFETPENG JACK Z·Filed 2010·Granted Sep 4, 2012·23 cites·4 claims
- 0690US6856540B2High density semiconductor memory cell and memory array using a single transistorKILOPASS TECHNOLOGIES INC·Filed 2003·Granted Feb 15, 2005·52 cites·11 claims
- 0788US7609539B2Electrically programmable fuse bitKILOPASS TECHNOLOGY INC·Filed 2007·Granted Oct 27, 2009·17 cites·8 claims
- 0888US6791891B1Method of testing the thin oxide of a semiconductor memory cell that uses breakdown voltageKILOPASS TECHNOLOGIES INC·Filed 2003·Granted Sep 14, 2004·51 cites·14 claims
- 0987US7064973B2Combination field programmable gate array allowing dynamic reprogrammabilityKLP INTERNATIONAL LTD·Filed 2004·Granted Jun 20, 2006·52 cites·18 claims
- 1086US7031209B2Methods and circuits for testing programmability of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectricKILOPASS TECHNOLOGY INC·Filed 2004·Granted Apr 18, 2006·35 cites·21 claims
- 1180US8797820B2Soft breakdown mode, low voltage, low power antifuse-based non-volatile memory cellPENG JACK Z·Filed 2012·Granted Aug 5, 2014·8 cites·4 claims
- 1278US7907465B2Electrically programmable fuse bitKILOPASS TECHNOLOGY INC·Filed 2009·Granted Mar 15, 2011·8 cites·11 claims
- 1374US7277348B2Memory cell comprising an OTP nonvolatile memory unit and a SRAM unitKLP INTERNATIONAL LTD·Filed 2006·Granted Oct 2, 2007·10 cites·24 claims
- 1472US7042772B2Methods and circuits for programming of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectricKILOPASS TECHNOLOGY INC·Filed 2004·Granted May 9, 2006·20 cites·10 claims
- 1567US8789267B2Chip packaging fixture using magnetic field for self-alignmentPENG JACK ZEZHONG·Filed 2010·Granted Jul 29, 2014·3 cites·28 claims
- 1641US2011216572A1Electrically programmable fuse bitKILOPASS TECHNOLOGY INC·Filed 2011·Application pending·0 cites
- 1732US2005275427A1Field programmable gate array logic unit and its clusterWANG MAN·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →